摘要:
A first protection film (3) and a second protection film (4) are formed on an electrode pad (2). Bumps (5) are formed at sites where the deposited first and second protection films (3), (4) are both removed. The openings (3a) where the lower, first protection film (3) is removed are larger than the openings (4a) where the upper, second protection film (4) is removed, so that the upper, second protection film (4) has an overhanging structure. The bottom periphery of the bump (5) is formed to extend under the second protection film (4).
摘要:
A semiconductor device is disclosed which includes a semiconductor chip having a plurality of electrode pads on its upper surface; terminals such as copper posts formed on the upper surface of the semiconductor chip, and electrically connected to each of the electrode pads; a resin deposited on the upper surface of the semiconductor chip, encapsulating the terminals but exposing at least some of them to a predetermined height; and electroconductor members such as solder balls connected to the terminals. There is also disclosed a method of fabricating such a semiconductor device.
摘要:
Interconnection elements for electronic components, exhibiting desirable mechanical characteristic (such as resiliency, for making pressure contacts) are formed by using a shaping tool (512) to shape an elongate core element (502) of a soft material (such as gold or soft copper wire) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped core element with a hard material (such as nickel and its alloys), to impart to desired spring (resilient) characteristic to the resulting composite interconnection element. A final overcoat of a material having superior electrical qualities (e.g., electrical conductivity and/or solderability) may be applied to the composite interconnection element. The resulting interconnection elements may be mounted to a variety of electronic components, including directly to semiconductor dies and wafers (in which case the overcoat material anchors the composite interconnection element to a terminal (or the like) on the electronic component), may be mounted to support substrates for use as interposers and may be mounted to substrates for use as probe cards or probe card inserts. The shaping tool may be an anvil (622) and a die (624), and may nick or sever successive shaped portions of the elongate elements, and the elongate element may be of an inherently hard (springy) material. Methods of fabricating interconnection elements on sacrificial substrates are described. Methods of fabricating tip structures (258) and contact tips at the end of interconnection elements are also described.
摘要:
A semiconductor device allows for mounting by means of low load in a flip-chip mounting method, enables prevention of damage, enables an increase in the reliability of electrical connections in a high-temperature environment, and further, enables the efficient fabrication of miniaturized external connection electrodes. In semiconductor device 1, miniaturized external connection electrodes 12 are formed by lamination on electrodes of semiconductor chip 11, and these external connection electrodes electrically connect by means of contact with substrate wiring 21 while maintaining an elastically deformed state. The semiconductor device may further include elastic layer 13, bumps 14, and protective film 15.
摘要:
A process is provided for manufacturing a layer arrangement (1) having a bump for a flip chip or similar connection. The layer arrangement has a plurality of layers (2, 3, 4, 5, 6, 7, 11) made of solid material and stacked into a layer stack (8). A recess (10) that extends over several layers (2, 3, 4, 5, 6, 7, 11) is made in the layer stack (8) transverse to the coating planes of the layers (2, 3, 4, 5, 6, 7, 11). A bump material (14) is placed in the recess (10). A profiling is created on the lateral boundary wall of the recess (10) by removal of layer material of different layers (2, 3, 4, 5, 6, 7, 11) of the layer stack (8). The profiling, starting from the surface (9) of the layer stack (8) and progressing in layers to the inside of the recess (10), has at least two indentations (12) and at least one projection (13) located between them. After the production of the profiling, a bump material (14) is brought into the recess (10) in such a way that it grasps behind the indentations (12).
摘要:
A face-down-bonded semiconductor device having: a semiconductor substrate having a semiconductor electric/electronic circuit formed on the surface of the semiconductor substrate, the circuit having contact terminals; wiring pillars made of conductive material and disposed on the contact terminals on the surface of the semiconductor substrate; and support pillars disposed at positions different from the contact terminals on the surface of the semiconductor substrate, the support pillars each having a top surface generally at the same height as the height of each of the wiring pillars. The face-down-bonded semiconductor device can provide a sufficient support force and prevent degradation of the electrical characteristics.
摘要:
In a contacting system for bipolar electronic circuit elements, more particularly semiconductor circuit elements, in which a circuit element body provided on at least one of two major surfaces located opposite each other with a thick, pressure-contact layer is held under pressure between two contact bodies interconnected by a housing, more particularly a soft glass housing. The risk of contact interruptions with frequent temperature variations in a range of from 0.degree. to 300.degree. C. is eliminated in that the thick pressure contact layers are subdivided into several contact blocks, preferably three or four, which are mutually separated and arranged beside each other.The surface of the contact blocks facing the contact bodies may be coated with a connection layer, which serves to establish during sealing into a soft glass envelope a connection by soldering or diffusion welding between the contact blocks and the contact bodies.
摘要:
A semiconductor package comprises an integrated circuit having a contact and a conductive bump directly attached to the contact. The conductive bump has a sidewall with a roughened surface. A leadframe is electrically coupled to the conductive bump. An integrated circuit package mold covers portions of the conductive bump and the lead frame, the roughened surface of the conductive bump is configured to interlock with the integrated circuit package mold. An electrically conductive adhesive couples the conductive bump to the lead frame. The conductive bump comprises copper in one arrangement. The roughened surface of the conductive bump includes grooves along grain boundaries that separate copper grains. The roughened surface of the conductive bump is formed by etching with a diluted sulfuric peroxide solution.
摘要:
An electronic device package and manufacturing method thereof are provided. The electronic device package includes an electronic component including an active surface, a patterned conductive layer disposed on the active surface, an encapsulation layer disposed over the patterned conductive layer, and a buffer layer disposed between the patterned conductive layer and the encapsulation layer. The buffer layer is shaped and sized to alleviate a stress generated due to an interaction between the patterned conductive layer and the encapsulation layer.
摘要:
An electronic device package and manufacturing method thereof are provided. The electronic device package includes an electronic component including an active surface, a patterned conductive layer disposed on the active surface, an encapsulation layer disposed over the patterned conductive layer, and a buffer layer disposed between the patterned conductive layer and the encapsulation layer. The buffer layer is shaped and sized to alleviate a stress generated due to an interaction between the patterned conductive layer and the encapsulation layer.