Air-spaced encapsulated dielectric nanopillars for flat optical devices

    公开(公告)号:US12216243B2

    公开(公告)日:2025-02-04

    申请号:US16905703

    申请日:2020-06-18

    Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.

    Polarizer-free LED displays
    82.
    发明授权

    公开(公告)号:US11968856B2

    公开(公告)日:2024-04-23

    申请号:US17493508

    申请日:2021-10-04

    CPC classification number: H10K50/858 H10K50/865 H10K71/00

    Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

    IN-LINE MONITORING OF OLED LAYER THICKNESS AND DOPANT CONCENTRATION

    公开(公告)号:US20230320183A1

    公开(公告)日:2023-10-05

    申请号:US18207549

    申请日:2023-06-08

    CPC classification number: H10K71/00 B05D1/60

    Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

    ENCAPSULATION HAVING POLYMER AND DIELECTRIC LAYERS FOR ELECTRONIC DISPLAYS

    公开(公告)号:US20220293888A1

    公开(公告)日:2022-09-15

    申请号:US17751454

    申请日:2022-05-23

    Abstract: A display device includes a display layer having a plurality of organic light-emitting diodes (OLEDs) separated by gaps, and an encapsulation layer covering a light-emitting side of the display layer. The encapsulation layer includes a bilayer having a plurality of polymer projections on the display layer, the plurality of polymer projections having spaces therebetween, and a first dielectric layer conformally covering the plurality of polymer projections and an underlying surface in the spaces between the polymer projections, the dielectric layer forming side walls along sides of the polymer projections. The side walls are aligned with the gaps between the OLEDS, and/or the encapsulation layer has multiple bilayers.

    DEPOSITION OF SILICON-BASED DIELECTRIC FILMS

    公开(公告)号:US20220270870A1

    公开(公告)日:2022-08-25

    申请号:US17667700

    申请日:2022-02-09

    Abstract: A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.

    Methods of forming stretchable encapsulation for electronic displays

    公开(公告)号:US11258045B2

    公开(公告)日:2022-02-22

    申请号:US16698835

    申请日:2019-11-27

    Abstract: A method of encapsulating an organic light-emitting diode display includes depositing a plurality of first polymer projections onto a light-emitting side of a display layer having a plurality of organic light-emitting diodes (OLEDs) such that the plurality of first polymer projections have spaces therebetween that expose an underlying surface, and conformally coating the first polymer projections and the spaces between the first polymer projections with a first dielectric layer such that the first dielectric layer has side walls along sides of the first polymer projections and defines wells in spaces between the side walls.

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