公开(公告)号：US11361991B2

公开(公告)日：2022-06-14

申请号：US16975794

申请日：2019-03-07

Applicant: Applied Materials, Inc.

Inventor： Xin Liu ,  Fei Wang ,  Rui Cheng ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/768 ,  C23C16/01 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/06

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.

公开(公告)号：US11848232B2

公开(公告)日：2023-12-19

申请号：US17839170

申请日：2022-06-13

Applicant: Applied Materials, Inc.

Inventor： Xin Liu ,  Fei Wang ,  Rui Cheng ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/768 ,  C23C16/01 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/06

CPC classification number: H01L21/76837 ,  C23C16/01 ,  C23C16/24 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/32055 ,  H01L29/0649

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.