公开(公告)号：US11869960B2

公开(公告)日：2024-01-09

申请号：US17210498

申请日：2021-03-24

申请人： FUJI ELECTRIC CO., LTD.

发明人： Soichi Yoshida

IPC分类号： H01L29/739 ,  H01L29/861

CPC分类号： H01L29/7397 ,  H01L29/861

摘要： Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.

公开(公告)号：US11869959B2

公开(公告)日：2024-01-09

申请号：US17412556

申请日：2021-08-26

申请人： STMicroelectronics (Tours) SAS

发明人： Frederic Gautier

IPC分类号： H02M3/335 ,  H01L29/739 ,  H01L27/07 ,  H01L29/872 ,  H03K17/74

CPC分类号： H01L29/7392 ,  H01L27/0727 ,  H01L29/8725 ,  H02M3/33592 ,  H03K17/74

摘要： A device includes a controllable current source connected between a first node and a first terminal coupled to a cathode of a controllable diode. A capacitor is connected between the first node and a second terminal coupled to an anode of the controllable diode. A first switch is connected between the first node and a third terminal coupled to a gate of the controllable diode. A second switch is connected between the second and third terminals. A first diode is connected between the third terminal and the second terminal, an anode of the first diode being preferably coupled to the third terminal.

公开(公告)号：US20240006519A1

公开(公告)日：2024-01-04

申请号：US18469541

申请日：2023-09-18

申请人： FUJI ELECTRIC CO., LTD.

发明人： Yosuke SAKURAI ,  Seiji NOGUCHI ,  Daisuke OZAKI ,  Ryutaro HAMASAKI ,  Takuya YAMADA ,  Yoshihiro IKURA

IPC分类号： H01L29/739 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/7397 ,  H01L29/66734 ,  H01L29/1095

摘要： Provided is a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; a base region of a second conductivity type provided between the drift region and the upper surface of the semiconductor substrate; a plurality of trench portions provided from the upper surface of the semiconductor substrate to below the base region; a lower end region of the second conductivity type provided in contact with lower ends of two or more trench portions; a well region of the second conductivity type which is provided from the upper surface of the semiconductor substrate to below the base region, and has a higher doping concentration than the base region; and a high resistance region of the second conductivity type which is arranged between the lower end region and the well region in the top view and has a lower doping concentration than the lower end region.

公开(公告)号：US20240006518A1

公开(公告)日：2024-01-04

申请号：US18466821

申请日：2023-09-14

申请人： ROHM CO., LTD.

发明人： Kohei MURASAKI

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66348

摘要： This semiconductor device includes: an n-type drift layer; a p-type base region; a trench extending in the depth direction so as to pass through the base region and reach the drift layer; an insulating film formed on an inner surface of the trench; a gate trench surrounding the insulating film; and a p-type column region provided on the drift layer at a position at the bottom of the trench. The drift layer includes: a first region having a first concentration peak; and a second region that is provided at a position deeper than the trench and corresponding to the column region, and has a second concentration peak lower than the first concentration peak.

公开(公告)号：US20230420549A1

公开(公告)日：2023-12-28

申请号：US18138956

申请日：2023-04-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hong-fei LU

IPC分类号： H01L29/739 ,  H01L29/423 ,  H01L29/36 ,  H01L29/08

CPC分类号： H01L29/7397 ,  H01L29/4236 ,  H01L29/36 ,  H01L29/0804

摘要： IGBT includes an n-type drift layer, an n-type accumulation layer provided on the upper surface of the drift layer having higher impurity concentration than the drift layer, a base layer provided on the upper surface of the accumulation layer, a gate electrode embedded inside a striped gate trench penetrating the base layer and the storage layer through a gate insulating film, and a dummy electrode embedded inside a dummy trench provided to face the gate trench across the base layer and the accumulation layer through a dummy insulating film. The base layer has a p-type active base region and a p-type floating base region arranged alternately in the extending direction of the gate trench, and an n-type base isolation region isolating the active base region and the floating base region.

公开(公告)号：US11855184B2

公开(公告)日：2023-12-26

申请号：US17337596

申请日：2021-06-03

申请人： Magnachip Semiconductor, Ltd.

发明人： Soo Chang Kang ,  Seong Jo Hong

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L21/768 ,  H01L29/417 ,  H01L27/02 ,  H01L21/266 ,  H01L29/739 ,  H01L29/866

CPC分类号： H01L29/66734 ,  H01L21/76897 ,  H01L27/0255 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/7808 ,  H01L29/7813 ,  H01L21/266 ,  H01L29/7397 ,  H01L29/866

摘要： A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.

公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC分类号： H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

摘要： A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.

公开(公告)号：US11848354B2

公开(公告)日：2023-12-19

申请号：US17401827

申请日：2021-08-13

申请人： Infineon Technologies AG

发明人： Roman Baburske ,  Philip Christoph Brandt ,  Johannes Georg Laven

IPC分类号： H01L29/06 ,  H01L27/07 ,  H01L29/66 ,  H01L21/22 ,  H01L27/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L29/16 ,  H01L29/423 ,  H01L29/10

CPC分类号： H01L29/0638 ,  H01L21/221 ,  H01L27/0664 ,  H01L27/0727 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4238

摘要： A power semiconductor device includes a semiconductor body coupled to first and second load terminals. The body includes: at least a diode structure configured to conduct a load current between the terminals and including an anode port electrically connected to the first load terminal and a cathode port electrically connected to the second load terminal; and drift and field stop regions of the same conductivity type. The cathode port includes first port sections and second port sections with dopants of the opposite conductivity type. A transition between each of the second port sections and the field stop region forms a respective pn-junction that extends along a first lateral direction. A lateral separation distance between immediately adjacent ones of second port sections in a second group is smaller than in a first group.

公开(公告)号：US20230402533A1

公开(公告)日：2023-12-14

申请号：US18306250

申请日：2023-04-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Tomonori MIZUSHIMA ,  Tatsuya NAITO

IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/10

CPC分类号： H01L29/7397 ,  H01L29/8613 ,  H01L29/1095

摘要： There is provided a semiconductor device in which the transistor portion has a first transistor region provided with the emitter region, the contact region, and the first base region; a second transistor region which is provided with the emitter region and the contact region and which is provided between the first transistor region and the diode portion; and a boundary region which includes the second base region and which is provided between the second transistor region and the diode portion, and at a front surface of the semiconductor substrate, an area of the contact region in the second transistor region is smaller than an area of the contact region in the first transistor region.

公开(公告)号：US20230402511A1

公开(公告)日：2023-12-14

申请号：US18455643

申请日：2023-08-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Motoyoshi KUBOUCHI ,  Takashi YOSHIMURA ,  Yuki SAWA ,  Shogo YAMAGUCHI

IPC分类号： H01L29/32 ,  H01L29/739 ,  H01L29/06 ,  H01L21/265 ,  H01L21/322 ,  H01L29/861 ,  H01L29/66

CPC分类号： H01L29/32 ,  H01L29/7395 ,  H01L29/0603 ,  H01L21/265 ,  H01L21/322 ,  H01L29/8613 ,  H01L29/66333

摘要： Provided is a semiconductor device including a drift region, a buffer region which is provided in a back surface side of a semiconductor substrate relative to the drift region and has a first peak of a doping concentration, and a first lattice defect region which is provided in a front surface side of the semiconductor substrate relative to the first peak in a depth direction of the semiconductor substrate, in which the buffer region has a hydrogen peak which is provided in the front surface side of the semiconductor substrate relative to the first lattice defect region, and an integrated concentration obtained by integrating the doping concentration in a direction from an upper end of the drift region to the hydrogen peak in the depth direction of the semiconductor substrate is equal to or larger than a critical integrated concentration.