公开(公告)号：US20240304709A1

公开(公告)日：2024-09-12

申请号：US18583993

申请日：2024-02-22

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Frank Pfirsch ,  Franz Josef Niedernostheide

IPC: H01L29/739 ,  H01L27/02 ,  H01L29/06 ,  H01L29/43 ,  H01L29/66

CPC classification number: H01L29/7397 ,  H01L27/0207 ,  H01L29/0603 ,  H01L29/435 ,  H01L29/66333

Abstract: A semiconductor device includes a semiconductor body having a trench transistor cell array. The trench transistor cell array includes a first trench transistor cell unit and a second trench transistor cell unit. Transistor cells based on the first trench transistor cell unit and transistor cells based on the second trench transistor cell unit are electrically connected in parallel. The first trench transistor cell unit has a first threshold voltage. The second trench transistor cell unit has a second threshold voltage larger than the first threshold voltage. An absolute value of dU/dt at turning on a nominal current of the transistor cell array is at least 50% of an absolute value of dU/dt at turning on 10% of the nominal current of the transistor cell array, dU/dt being the temporal derivate of a voltage U between load terminals of the trench transistor cell array.

公开(公告)号：US20230307531A1

公开(公告)日：2023-09-28

申请号：US18122918

申请日：2023-03-17

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Frank Pfirsch ,  Jana Hänsel ,  Katja Waschneck

IPC: H01L29/739 ,  H01L29/10 ,  H03K17/567

CPC classification number: H01L29/7397 ,  H01L29/1095 ,  H03K17/567

Abstract: A power semiconductor device includes: a semiconductor body coupled to first and second load terminals; an active region with first and second sections, both configured to conduct a load current between the load terminals; electrically isolated from the load terminals, first control electrodes in the first section and second control electrodes in both the first and second sections); and semiconductor channel structures in the semiconductor body extending in both the first and second sections. Each channel structure is associated to at least one of the first and second control electrodes. The respective control electrode is configured to induce an inversion channel for load current conduction in the associated semiconductor channel structure. The first section exhibits a first effective total inversion channel width per unit area ratio, W/A1, and the second section exhibits a second effective inversion channel width per unit area ratio, W/A2, where W/A1>W/A2.

公开(公告)号：US11728417B2

公开(公告)日：2023-08-15

申请号：US17402516

申请日：2021-08-14

Applicant: Infineon Technologies AG

Inventor： Roman Baburske

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/7397 ,  H01L29/0696 ,  H01L29/1095

Abstract: A semiconductor device includes a drift region of a first conductivity type in a semiconductor body having a first main surface, and a body region of a second conductivity type between the drift region and the first main surface. Trenches extend into the semiconductor body from the first main surface and pattern the semiconductor body into mesas including a first mesa between first and second trenches, and a second mesa between second and third trenches. An electrode in the first trench is one electrode out of an electrode group of an electrode electrically coupled to a first gate driver output, an electrode electrically coupled to a second gate driver output, and an electrode electrically connected to a first load contact. An electrode in the second trench is another electrode out the electrode group, and an electrode in the third trench is a remaining electrode out of the electrode group.

公开(公告)号：US20220375811A1

公开(公告)日：2022-11-24

申请号：US17741527

申请日：2022-05-11

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Moritz Hauf ,  Hans-Joachim Schulze ,  Holger Schulze ,  Benedikt Stoib

IPC: H01L23/367 ,  H01L27/07 ,  H01L29/861 ,  H01L29/78

Abstract: A power semiconductor device includes, an active area that conducts load current between first and second load terminal structures, a drift region, and a backside region that includes, inside the active area, first and second backside emitter zones one or both of which includes: first sectors having at least one first region of a second conductivity type contacting the second load terminal structure and a smallest lateral extension of at most 50 μm; and/or second sectors having a second region of the second conductivity type contacting the second load terminal structure and a smallest lateral extension of at least 50 μm. The emitter zones differ by at least of: the presence of first and/or second sectors; smallest lateral extension of first and/or second sectors; lateral distance between neighboring first and/or second sectors; smallest lateral extension of the first regions; lateral distance between neighboring first regions within the same first sector.

公开(公告)号：US20220093585A1

公开(公告)日：2022-03-24

申请号：US17482571

申请日：2021-09-23

Applicant: Infineon Technologies AG

Inventor： Roman Baburske

IPC: H01L27/06 ,  H01J37/24 ,  H01L29/06 ,  H01L29/739 ,  H01L29/66

Abstract: An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.

公开(公告)号：US10886909B2

公开(公告)日：2021-01-05

申请号：US15620861

申请日：2017-06-13

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Johannes Georg Laven ,  Thomas Basler

IPC: H03K17/00 ,  H03K17/082 ,  H03K17/28 ,  H01L27/088 ,  H01L21/82 ,  H01L29/08 ,  H01L27/06 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L21/8234 ,  H01L29/04

Abstract: An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.

公开(公告)号：US20200243509A1

公开(公告)日：2020-07-30

申请号：US16844674

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler ,  Philip Christoph Brandt ,  Maria Cotorogea

IPC: H01L27/02 ,  H01L29/10 ,  H03K17/082 ,  H01L29/861 ,  H01L29/40 ,  H01L29/739 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06

Abstract: A semiconductor device is operable a forward current mode and a reverse current mode and comprises a semiconductor region, and a controllable charge carrier injector, and a gate. A method includes detecting, in the reverse current mode, if the present load current in the reversed direction does not exceed a threshold value, providing a gate signal such that the gate electrode causes the charge carrier injector to induce a first charge carrier density within the semiconductor region so as to conduct a nominal load current in the reverse direction; if the present load current in the reverse direction does exceed the threshold value, operating the semiconductor device in an overload state by providing the gate signal with a voltage that causes the semiconductor region to conduct an overload current in the reverse direction, wherein the second charge carrier density is higher than the first charge carrier density.

公开(公告)号：US10475910B2

公开(公告)日：2019-11-12

申请号：US14834542

申请日：2015-08-25

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Roman Baburske

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/66 ,  H01L29/08 ,  H01L29/40 ,  H01L29/10

Abstract: A semiconductor device includes an insulated gate bipolar transistor (IGBT) arrangement having a first configuration region of emitter-side insulated gate bipolar transistor structures, a second configuration region of emitter-side insulated gate bipolar transistor structures, a collector layer and a drift layer. The drift layer is arranged between the collector layer and the emitter-side insulated gate bipolar transistor structures of the first configuration region and the second configuration region. The collector layer includes at least a first doping region laterally adjacent to a second doping region, the doping regions having different charge carrier life times, different conductivity types or different doping concentrations. The first configuration region is located with at least a partial lateral overlap to the first doping region, and the second configuration region is located with at least a partial lateral overlap to the second doping region.

公开(公告)号：US10381467B2

公开(公告)日：2019-08-13

申请号：US15858217

申请日：2017-12-29

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Matteo Dainese ,  Peter Lechner ,  Hans-Joachim Schulze ,  Johannes Georg Laven

IPC: H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423 ,  H01L29/739 ,  H01L29/861

Abstract: According to an embodiment of a semiconductor device, the device includes first and second trenches formed in a semiconductor body and an electrode disposed in each of the trenches. One of the electrodes is a gate electrode, and the other electrode is electrically disconnected from the gate electrode. The semiconductor device further includes a semiconductor mesa between the trenches. The semiconductor mesa includes a separation region and at least one of a source region and a body region located in the semiconductor mesa. A drift zone is provided below the at least one of the source region and the body region. In the separation region, at least one of (i) a capacitive coupling between the gate electrode and the semiconductor mesa and (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.

公开(公告)号：US10332973B2

公开(公告)日：2019-06-25

申请号：US15986301

申请日：2018-05-22

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Markus Bina ,  Hans-Joachim Schulze ,  Oana Julia Spulber

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36 ,  H01L29/08

Abstract: A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. The semiconductor body further comprises: a barrier region and a drift volume having at least a first drift region wherein the barrier region couples the first drift region with the semiconductor channel region.