公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC分类号： H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

摘要： A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.