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公开(公告)号：US20220254877A1
公开(公告)日：2022-08-11
申请号：US17591016
申请日：2022-02-02
发明人： Wentao YANG , Loucheng DAI , Chaofan SONG , Huiling ZUO , Jiang DU , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/06 , H01L29/739
摘要： A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.
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公开(公告)号：US20220254907A1
公开(公告)日：2022-08-11
申请号：US17669080
申请日：2022-02-10
发明人： Loucheng DAI , Wentao YANG , Huiling ZUO , Kang WANG , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/739 , H01L23/48 , H01L27/102
摘要： An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.
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公开(公告)号：US20220199795A1
公开(公告)日：2022-06-23
申请号：US17695539
申请日：2022-03-15
发明人： Boning HUANG , Zhaozheng HOU , Qimeng JIANG
IPC分类号： H01L29/423 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778 , H03K17/284
摘要： This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride GaN buffer layer formed on the substrate; an aluminum gallium nitride AlGaN barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride P-GaN cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P-GaN cap layer. A Schottky contact is formed between the first gate metal and the P-GaN cap layer, and an ohmic contact is formed between the second gate metal and the P-GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit. In addition, the gallium nitride component has a hybrid gate structure that includes a Schottky gate and an ohmic gate, so that not only gate leakage currents in a conduction process can be reduced to reduce driving power consumption, but also a large quantity of electron holes can be injected into the AlGaN barrier layer during conduction to optimize a dynamic resistance, thereby improving component reliability.
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公开(公告)号：US20220416063A1
公开(公告)日：2022-12-29
申请号：US17851179
申请日：2022-06-28
发明人： Wentao YANG , Loucheng DAI , Chaofan SONG , Boning HUANG , Zhihua LIU
IPC分类号： H01L29/739 , H01L29/06 , H01L29/66
摘要： Embodiments of this application disclose a semiconductor device, a related chip, and a preparation method. The semiconductor device includes an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer. A density of free electrons at the N-type field stop layer is higher than a density of free electrons at the N-type drift layer. The N-type field stop layer includes first type impurity particles and second type impurity particles doped with the first type impurity particles, and a radius of the second type impurity particles is greater than a radius of the first type impurity particles. In the N-type field stop layer, an injection density of the first type impurity particles in a region adjacent to the N-type drift layer is higher than an injection density of the first type impurity particles in any other region.
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5.发明申请RESONANT BIDIRECTIONAL CONVERTER, UNINTERRUPTIBLE POWER SUPPLY APPARATUS, AND CONTROL METHOD 审中-公开谐波双向转换器，不间断电源设备和控制方法公开(公告)号：US20150180350A1
公开(公告)日：2015-06-25
申请号：US14575917
申请日：2014-12-18
发明人： Boning HUANG , Yongtao LIANG , Wenbin CHEN , Denghai PAN
CPC分类号： H02M3/33507 , H02J7/0068 , H02J9/06 , H02M3/33584 , H02M3/33592 , H02M3/3382 , H02M2001/0058 , H02M2007/4815 , Y02B70/1433 , Y02B70/1441 , Y02B70/1475 , Y02B70/1491 , Y10T307/625
摘要： The present invention provides a resonant bidirectional converter, an uninterruptible power supply apparatus, and a control method. The resonant bidirectional converter includes: a filter capacitor, three primary side bridge arms, a resonant cavity, three transformers, and three secondary side bridge arms, where two ends of each of the primary side bridge arms are separately connected to two ends of a bus capacitor, each of the primary side bridge arms includes two semiconductor switch that are serially connected in a same direction, and any connection point located between the two semiconductor switch of the primary side bridge arm that are serially connected in the same direction is a first connection point.
摘要翻译： 本发明提供一种谐振双向转换器，不间断电源装置和控制方法。 谐振双向转换器包括：滤波电容器，三个一次侧桥臂，谐振腔，三个变压器和三个次级侧桥臂，其中每个初级侧桥臂的两端分别连接到总线的两端 电容器，每个初级侧桥臂包括沿相同方向串联连接的两个半导体开关，并且位于初级侧桥臂的两个半导体开关之间的任一连接点是沿相同方向串联连接的第一连接 点。
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公开(公告)号：US20230411445A1
公开(公告)日：2023-12-21
申请号：US18459563
申请日：2023-09-01
发明人： Wentao YANG , Kang WANG , Chaofan SONG , Lianghao WANG , Qian ZHAO , Loucheng DAI , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/06 , H01L29/739 , H01L29/66
CPC分类号： H01L29/0615 , H01L29/7397 , H01L29/66348
摘要： A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.
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公开(公告)号：US20230198512A1
公开(公告)日：2023-06-22
申请号：US18170575
申请日：2023-02-17
发明人： Fayou YIN , Boning HUANG , Wentao YANG , Quan ZHANG , Qian ZHAO
IPC分类号： H03K17/0412 , H03K17/16
CPC分类号： H03K17/04123 , H03K17/162
摘要： A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.
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8.发明公开公开(公告)号：US20230187523A1
公开(公告)日：2023-06-15
申请号：US18166391
申请日：2023-02-08
发明人： Ruihong LUO , Boning HUANG , Hui SUN , Qimeng JIANG , Qilong BAO , Zhibin CHEN
IPC分类号： H01L29/47 , H01L23/31 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/40 , H01L29/66
CPC分类号： H01L29/475 , H01L23/3171 , H01L29/205 , H01L29/401 , H01L29/2003 , H01L29/7786 , H01L29/66462
摘要： This application provides a hybrid gate field effect transistor, a method for preparing the hybrid gate field effect transistor, and a switch circuit. The hybrid gate field effect transistor includes a channel layer, and a source, a drain, and a gate structure disposed on the channel layer. The gate structure is a hybrid gate structure prepared from two materials. The gate structure includes a first structural layer and a second structural layer. The second structural layer wraps the first structural layer. The first structural layer is an N-type gallium nitride layer or an intrinsic gallium nitride layer; and the second structural layer is a P-type gallium nitride layer. The gate metal layer is disposed on one side of the gate structure facing away from the channel layer, and the gate metal layer is in ohmic contact with the first structural layer.
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公开(公告)号：US20230018508A1
公开(公告)日：2023-01-19
申请号：US17946111
申请日：2022-09-16
发明人： Boning HUANG , Quan ZHANG , Wentao YANG
IPC分类号： H01L29/739 , H01L29/417 , H01L29/423 , H01L29/10
摘要： This application provides an insulated gate bipolar transistor, a motor control unit, and a vehicle. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer (10) and an RC-IGBT device structure feature layer (30) are respectively arranged on two sides of an SJ device structure feature layer (20). The RC-IGBT device structure feature layer (30) includes a collector (12) and a drain (13) that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode (15) laminated with and electrically connected to the collector (12), and a second metal electrode (14) laminated with and electrically connected to the drain (13), and the first metal electrode (15) is electrically isolated from the second metal electrode (14).
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10.发明申请公开(公告)号：US20230009774A1
公开(公告)日：2023-01-12
申请号：US17857468
申请日：2022-07-05
发明人： Bo GAO , Boning HUANG , Yuxi WAN
摘要： Embodiments of this application relate to the field of semiconductor technologies, and provide composite substrate that comprises: a first silicon carbide layer comprising monocrystalline silicon carbide, and a second silicon carbide layer bonded to the first silicon carbide layer, wherein defect density of at least a part of the second silicon carbide layer is greater than defect density of the first silicon carbide layer.
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