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公开(公告)号：US20220417648A1
公开(公告)日：2022-12-29
申请号：US17778556
申请日：2020-11-11
发明人： Wentao YANG , Qiong RUAN , Shitao CHEN , Yanbiao LUO , Jie LIU
摘要： Embodiments of this application provide a speaker module and a portable electronic device. The speaker module includes a first speaker module and a second speaker module. The first speaker module includes a first housing and a first speaker monomer accommodated in the first housing, and the first speaker monomer has a first diaphragm. The second speaker module includes a second housing and a second speaker monomer accommodated in the second housing, and the second speaker monomer has a second diaphragm. The first speaker module and the second speaker module are sequentially disposed in a vertical direction, and a vibration direction of the first diaphragm is opposite to a vibration direction of the second diaphragm, so that momentum variations (mv) Δ of the speaker module are offset against each other, thereby resolving a problem that a vibration feeling is strong when the speaker module works.
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公开(公告)号：US20230411445A1
公开(公告)日：2023-12-21
申请号：US18459563
申请日：2023-09-01
发明人： Wentao YANG , Kang WANG , Chaofan SONG , Lianghao WANG , Qian ZHAO , Loucheng DAI , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/06 , H01L29/739 , H01L29/66
CPC分类号： H01L29/0615 , H01L29/7397 , H01L29/66348
摘要： A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.
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公开(公告)号：US20230198512A1
公开(公告)日：2023-06-22
申请号：US18170575
申请日：2023-02-17
发明人： Fayou YIN , Boning HUANG , Wentao YANG , Quan ZHANG , Qian ZHAO
IPC分类号： H03K17/0412 , H03K17/16
CPC分类号： H03K17/04123 , H03K17/162
摘要： A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.
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公开(公告)号：US20230018508A1
公开(公告)日：2023-01-19
申请号：US17946111
申请日：2022-09-16
发明人： Boning HUANG , Quan ZHANG , Wentao YANG
IPC分类号： H01L29/739 , H01L29/417 , H01L29/423 , H01L29/10
摘要： This application provides an insulated gate bipolar transistor, a motor control unit, and a vehicle. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer (10) and an RC-IGBT device structure feature layer (30) are respectively arranged on two sides of an SJ device structure feature layer (20). The RC-IGBT device structure feature layer (30) includes a collector (12) and a drain (13) that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode (15) laminated with and electrically connected to the collector (12), and a second metal electrode (14) laminated with and electrically connected to the drain (13), and the first metal electrode (15) is electrically isolated from the second metal electrode (14).
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公开(公告)号：US20220254907A1
公开(公告)日：2022-08-11
申请号：US17669080
申请日：2022-02-10
发明人： Loucheng DAI , Wentao YANG , Huiling ZUO , Kang WANG , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/739 , H01L23/48 , H01L27/102
摘要： An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.
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公开(公告)号：US20180121156A1
公开(公告)日：2018-05-03
申请号：US15561819
申请日：2016-03-21
发明人： Haitao ZHEN , Wentao YANG , Yongxiang YANG
CPC分类号： G06F3/165 , G10L19/00 , H04R1/1041 , H04R3/12 , H04R5/033 , H04R29/001 , H04R2420/03 , H04R2460/15
摘要： A method used by a terminal to detect an earphone status and a terminal are disclosed. The method includes: disabling, by a processor, a path for outputting an audio signal to a second earphone; detecting electrical signals of a first audio output end and a third audio output end of a first earphone; and determining a frequency value of a low-frequency resonant point of the first earphone according to the electrical signals of the first audio output end and the third audio output end, and determining, according to the frequency value of the low-frequency resonant point, whether the first earphone is in an in-position state. In this way, only the electrical signals of the first audio output end and the third audio output end need to be detected, and it may be determined, according to changes of the electrical signals.
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公开(公告)号：US20220416063A1
公开(公告)日：2022-12-29
申请号：US17851179
申请日：2022-06-28
发明人： Wentao YANG , Loucheng DAI , Chaofan SONG , Boning HUANG , Zhihua LIU
IPC分类号： H01L29/739 , H01L29/06 , H01L29/66
摘要： Embodiments of this application disclose a semiconductor device, a related chip, and a preparation method. The semiconductor device includes an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer. A density of free electrons at the N-type field stop layer is higher than a density of free electrons at the N-type drift layer. The N-type field stop layer includes first type impurity particles and second type impurity particles doped with the first type impurity particles, and a radius of the second type impurity particles is greater than a radius of the first type impurity particles. In the N-type field stop layer, an injection density of the first type impurity particles in a region adjacent to the N-type drift layer is higher than an injection density of the first type impurity particles in any other region.
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公开(公告)号：US20220254877A1
公开(公告)日：2022-08-11
申请号：US17591016
申请日：2022-02-02
发明人： Wentao YANG , Loucheng DAI , Chaofan SONG , Huiling ZUO , Jiang DU , Zhaozheng HOU , Boning HUANG
IPC分类号： H01L29/06 , H01L29/739
摘要： A semiconductor device, and a related module, circuit, and preparation method are disclosed. The device includes an N-type drift layer, a P-type base layer, N-type emitter layers, gates, a field stop layer, a P-type collector layer, and the like. The field stop layer includes a first doped region and a second doped region that are successively stacked on a surface of the N-type drift layer. A particle radius of an impurity in the first doped region is less than a particle radius of an impurity in the second doped region. Doping densities of both the first doped region and the second doped region are higher than a doping density of the N-type drift layer. According to the semiconductor device, a collector-emitter leakage current of an IGBT can be effectively reduced.
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