DRMOS, INTEGRATED CIRCUIT, ELECTRONIC DEVICE, AND PREPARATION METHOD

    公开(公告)号:US20230198512A1

    公开(公告)日:2023-06-22

    申请号:US18170575

    申请日:2023-02-17

    CPC classification number: H03K17/04123 H03K17/162

    Abstract: A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.

    INSULATED GATE BIPOLAR TRANSISTOR, MOTOR CONTROL UNIT, AND VEHICLE

    公开(公告)号:US20230018508A1

    公开(公告)日:2023-01-19

    申请号:US17946111

    申请日:2022-09-16

    Abstract: This application provides an insulated gate bipolar transistor, a motor control unit, and a vehicle. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer (10) and an RC-IGBT device structure feature layer (30) are respectively arranged on two sides of an SJ device structure feature layer (20). The RC-IGBT device structure feature layer (30) includes a collector (12) and a drain (13) that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode (15) laminated with and electrically connected to the collector (12), and a second metal electrode (14) laminated with and electrically connected to the drain (13), and the first metal electrode (15) is electrically isolated from the second metal electrode (14).

    STATIC STATE DETERMINING METHOD AND APPARATUS

    公开(公告)号:US20190277657A1

    公开(公告)日:2019-09-12

    申请号:US16424190

    申请日:2019-05-28

    Abstract: A static state determining method and apparatus are disclosed to resolve a problem in the prior art that accuracy of determining a static state is low. An inertial navigation system obtains a first running data that is measured by an IMU in a first specified duration, determines N first standard deviations of the first running data; matches the N first standard deviations with a prestored database; determines, in the prestored database, a piece of first information corresponding to each of the N second standard deviations; multiplies a first probability in each of the N pieces of first information by a corresponding weight, and adds N values obtained through the multiplication and if the second probability is greater than or equal to a static probability threshold, the inertial navigation system determines that a device in which the inertial navigation system is located is in a static state in the first specified duration.

Patent Agency Ranking