公开(公告)号：US20250012913A1

公开(公告)日：2025-01-09

申请号：US18896041

申请日：2024-09-25

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Shu PENG ,  Kang WANG ,  Shichang HU ,  Qian YU

IPC: G01S13/76 ,  G01S13/02

Abstract: Example ranging methods and apparatus are described. In one example method, a first device sends ranging control information to a second device through a first channel, where the ranging control information is used to configure a ranging frame. The first device receives or sends the ranging frame through a second channel, where a bandwidth of the second channel is greater than a bandwidth of the first channel. Based on the foregoing solution, the first device and the second device may exchange the ranging control information and a measurement result through the first channel, and perform ranging through the second channel.

公开(公告)号：US20220254907A1

公开(公告)日：2022-08-11

申请号：US17669080

申请日：2022-02-10

Applicant: Huawei Technologies Co., Ltd.

Inventor： Loucheng DAI ,  Wentao YANG ,  Huiling ZUO ,  Kang WANG ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/739 ,  H01L23/48 ,  H01L27/102

Abstract: An insulated gate bipolar field-effect transistor (IGBT) includes a semiconductor chip, a gate pin disposed around the semiconductor chip, and an emitter region and n gate regions that are disposed on the semiconductor chip, where n is an integer greater than or equal to 2; x gate regions in the n gate regions are connected to the gate pin, where x is greater than or equal to 1 and less than or equal to n; when there is a different quantity x of gate regions connected to the gate pin, the IGBT is correspondingly applicable to a scenario in which there is a different switching frequency and a different switching loss; and n−x gate regions in the n gate regions are connected to the emitter region.

公开(公告)号：US20220329535A1

公开(公告)日：2022-10-13

申请号：US17808681

申请日：2022-06-24

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bochao LI ,  Bin HE ,  Chuang YANG ,  Kang WANG ,  Jianjian ZHU

IPC: H04L47/2483 ,  H04W28/08 ,  H04L47/2441 ,  H04L45/00

Abstract: A data flow control method. During selection of an initial transmission path for a newly created data flow, a Flow Completion Time (FCT) for outputting the data flow through a plurality of networks are estimated, and a network corresponding to a relatively short estimated time is selected to transmit the data flow. In addition, in a data flow transmission process, a network transmission requirement of an application corresponding to a sent data packet is identified, transmission performance on a current path is evaluated based on a type of a service carried in the data flow, and whether the data flow needs to be changed is determined based on transmission performance of a link currently accessed by a terminal.

公开(公告)号：US20250016702A1

公开(公告)日：2025-01-09

申请号：US18886217

申请日：2024-09-16

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wei WANG ,  Qian YU ,  Kang WANG ,  Fangli LIANG

IPC: H04W56/00 ,  H04B1/7163 ,  H04L25/02

Abstract: This application provides example ultra-wideband (UWB) signal synchronization methods and example communication apparatuses. One example method includes processing a narrowband signal to obtain time-frequency synchronization information of the narrowband signal. A synchronization signal of an UWB signal can be processed based on the time-frequency synchronization information of the narrowband signal to obtain time-frequency synchronization information of the UWB signal, where the UWB signal includes the synchronization signal and a ranging signal. The ranging signal can be received based on the time-frequency synchronization information of the UWB signal.

公开(公告)号：US20230411445A1

公开(公告)日：2023-12-21

申请号：US18459563

申请日：2023-09-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wentao YANG ,  Kang WANG ,  Chaofan SONG ,  Lianghao WANG ,  Qian ZHAO ,  Loucheng DAI ,  Zhaozheng HOU ,  Boning HUANG

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/0615 ,  H01L29/7397 ,  H01L29/66348

Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.