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公开(公告)号：US11777020B2
公开(公告)日：2023-10-03
申请号：US17159093
申请日：2021-01-26
发明人： Atsushi Shoji , Soichi Yoshida
IPC分类号： H01L29/739 , H01L29/06 , H01L29/417 , H01L29/861
CPC分类号： H01L29/7397 , H01L29/0607 , H01L29/41708 , H01L29/861
摘要： Provided is a semiconductor device including: a semiconductor substrate; an active portion provided on the semiconductor substrate; a first well region and a second well region arranged sandwiching the active portion in a top view, provided on the semiconductor substrate; an emitter electrode arranged above the active portion; and a pad arranged above the first well region, away from the emitter electrode, wherein the emitter electrode is provided above the second well region. The provided semiconductor device further includes a peripheral well region arranged enclosing the active portion in a top view, wherein the first well region and the second well region may protrude to the center side of the active portion rather than the peripheral well region.
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公开(公告)号：US11049785B2
公开(公告)日：2021-06-29
申请号：US16589111
申请日：2019-09-30
发明人： Motoyoshi Kubouchi , Soichi Yoshida
IPC分类号： H01L23/34 , H01L27/06 , H01L29/06 , H01L21/22 , H01L29/32 , H01L29/40 , H01L29/739 , H01L29/10
摘要： In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.
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公开(公告)号：US10770456B2
公开(公告)日：2020-09-08
申请号：US16258480
申请日：2019-01-25
发明人： Soichi Yoshida , Hiroshi Miyata
IPC分类号： H01L27/07 , H01L29/739 , H01L29/861 , H01L29/10 , H01L29/417 , H01L29/08 , H01L29/78 , H01L29/40 , H01L29/868 , H01L29/423 , H01L29/32 , H01L29/06 , H01L21/265
摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a transistor region, and the transistor region includes a drift region, a plurality of trench portions, a plurality of emitter regions and a plurality of contact regions, and an accumulation region provided between the drift region and the plurality of emitter regions in a depth direction, and having a higher first-conductivity-type doping concentration than the drift region. A first outermost contact region is an outermost one of the plurality of contact regions in a direction parallel to the first direction, and a length of the first outermost contact region in the first direction is longer than a length in the first direction of one contact region of the plurality of contact regions other than the first outermost contact region, and the accumulation region terminates at a position below the first outermost contact region.
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公开(公告)号：US12068404B2
公开(公告)日：2024-08-20
申请号：US18472259
申请日：2023-09-22
发明人： Atsushi Shoji , Soichi Yoshida
IPC分类号： H01L29/739 , H01L29/06 , H01L29/417 , H01L29/861
CPC分类号： H01L29/7397 , H01L29/0607 , H01L29/41708 , H01L29/861
摘要： Provided is a semiconductor device including: a semiconductor substrate; an active portion provided on the semiconductor substrate; a first well region and a second well region arranged sandwiching the active portion in a top view, provided on the semiconductor substrate; an emitter electrode arranged above the active portion; and a pad arranged above the first well region, away from the emitter electrode, wherein the emitter electrode is provided above the second well region. The provided semiconductor device further includes a peripheral well region arranged enclosing the active portion in a top view, wherein the first well region and the second well region may protrude to the center side of the active portion rather than the peripheral well region.
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公开(公告)号：US12015058B2
公开(公告)日：2024-06-18
申请号：US18333562
申请日：2023-06-13
发明人： Yoshiharu Kato , Toru Ajiki , Tohru Shirakawa , Misaki Takahashi , Kaname Mitsuzuka , Takashi Yoshimura , Yuichi Onozawa , Hiroshi Takishita , Soichi Yoshida
IPC分类号： H01L29/36 , H01L21/265 , H01L29/06 , H01L29/10
CPC分类号： H01L29/36 , H01L21/265 , H01L29/0615 , H01L29/1095
摘要： A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.
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公开(公告)号：US11715771B2
公开(公告)日：2023-08-01
申请号：US17078042
申请日：2020-10-22
发明人： Yoshiharu Kato , Toru Ajiki , Tohru Shirakawa , Misaki Takahashi , Kaname Mitsuzuka , Takashi Yoshimura , Yuichi Onozawa , Hiroshi Takishita , Soichi Yoshida
IPC分类号： H01L29/36 , H01L21/265 , H01L29/06 , H01L29/10
CPC分类号： H01L29/36 , H01L21/265 , H01L29/0615 , H01L29/1095
摘要： Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.
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公开(公告)号：US12009268B2
公开(公告)日：2024-06-11
申请号：US18352285
申请日：2023-07-14
IPC分类号： H01L29/739 , H01L21/22 , H01L21/265 , H01L21/324 , H01L21/66 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/861
CPC分类号： H01L22/12 , H01L21/221 , H01L21/265 , H01L21/26526 , H01L21/324 , H01L27/0664 , H01L29/0611 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/1095 , H01L29/32 , H01L29/407 , H01L29/7397 , H01L29/8613
摘要： A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions. In a cross section along the first direction and perpendicular to the upper and lower surfaces and passing through the lower surface region, one end portion of the bottom region in the first direction locates directly above the lower surface region.
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公开(公告)号：US11955540B2
公开(公告)日：2024-04-09
申请号：US17210498
申请日：2021-03-24
发明人： Soichi Yoshida
IPC分类号： H01L29/739 , H01L29/861
CPC分类号： H01L29/7397 , H01L29/861
摘要： Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.
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公开(公告)号：US11869960B2
公开(公告)日：2024-01-09
申请号：US17210498
申请日：2021-03-24
发明人： Soichi Yoshida
IPC分类号： H01L29/739 , H01L29/861
CPC分类号： H01L29/7397 , H01L29/861
摘要： Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.
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公开(公告)号：US11552165B2
公开(公告)日：2023-01-10
申请号：US17320115
申请日：2021-05-13
发明人： Soichi Yoshida
IPC分类号： H01L29/06 , H01L29/66 , H01L29/10 , H01L21/22 , H01L29/739 , H01L27/07 , H01L29/78 , H01L27/088 , H01L21/8234 , H01L29/868 , H01L27/06 , H01L29/861 , H01L21/322
摘要： A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate. The transistor section has gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than that of an emitter region, and to each of which a gate potential is applied. An upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate.
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