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公开(公告)号：US20180083654A1
公开(公告)日：2018-03-22
申请号：US15711877
申请日：2017-09-21
发明人： Kurt BATY
CPC分类号： H03M13/2906 , G06F11/08 , G06F11/1068 , G11C29/52 , H03M13/05
摘要： Apparatus, methods, and systems are disclosed for performing bit error correction on a data stream. In some aspects, the described systems and methods may include a plurality of memory devices, a first interface, and a field programmable gate array. The field programmable gate array may include a memory controller and a plurality of re-programmable gates. At least one of the re-programmable gates may be configured as a read-only memory (ROM) to store a syndrome decode memory table, wherein the syndrome decode memory table may be configured to perform bit error correction on the data stream being read and/or written to at least one memory device of the plurality of memory devices via the first interface.
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公开(公告)号：US09910106B2
公开(公告)日：2018-03-06
申请号：US15134134
申请日：2016-04-20
IPC分类号： G01R33/09
CPC分类号： G01R33/091 , G01R33/096 , G01R33/098
摘要： A magnetic field sensor includes a plurality of transducer legs coupled together as a first circuit to sense a magnetic field, wherein each transducer leg comprises a plurality of magnetoresistance sense elements. The magnetic field sensor also includes a second circuit including a first plurality of current lines, wherein each current line of the first plurality of current lines is adjacent to a corresponding plurality of magnetoresistance sense elements of a transducer leg of the plurality of transducer legs. When at least one current line of the first plurality of current lines is energized, a magnetization of each magnetoresistance sense element of the transducer leg is aligned in a first direction or a second direction opposite to the first direction. A routing pattern of the at least one current line is configured to generate an equal population of magnetoresistance sense elements with magnetization aligned in the first and second directions.
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53.发明授权公开(公告)号：US09893275B2
公开(公告)日：2018-02-13
申请号：US15396700
申请日：2017-01-02
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
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公开(公告)号：US20170301857A1
公开(公告)日：2017-10-19
申请号：US15638757
申请日：2017-06-30
CPC分类号： H01L43/12 , G11B5/3163 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , Y10T29/49021
摘要： Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers and then depositing additional encapsulating material prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
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公开(公告)号：US20170301384A1
公开(公告)日：2017-10-19
申请号：US15636970
申请日：2017-06-29
发明人： Thomas ANDRE , Syed M. ALAM , Chitra SUBRAMANIAN
CPC分类号： G11C11/1675 , G11C7/02 , G11C7/065 , G11C11/16 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1693 , G11C2013/0057 , G11C2207/002
摘要： An apparatus used in a self-referenced read of a memory bit cell includes circuitry including a plurality of transistors that includes an NMOS-follower transistor for applying a read voltage to a first end of the bit cell. An offset current is applied by an offset current transistor. A transmission gate allows for isolation of a capacitor used to store a sample voltage corresponding to the read voltage applied across the memory bit cell.
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公开(公告)号：US09766301B2
公开(公告)日：2017-09-19
申请号：US14953572
申请日：2015-11-30
发明人： Lianjun Liu , Phillip Mather , Jon Slaughter
CPC分类号： G01R33/0029 , G01R33/0041 , G01R33/04 , G01R33/098
摘要： A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.
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公开(公告)号：US09728583B2
公开(公告)日：2017-08-08
申请号：US15249559
申请日：2016-08-29
CPC分类号： H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A layer of silicon nitride above the bottom electrode and on the sidewalls of the magnetoresistive stack serves as an insulator and an etch stop during manufacturing of a magnetoresistive device. Non-selective chemical mechanical polishing removes any silicon nitride overlying a top electrode for the device along with silicon dioxide used for encapsulation. Later etching operations corresponding to formation of a via to reach the top electrode use selective etching chemistries that remove silicon dioxide to access the top electrode, but do not remove silicon nitride. Thus, the silicon nitride acts as an etch stop, and, in the resulting device, provides an insulating layer that prevents unwanted short circuits between the via and the bottom electrode and between the via and the sidewalls of the magnetoresistive device stack.
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公开(公告)号：US09722176B2
公开(公告)日：2017-08-01
申请号：US14991660
申请日：2016-01-08
CPC分类号： H01L43/12 , G11B5/3163 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , Y10T29/49021
摘要： Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
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公开(公告)号：US09721632B2
公开(公告)日：2017-08-01
申请号：US15406684
申请日：2017-01-14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1695 , G11C11/1697 , G11C29/70 , G11C29/74 , G11C29/838 , G11C2213/78 , G11C2213/79
摘要： Memory cells in a spin-torque magnetic random access memory (MRAM) include at least two magnetic tunnel junctions within each memory cell, where each memory cell only stores a single data bit of information. Access circuitry coupled to the memory cells are able to read from and write to a memory cell even when one of the magnetic tunnel junctions within the memory cell is defective and is no longer functional. Self-referenced and referenced reads can be used in conjunction with the multiple magnetic tunnel junction memory cells. In some embodiments, writing to the memory cell forces all magnetic tunnel junctions into a known state, whereas in other embodiments, a subset of the magnetic tunnel junctions are forced to a known state.
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公开(公告)号：US09711566B1
公开(公告)日：2017-07-18
申请号：US15230402
申请日：2016-08-06
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08 , H01L43/12
摘要： Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.
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