公开(公告)号：US20090057928A1

公开(公告)日：2009-03-05

申请号：US11849545

申请日：2007-09-04

申请人： Jun Zhai ,  Ranjit Gannamani ,  Srinivasan Parthasarathy

发明人： Jun Zhai ,  Ranjit Gannamani ,  Srinivasan Parthasarathy

IPC分类号： H01L23/18 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L23/053 ,  H01L23/3164 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/00 ,  H01L2924/00014

摘要： Various semiconductor chip underfills and methods of making the same are provided. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate to leave a gap therebetween, and forming an underfill layer in the gap. The underfill layer includes a first plurality of filler particles that have a first average size and a second plurality of filler particles that have a second average size smaller than the first average size such that the first plurality of filler particles is concentrated proximate the substrate and the second plurality of filler particles is concentrated proximate the semiconductor chip so that a bulk modulus of the underfill layer is larger proximate the substrate than proximate the semiconductor chip.

摘要翻译： 提供各种半导体芯片底层填料及其制造方法。 一方面，提供了一种制造方法，其包括将半导体芯片耦合到基板以在其间留下间隙，并在间隙中形成底部填充层。 底部填充层包括具有第一平均尺寸的第一多个填料颗粒和具有小于第一平均尺寸的第二平均尺寸的第二多个填料颗粒，使得第一多个填料颗粒在基材附近集中， 第二多个填料颗粒集中在半导体芯片附近，使得底部填充层的体积模量在靠近衬底的位置比靠近半导体芯片更大。

公开(公告)号：US20090039494A1

公开(公告)日：2009-02-12

申请号：US12220871

申请日：2008-07-28

申请人： Christian Kroneder

发明人： Christian Kroneder

IPC分类号： H01L23/18 ,  H01L21/52

CPC分类号： H01L23/24 ,  H01L21/4878 ,  H01L21/50 ,  H01L23/10 ,  H01L23/4006 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/8384 ,  H01L2924/1301 ,  H01L2924/203 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0002

摘要： A power semiconductor module comprising a housing of a first plastic, at least one substrate carrier with a circuit constructed thereon and electric terminating elements extending therefrom. The housing includes attachment means for its permanent connection with the substrate carrier. The housing has a permanently elastic sealing device of a second plastic which is formed integrally with the housing and encircles and is directed towards a first inner main surface of the substrate carrier. A method for constructing such a module includes the steps of constructing a housing of a first mechanically stable plastic and a sealing device of a second permanently elastic plastic; disposing the at least one substrate carrier on the housing; and permanently connecting the housing to the substrate carrier.

摘要翻译： 一种功率半导体模块，包括第一塑料的壳体，至少一个其上构造有电路的基板载体和从其延伸的电终端元件。 壳体包括用于与衬底载体永久连接的附接装置。 壳体具有与壳体一体形成并环绕并且朝向衬底载体的第一内主表面的第二塑料的永久弹性密封装置。 构造这种模块的方法包括以下步骤：构造第一机械稳定塑料的壳体和第二永久弹性塑料的密封装置; 将所述至少一个基板载体设置在所述壳体上; 并且将壳体永久地连接到衬底载体。

公开(公告)号：US20050215044A1

公开(公告)日：2005-09-29

申请号：US10907156

申请日：2005-03-23

申请人： Min-Lung Huang

发明人： Min-Lung Huang

IPC分类号： H01L21/44 ,  H01L21/469 ,  H01L21/60 ,  H01L23/18 ,  H01L23/485

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/29099 ,  H01L2224/05099

摘要： A method for forming a photoresist layer on a substrate to improve the joining of the photoresist layer and the substrate is provided. For a bumping process using the method, a liquid is used to react with the photoresist layer to form a combination layer of good fluidity between the photoresist layer and the passivation layer on the substrate. The combination layer fills the pits of the passivation layer to improve the joining of the photoresist layer and the passivation layer. Therefore, when the solder material is filled into the openings, no solder material stays between the photoresist layer and the passivation layer, so as to avoid solder bridging between the two adjacent pads.

摘要翻译： 提供了在基板上形成光致抗蚀剂层以改善光致抗蚀剂层和基板的接合的方法。 对于使用该方法的碰撞过程，使用液体与光致抗蚀剂层反应，以在光致抗蚀剂层和基底上的钝化层之间形成良好流动性的组合层。 组合层填充钝化层的凹坑以改善光致抗蚀剂层和钝化层的接合。 因此，当焊料材料填充到开口中时，在光致抗蚀剂层和钝化层之间不存在焊料材料，以避免两个相邻焊盘之间的焊料桥接。

公开(公告)号：US20050085564A1

公开(公告)日：2005-04-21

申请号：US10688689

申请日：2003-10-16

申请人： George Thiel

发明人： George Thiel

IPC分类号： C08L61/24 ,  C08L63/00 ,  C08L65/00 ,  H01L21/54 ,  H01L21/56 ,  H01L23/18 ,  H01L23/28 ,  H01L23/29 ,  H05K3/22 ,  H05K3/30

CPC分类号： H05K3/305 ,  C08L61/24 ,  C08L63/00 ,  C08L65/00 ,  H01L21/563 ,  H01L23/293 ,  H01L2224/73203 ,  H05K3/225 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/1163 ,  Y02P70/613 ,  C08L2666/02

摘要： A method of self-healing cracks in a cured epoxy base underfill material between an I/C chip and a substrate is provided. A plurality of capsules is dispersed in the epoxy base. Each capsule has a curable thermosetting adhesive encapsulated in a rupturable shell to disperse the thermosetting adhesive in a crack in the epoxy base when the shell ruptures. Each capsule is less than 25 microns in diameter. A curing agent that will cause a reaction of the thermosetting adhesive on contact is dispersed in the epoxy to form a cured adhesive in a crack in said epoxy base. The shell will rupture when encountering a crack being propagated in the underfill material, which will at least partially fill the crack with the adhesive, and cure the adhesive with the curing agent to bond the edges of the crack together. The invention also includes the structure for crack self-healing.

摘要翻译： 提供了在I / C芯片和基板之间的固化环氧基底层填充材料中的自愈裂纹的方法。 多个胶囊分散在环氧基体中。 每个胶囊具有封装在可破裂外壳中的可固化热固性粘合剂，以在壳体破裂时将热固性粘合剂分散在环氧基体中的裂纹中。 每个胶囊的直径小于25微米。 将导致热固性粘合剂接触反应的固化剂分散在环氧树脂中以在所述环氧基体中的裂纹中形成固化的粘合剂。 当遇到在底部填充材料中传播的裂纹时，壳会破裂，这将使用粘合剂至少部分地填充裂纹，并且用固化剂固化粘合剂以将裂纹的边缘粘合在一起。 本发明还包括裂纹自愈的结构。

公开(公告)号：US5635754A

公开(公告)日：1997-06-03

申请号：US372289

申请日：1995-01-13

申请人： David J. Strobel ,  David R. Czajkowski

发明人： David J. Strobel ,  David R. Czajkowski

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/057 ,  H01L23/06 ,  H01L23/08 ,  H01L23/18 ,  H01L23/552 ,  H01L25/04 ,  H01L25/065 ,  H01L23/043

CPC分类号： H01L23/055 ,  H01L23/057 ,  H01L23/18 ,  H01L23/552 ,  H01L25/0655 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025

摘要： The radiation shielded and packaged integrated circuit semiconductor device includes a lid secured to a base to enclose the integrated circuit die within, wherein the lid and the base are each constructed from a high-Z material to prevent radiation from penetrating therethrough. Another embodiment includes a die attach slug constructed from a high-Z material disposed between the integrated circuit die and a base, in combination with a high-Z material lid to substantially block incident radiation.

摘要翻译： 辐射屏蔽和封装的集成电路半导体器件包括固定到基座以将集成电路管芯封装在其内的盖，其中盖和基座各自由高Z材料构成以防止辐射穿过其中。 另一实施例包括由设置在集成电路管芯和基座之间的高Z材料构成的芯片附接块，与高Z材料盖组合以基本上阻挡入射辐射。

公开(公告)号：US5459655A

公开(公告)日：1995-10-17

申请号：US947544

申请日：1992-09-21

申请人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Kiyoshi Nakata ,  Syuuji Saitoo ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

发明人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Kiyoshi Nakata ,  Syuuji Saitoo ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

IPC分类号： H01L21/331 ,  H01L23/04 ,  H01L23/18 ,  H01L23/24 ,  H01L25/065 ,  H01L25/07 ,  H01L25/16 ,  H02M7/00 ,  H02M7/48 ,  H02M7/487 ,  H03K17/0814 ,  H02M7/5387

CPC分类号： H03K17/08148 ,  H01L23/04 ,  H01L23/18 ,  H01L23/24 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L29/66333 ,  H02M7/003 ,  H02M7/487 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01055 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351

摘要： An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.

摘要翻译： 逆变器装置包括多个模块，每个模块由具有第一开关装置和第一二极管的并联电路的串联电路以及第二开关装置和第二二极管的并联电路形成，允许尺寸减小，可靠性高 ，高频开关和低噪声。 每个模块形成逆变器的一个臂部分。 二极管和开关器件的寿命设定为使逆变器的损耗相等。 优选地，由扩散形成的绝缘栅双极晶体管（IGBT）用作开关器件，因为这些器件的寿命可以容易地被调整以优化逆变器的设计。

公开(公告)号：US4734754A

公开(公告)日：1988-03-29

申请号：US730181

申请日：1985-05-03

申请人： Kiyoshi Nikawa

发明人： Kiyoshi Nikawa

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/10 ,  H01L23/18 ,  H01L23/48

CPC分类号： H01L23/53214 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A semiconductor device comprises a lower wiring layer, an intermediate insulating film on the lower wiring layer and an upper wiring layer crossing the lower wiring layer via the intermediate insulating film. At least one opening is provided in the intermediate insulating film in the vicinity of the upper wiring layer but separated from the upper wiring layer to expose a surface portion of the lower wiring layer. In such a structure, when an electrical current flows through the lower wiring layer with a high density, whiskers or hillocks from the lower wiring layer grow definitively only in the opening, and hardly glow from a portion of the lower wiring layer under the upper wiring layer. Therefore, unwanted short-circuiting between the lower and upper wiring layers can be prevented.

摘要翻译： 半导体器件包括下布线层，下布线层上的中间绝缘膜和经由中间绝缘膜与下布线层交叉的上布线层。 在中间绝缘膜中至少有一个开口设置在上部布线层附近，但与上部布线层分离，露出下部布线层的表面部分。 在这种结构中，当电流以较高的密度流过下布线层时，来自下布线层的晶须或小丘仅在开口中生长，并且几乎不会从上布线下的下布线层的一部分发光 层。 因此，可以防止下布线层和上布线层之间的不期望的短路。

公开(公告)号：US4561006A

公开(公告)日：1985-12-24

申请号：US395551

申请日：1982-07-06

申请人： Thomas P. Currie

发明人： Thomas P. Currie

IPC分类号： H05K3/34 ,  B23K1/00 ,  H01L23/12 ,  H01L23/34 ,  H05K1/02 ,  H05K1/03 ,  H05K1/16 ,  H05K3/36 ,  H01L21/48 ,  H01L23/14 ,  H01L23/18

CPC分类号： H01L23/345 ,  H05K1/0212 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83234 ,  H01L24/73 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15322 ,  H05K1/0306 ,  H05K1/167 ,  H05K2201/09181 ,  H05K2201/10303 ,  H05K2201/10477 ,  H05K2201/10727 ,  H05K2203/1115 ,  H05K2203/176 ,  H05K3/3405 ,  H05K3/3447 ,  H05K3/3494 ,  H05K3/368

摘要： An integrated circuit package having an auxiliary heating element incorporated therein is described. The integral heating element is accessible for application of electric power from an external source to cause heating of the integral circuit package to a predetermined level at which solder will melt and flow, thereby allowing removal and reinsertion of the integrated circuit package with relationship to associated pins in a support assembly. The integral heating element provides a means for applying controlled heat to the integrated circuit package such that the package can be unsoldered from or soldered to associated electrical interconnection pins, some of which may be hidden from view or physical access.

摘要翻译： 描述了其中结合有辅助加热元件的集成电路封装。 集成加热元件可用于从外部源施加电力，以使积分电路封装的加热达到预定水平，焊料将熔化和流动，从而允许与相关引脚的关系移除和重新插入集成电路封装 在支撑组件中。 集成加热元件提供了用于向集成电路封装施加受控热的装置，使得封装可以从未被焊接或焊接到相关联的电互连引脚，其中一些可能隐藏在视图或物理访问之外。

公开(公告)号：US20240186198A1

公开(公告)日：2024-06-06

申请号：US18437899

申请日：2024-02-09

申请人： STMicroelectronics S.r.l.

发明人： Pierangelo MAGNI ,  Michele DERAI

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/18 ,  H01L23/498

CPC分类号： H01L23/3107 ,  H01L21/561 ,  H01L23/18 ,  H01L23/49838

摘要： A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pattern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.

公开(公告)号：US20240153834A1

公开(公告)日：2024-05-09

申请号：US18483312

申请日：2023-10-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jun Ho LEE ,  Hyo Eun KIM

IPC分类号： H01L23/18 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/48 ,  H01L25/065

CPC分类号： H01L23/18 ,  H01L23/3171 ,  H01L23/367 ,  H01L23/481 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204

摘要： A semiconductor package is provided. The semiconductor package comprises a first semiconductor chip including a first semiconductor substrate, a through-via in the first semiconductor substrate, a second semiconductor chip on the first semiconductor chip, a filler structure extending from a top surface of the first semiconductor chip into the first semiconductor chip, and a heat spreader including a column portion spaced apart from the second semiconductor chip and disposed on the filler structure and a roof portion disposed on the second semiconductor chip and connected to the column portion.