公开(公告)号：US08383457B2

公开(公告)日：2013-02-26

申请号：US12875981

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24101 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/27002 ,  H01L2224/29 ,  H01L2224/2902 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32155 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/078 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/186 ,  H05K3/007 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2924/01014 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 插入器框架在插入器框架中具有开口，并且在内插器框架上形成多个导电柱。 插入器安装在载体上，并且第一管芯与设置在管芯周围的导电柱相连。 可以在插入器框架中形成空腔以容纳第一模具的一部分。 密封剂通过载体和第一模具上的插入器框架中的开口沉积。 或者，密封剂沉积在载体上并且第一模头和插入器框架被压靠在密封剂上。 过多的密封剂通过插入器框架中的开口离开。 载体被移除。 在密封剂和第一模具上形成互连结构。 第二半导体管芯可以安装在第一管芯上方或内插架框架上。

公开(公告)号：US08343810B2

公开(公告)日：2013-01-01

申请号：US12857362

申请日：2010-08-16

申请人： JiHoon Oh ,  SinJae Lee ,  JinGwan Kim

发明人： JiHoon Oh ,  SinJae Lee ,  JinGwan Kim

IPC分类号： H01L21/50

CPC分类号： H01L23/5384 ,  H01L21/486 ,  H01L21/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/92244 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K1/186 ,  H05K3/007 ,  H05K3/4602 ,  H05K3/4608 ,  H05K2201/0195 ,  H05K2201/10674 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/0105 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83

摘要： A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.

摘要翻译： Fo-WLCSP具有围绕半导体管芯形成的第一聚合物层。 通过围绕半导体管芯的周边的第一聚合物层形成第一导电通孔。 第一互连结构形成在第一聚合物层的第一表面上并电连接到第一导电通孔。 第一互连结构具有第二聚合物层和穿过第二聚合物层形成的多个第二通孔。 第二互连结构形成在第一聚合物层的第二表面上并电连接到第一导电通孔。 第二互连结构具有第三聚合物层和穿过第三聚合物层形成的多个第三通孔。 可以以PoP布置将半导体封装安装到WLCSP。 半导体封装通过第一互连结构或第二互连结构电连接到WLCSP。

公开(公告)号：US20120313253A1

公开(公告)日：2012-12-13

申请号：US13155719

申请日：2011-06-08

申请人： Yoshikuni Nakadaira ,  Norihito Masuda ,  Belgacem Haba ,  Ilyas Mohammed ,  Philip Damberg ,  Hiroaki Sato ,  Kiyoaki Hashimoto

发明人： Yoshikuni Nakadaira ,  Norihito Masuda ,  Belgacem Haba ,  Ilyas Mohammed ,  Philip Damberg ,  Hiroaki Sato ,  Kiyoaki Hashimoto

IPC分类号： H01L23/522 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L21/561 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/02 ,  H01L24/03 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/96 ,  H01L2224/0231 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/215 ,  H01L2224/24011 ,  H01L2224/24225 ,  H01L2224/245 ,  H01L2224/29008 ,  H01L2224/32225 ,  H01L2224/73217 ,  H01L2224/76155 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82103 ,  H01L2224/82104 ,  H01L2224/8284 ,  H01L2224/83053 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A microelectronic package includes a microelectronic unit and a substrate. The microelectronic unit includes a microelectronic element having contacts on a front face. A dielectric material has a first surface substantially flush with the front face of the microelectronic element. Conductive traces have at least portions extending along the front face away from the contacts, at least some of which also extend along the first surface of the dielectric material. Contacts are connected with the traces, at least some of which are disposed at the first surface of the dielectric material. The substrate has first and second opposed surfaces and an edge extending therebetween, the first surface facing the front face of the microelectronic unit, and the second surface having a plurality of terminals thereon configured for electrical connection with at least one external component. Masses of conductive matrix material join the terminals with the redistribution contacts.

摘要翻译： 微电子封装包括微电子单元和衬底。 微电子单元包括具有在正面上的触点的微电子元件。 电介质材料具有与微电子元件的前表面基本齐平的第一表面。 导电迹线具有沿着前表面远离触点延伸的至少部分，其中至少一些部分还沿电介质材料的第一表面延伸。 触头与迹线连接，其中至少一些设置在电介质材料的第一表面。 衬底具有第一和第二相对表面和在其间延伸的边缘，第一表面面向微电子单元的前表面，并且第二表面具有多个端子，其构造成用于与至少一个外部部件电连接。 导电基体材料的质量与再分布接触端子连接。

公开(公告)号：US20120056329A1

公开(公告)日：2012-03-08

申请号：US12875981

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24101 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/27002 ,  H01L2224/29 ,  H01L2224/2902 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32155 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/078 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/186 ,  H05K3/007 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2924/01014 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 插入器框架在插入器框架中具有开口，并且在内插器框架上形成多个导电柱。 插入器安装在载体上，并且第一管芯与设置在管芯周围的导电柱相连。 可以在插入器框架中形成空腔以容纳第一模具的一部分。 密封剂通过载体和第一模具上的插入器框架中的开口沉积。 或者，密封剂沉积在载体上并且第一模头和插入器框架被压靠在密封剂上。 过多的密封剂通过插入器框架中的开口离开。 载体被移除。 在密封剂和第一模具上形成互连结构。 第二半导体管芯可以安装在第一管芯上方或内插架框架上。

公开(公告)号：US20110316123A1

公开(公告)日：2011-12-29

申请号：US12801837

申请日：2010-06-28

申请人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Atsushi Iijima

发明人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Atsushi Iijima

IPC分类号： H01L23/544 ,  H01L21/78

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/522 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02317 ,  H01L2224/02321 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0392 ,  H01L2224/04026 ,  H01L2224/05008 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/24011 ,  H01L2224/24146 ,  H01L2224/245 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32148 ,  H01L2224/82005 ,  H01L2224/821 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/8313 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06565 ,  H01L2924/01029 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/00

摘要： In a laminated semiconductor substrate, a plurality of semiconductor substrates are laminated. Each of the semiconductor substrate has a plurality of scribe-groove parts formed along scribe lines. Further, each of the semiconductor substrate has a plurality of device regions insulated from each other and has a semiconductor device formed therein, a first wiring electrode and a second wiring electrode extend to the inside of a interposed groove part from a first device region and a second device region respectively, and are separated from each other. In the laminated semiconductor substrate, a through hole which the first wiring electrode appears is formed. The laminated semiconductor substrate has a through electrode. The through electrode is contact with all of the first wiring electrodes appearing in the through hole. The laminated semiconductor substrate has a plurality of laminated chip regions.

摘要翻译： 在层叠半导体衬底中层叠多个半导体衬底。 每个半导体衬底具有沿着划线形成的多个划线槽部分。 此外，每个半导体衬底具有彼此绝缘的多个器件区域，并且其中形成有半导体器件，第一布线电极和第二布线电极从第一器件区域延伸到插入的沟槽部分的内部，并且 第二装置区域，并且彼此分离。 在层叠半导体基板中，形成有第一配线电极的通孔。 层叠半导体基板具有贯通电极。 通孔与通孔中出现的所有第一布线电极接触。 层叠半导体衬底具有多个层叠芯片区域。

公开(公告)号：US08008123B2

公开(公告)日：2011-08-30

申请号：US12892993

申请日：2010-09-29

申请人： Syota Miki

发明人： Syota Miki

IPC分类号： H01L21/00

CPC分类号： H01L24/96 ,  H01L23/16 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/1319 ,  H01L2224/13611 ,  H01L2224/2402 ,  H01L2224/2405 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device, including a first step of forming a first electrode pad at an external edge part of a semiconductor chip mounting area of a supporting board; a second step of fixing a rear surface of a semiconductor chip having a main surface, the main surface where a second electrode pad is formed, to an inside of an area of the main surface of the supporting board, the area where the first electrode pad is formed; a third step of forming a first internal connecting terminal on the first electrode pad, and forming a second internal connecting terminal on the second electrode pad; and a fourth step of forming a first insulation layer on the main surface of the supporting board.

摘要翻译： 一种半导体器件的制造方法，包括：在支撑板的半导体芯片安装区域的外缘部形成第一电极焊盘的第一工序; 将具有主表面的主表面（形成有第二电极焊盘的主表面）固定到支撑板的主表面的区域的内部的第二步骤，其中第一电极焊盘 形成了; 第三步骤，在所述第一电极焊盘上形成第一内部连接端子，并在所述第二电极焊盘上形成第二内部连接端子; 以及在支撑板的主表面上形成第一绝缘层的第四步骤。

公开(公告)号：US20110151645A1

公开(公告)日：2011-06-23

申请号：US12892993

申请日：2010-09-29

申请人： Syota MIKI

发明人： Syota MIKI

IPC分类号： H01L21/784 ,  H01L21/28

CPC分类号： H01L24/96 ,  H01L23/16 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/1319 ,  H01L2224/13611 ,  H01L2224/2402 ,  H01L2224/2405 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device, including a first step of forming a first electrode pad at an external edge part of a semiconductor chip mounting area of a supporting board; a second step of fixing a rear surface of a semiconductor chip having a main surface, the main surface where a second electrode pad is formed, to an inside of an area of the main surface of the supporting board, the area where the first electrode pad is formed; a third step of forming a first internal connecting terminal on the first electrode pad, and forming a second internal connecting terminal on the second electrode pad; and a fourth step of forming a first insulation layer on the main surface of the supporting board.

摘要翻译： 一种半导体器件的制造方法，包括：在支撑板的半导体芯片安装区域的外缘部形成第一电极焊盘的第一工序; 将具有主表面的主表面（形成有第二电极焊盘的主表面）固定到支撑板的主表面的区域的内部的第二步骤，其中第一电极焊盘 形成了; 第三步骤，在所述第一电极焊盘上形成第一内部连接端子，并在所述第二电极焊盘上形成第二内部连接端子; 以及在支撑板的主表面上形成第一绝缘层的第四步骤。

公开(公告)号：US20100248475A1

公开(公告)日：2010-09-30

申请号：US12415757

申请日：2009-03-31

申请人： Manfred Mengel ,  Thomas Spoettl ,  Frank Pueschner

发明人： Manfred Mengel ,  Thomas Spoettl ,  Frank Pueschner

IPC分类号： H01L21/768

CPC分类号： H01L24/82 ,  C25D7/12 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/492 ,  H01L23/49517 ,  H01L24/03 ,  H01L24/24 ,  H01L24/76 ,  H01L2224/03462 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24051 ,  H01L2224/24101 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/24246 ,  H01L2224/24247 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/24998 ,  H01L2224/25171 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/76189 ,  H01L2224/766 ,  H01L2224/821 ,  H01L2224/82102 ,  H01L2224/82108 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/92244 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/29075 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.

摘要翻译： 公开了制造半导体器件的方法。 在一个实施例中，该方法包括提供包括导电层的至少一个半导体芯片。 向电极施加电压。 电极在导电层上移动，用于在导电层上生长金属层。

公开(公告)号：US5161093A

公开(公告)日：1992-11-03

申请号：US546959

申请日：1990-07-02

申请人： Thomas B. Gorczyca ,  Stanton E. Weaver, Jr. ,  Robert J. Wojnarowski

发明人： Thomas B. Gorczyca ,  Stanton E. Weaver, Jr. ,  Robert J. Wojnarowski

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/04 ,  H01L25/18 ,  H05K3/38 ,  H05K3/46

CPC分类号： H01L24/25 ,  H01L21/4857 ,  H01L23/49894 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/3011

摘要： A high density interconnect structure incorporating a plurality of laminated dielectric layers is fabricated using a SPI/epoxy crosslinking copolymer blend adhesive in order to maintain the stability of the already fabricated structure during the addition of the later laminations while also maintaining the repairability of the high density interconnect structure.

公开(公告)号：US20240258465A1

公开(公告)日：2024-08-01

申请号：US18221984

申请日：2023-07-14

申请人： LG Display Co., Ltd.

发明人： Minjae KANG ,  Dongseok LEE ,  Jusang RHIM ,  Sunghwan YOON ,  Yuseop SHIN ,  Rokhee LEE

IPC分类号： H01L33/40 ,  G09G3/32 ,  H01L23/00 ,  H01L25/16 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L33/40 ,  G09G3/32 ,  H01L24/24 ,  H01L25/167 ,  H01L33/483 ,  H01L33/62 ,  G09G2300/0842 ,  H01L33/20 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/245 ,  H01L2924/0549 ,  H01L2924/12041 ,  H01L2933/0066

摘要： A display device includes a base substrate including a display area and a circuit area; a planarization layer disposed on the base substrate; a plurality of debossing grooves defined in the planarization layer and disposed on the display area of the base substrate; at least one light-emitting element aligned with and received in each of the debossing grooves, wherein the light-emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first electrode contacting the first semiconductor layer; a second electrode line contacting the second semiconductor layer of the light-emitting element; and a first electrode line electrically connected to the first electrode.