Scanning electron microscope and method of controlling same
    41.
    发明授权
    Scanning electron microscope and method of controlling same 有权
    扫描电子显微镜及其控制方法

    公开(公告)号:US07161149B2

    公开(公告)日:2007-01-09

    申请号:US10603433

    申请日:2003-06-25

    Abstract: A scanning electron microscope has an electron gun producing the electron beam, an objective lens for sharply focusing the beam onto the specimen, a tilting mechanism for tilting the specimen relative to the beam, and a power supply for applying the negative voltage to the specimen. This microscope further includes a cylindrical shield electrode mounted to surround the electron beam path between the objective lens and specimen. A front-end electrode is insulatively mounted to the front-end portion of the shield electrode that is on the specimen side. An electric potential substantially identical to the electric potential at the polepieces of the objective lens is applied to the shield electrode. An electric potential substantially identical to the potential at the specimen is applied to the front-end electrode.

    Abstract translation: 扫描电子显微镜具有产生电子束的电子枪,用于将光束聚焦到样本上的物镜,用于使样本相对于光束倾斜的倾斜机构,以及向样本施加负电压的电源。 该显微镜还包括安装成围绕物镜和样品之间的电子束路径的圆柱形屏蔽电极。 前端电极被绝缘地安装在屏蔽电极的在试样侧的前端部分。 将与物镜的极点处的电位基本相同的电位施加到屏蔽电极。 将与试样电位基本相同的电位施加到前端电极。

    Conical baffle for reducing charging drift in a particle beam system
    42.
    发明授权
    Conical baffle for reducing charging drift in a particle beam system 失效
    锥形挡板,用于减少粒子束系统中的充电漂移

    公开(公告)号:US5838006A

    公开(公告)日:1998-11-17

    申请号:US733673

    申请日:1996-10-17

    CPC classification number: H01J37/09 H01J2237/022 H01J2237/026

    Abstract: A conical shaped baffle aperture reduces beam position drift due to electrostatic charging of insulating contamination layers on beam tube walls of a charged particle beam system. The geometric cone angle, aperture size and apex location of the baffle with respect to the source of contamination and secondary radiation are selected so that the inner walls of the baffle and the beam itself are invisible from the source, and therefore remain free of the insulating contamination layers that would otherwise cause charging drift.

    Abstract translation: 圆锥形挡板孔径由于静电充电带电粒子束系统的梁管壁上的绝缘污染层而减少了射束位置漂移。 选择挡板相对于污染源和次级辐射的几何锥角,孔径尺寸和顶点位置,使得挡板的内壁和梁本身从源不可见,因此保持绝缘 否则会导致充电漂移的污染层。

    Confinement of secondary electrons in plasma ion processing
    43.
    发明授权
    Confinement of secondary electrons in plasma ion processing 失效
    等离子体离子处理中二次电子的限制

    公开(公告)号:US5498290A

    公开(公告)日:1996-03-12

    申请号:US113552

    申请日:1993-08-27

    CPC classification number: H01J37/32412 C23C14/48 H01J37/3233 H01J2237/026

    Abstract: A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.

    Abstract translation: 等离子体离子注入装置包括在其壁内接收物体的真空室。 该物体被支撑在与真空室的壁电绝缘的导电基底上。 导电外壳位于物体和真空室的壁之间,并被支撑在基座上。 外壳由导电材料制成。 等离子体源被定位成在待植入物体附近产生等离子体。 电压源将电压施加到基座,并且从而将外壳相对于真空室的壁施加电压。 在植入期间从物体发射的二次电子被外壳反射回等离子体,减少X射线产生并提高等离子体效率。

    BLANKING APERTURE ARRAY SYSTEM AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20240029999A1

    公开(公告)日:2024-01-25

    申请号:US18343128

    申请日:2023-06-28

    Abstract: In one embodiment, a blanking aperture array system includes a blanking aperture array substrate including a plurality of beam passage holes through which beams in a multi charged particle beam pass and being provided with blankers to perform blanking deflection on the beams, and an X-ray shield disposed upstream of the blanking aperture array substrate. A cell section including the beam passage holes and the blankers is provided in a central portion of the blanking aperture array substrate, and a circuit section applying a voltage to each of the blankers is disposed in a periphery of the cell section. The circuit section is disposed such that a shortest distance between the circuit section and an outermost peripheral beam passage hole of the plurality of beam passage holes is greater than or equal to a distance based on an electron range in the blanking aperture array substrate.

    PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

    公开(公告)号:US20230335380A1

    公开(公告)日:2023-10-19

    申请号:US18044648

    申请日:2021-09-06

    Inventor: Takaaki KATO

    Abstract: A plasma processing apparatus generating plasma by electromagnetic waves supplied into a processing container to process a substrate, includes an upper electrode disposed in an upper portion of the processing container, a power supply member connected to the upper electrode to supply electromagnetic waves to the upper electrode, a first shield member and a second shield member configured to electrically shield the upper electrode and the power supply member, a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating inside thereof, and a conductive member covering a first end of the insulating member and electrically interconnecting the first shield member and the second shield member. The power supply member passes through an inner space in the insulating member and supplies electromagnetic waves to the upper electrode.

    Scanning electron microscope
    49.
    发明授权

    公开(公告)号:US10068746B2

    公开(公告)日:2018-09-04

    申请号:US15380366

    申请日:2016-12-15

    Inventor: Jeonghoi Koo

    Abstract: The present invention relates to a scanning electron microscope realized to observe a test sample by detecting back-scattered electrons scattered and emitted from a surface of the test sample in the air without a vacuum chamber which is allowed to observe the test sample in a vacuum state the scanning electron microscope can be useful in minimizing dispersion of electrons of the electron beam passing through the shielding film caused due to electron scattering by focusing the electron beam passing through the shielding film on a top surface of the first back-scattered electron detector disposed between the electron gun and the shielding film to pass an electron beam and configured to detect back-scattered electrons scattered from the test sample since the first back-scattered electron detector is provided with the first planar coil having a magnetic field formed thereon.

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