公开(公告)号：US5254215A

公开(公告)日：1993-10-19

申请号：US792221

申请日：1991-11-12

申请人： Shingo Terakado ,  Osamu Kitamura

发明人： Shingo Terakado ,  Osamu Kitamura

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32339 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A dry etching method capable of performing fine patterning. A sample substrate is fixedly disposed on a table in a reactant chamber. Gas plasma produced by a gas plasma generator is introduced into the reactant chamber, and excitation light, that is, light capable of exciting inner shell electrons of constituent atoms of the substrate, is irradiated onto the substrate from above the substrate. In the optical path of the excitation light is disposed a mask. The substrate is irradiated with the light in response to a pattern designated by the mask. The excitation light has an energy for exciting electrons of constituent atoms of the substrate. Upon arrival of the light in etched regions, the electrons of the substrate are excited. As a result, etching is effected by the contact of the excited electrons with the gas plasma, and the rate of this etching is greatly enhanced. Since the electrons of the substrate in masked areas are not excited, the masked areas become hardly subjected to etching by the contact of the gas plasma, whereby the pattern of the mask is transferred to the substrate with high accuracy, whereby fine patterns are formed.

摘要翻译： 能够进行精细图案化的干蚀刻方法。 样品基板固定地设置在反应物室中的工作台上。 由气体等离子体发生器产生的气体等离子体被引入到反应物室中，激发光（即，能够激发衬底的组成原子的内壳电子的光）从衬底上方照射到衬底上。 在激发光的光路中设置掩模。 响应于由掩模指定的图案，用光照射基板。 激发光具有用于激发基板的组成原子的电子的能量。 当光在蚀刻区域到达时，衬底的电子被激发。 结果，通过激发的电子与气体等离子体的接触来实现蚀刻，并且该蚀刻的速率被大大增强。 由于掩模区域中的基板的电子不被激发，所以掩模区域难以通过气体等离子体的接触进行蚀刻，由此掩模的图案以高精度传递到基板，从而形成精细的图案。

公开(公告)号：US4838990A

公开(公告)日：1989-06-13

申请号：US74450

申请日：1987-07-16

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  John I. Jones

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  John I. Jones

IPC分类号： C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/677

CPC分类号： H01L21/67748 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32339 ,  H01J37/32743 ,  H01J37/32788 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67751 ,  H01J2237/022 ,  H01J2237/184 ,  H01J2237/3345

摘要： A process wherein a thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a fluorosilane (e.g. SiF.sub.4), plus a bromine source (such as HBr), plus a weak oxygen source such as carbon monoxide. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.

摘要翻译： 通过使用包括氟源（例如SF 6）加氟硅烷（例如SiF 4），加溴源（例如HBr）的原料气体混合物，在等离子体轰击条件下各向异性地蚀刻薄膜金属（例如钨） ），加上弱氧源如一氧化碳。 该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。

公开(公告)号：US4808553A

公开(公告)日：1989-02-28

申请号：US118894

申请日：1987-11-10

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/203

CPC分类号： H01L21/67173 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32018 ,  H01J37/32339 ,  H01J37/32678 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67207 ,  H01J2237/3321 ,  Y10S438/931 ,  Y10S438/935

摘要： An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.

公开(公告)号：US20240162011A1

公开(公告)日：2024-05-16

申请号：US17987679

申请日：2022-11-15

申请人： Applied Materials, Inc.

发明人： Eric Kihara SHONO ,  Vladimir NAGORNY ,  Rene GEORGE ,  Vilen K. NESTOROV ,  Martin John RIPLEY ,  Christopher S. OLSEN

IPC分类号： H01J37/32

CPC分类号： H01J37/32357 ,  H01J37/32339 ,  H01J37/3244

摘要： Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

公开(公告)号：US20190244794A1

公开(公告)日：2019-08-08

申请号：US16389434

申请日：2019-04-19

申请人： TOKYO ELECTRON LIMITED

发明人： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC分类号： H01J37/32669 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3266

摘要： Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

公开(公告)号：US20190189394A1

公开(公告)日：2019-06-20

申请号：US16210004

申请日：2018-12-05

申请人： The Swatch Group Research and Development Ltd

发明人： Csilla Miko ,  Pierry Vuille ,  Jean-Luc Bazin ,  Arne Kool ,  Alexis Boulmay

IPC分类号： H01J37/317 ,  H01J37/08 ,  H01J37/32 ,  H01J37/18

CPC分类号： H01J37/3171 ,  C23C14/48 ,  G04B39/006 ,  G04D3/0074 ,  H01J37/08 ,  H01J37/18 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32678 ,  H01J37/32697

摘要： A method for the implantation of mono- or multi-charged ions on a surface of an object to be treated placed in a vacuum chamber, wherein this method includes the step that consist simultaneously of: injecting into the vacuum chamber a beam of ions produced by a source of ions and directing this beam of ions towards the surface of the object to be treated, and illuminating the surface of the object to be treated with a source of ultraviolet radiation producing ultraviolet radiation that propagates in the vacuum chamber. An ion implantation installation for implementing the implantation method.

公开(公告)号：US10026591B2

公开(公告)日：2018-07-17

申请号：US15648584

申请日：2017-07-13

申请人： CANON ANELVA CORPORATION

发明人： Yoshimitsu Kodaira ,  Yukito Nakagawa ,  Motozo Kurita

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/66 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3213

CPC分类号： H01J37/321 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32136 ,  H01L22/12 ,  H01L22/20 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833

摘要： An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.

公开(公告)号：US20170278761A1

公开(公告)日：2017-09-28

申请号：US15466520

申请日：2017-03-22

申请人： Tokyo Electron Limited

发明人： Anton J. deVilliers

IPC分类号： H01L21/66 ,  C23C16/50 ,  H01L21/3065 ,  C23C16/46 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458

CPC分类号： H01L22/26 ,  C23C16/047 ,  C23C16/46 ,  C23C16/481 ,  C23C16/511 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

摘要： Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

公开(公告)号：US09734989B2

公开(公告)日：2017-08-15

申请号：US14440110

申请日：2013-09-03

申请人： CANON ANELVA CORPORATION

发明人： Yoshimitsu Kodaira ,  Yukito Nakagawa ,  Motozo Kurita

IPC分类号： H01L21/00 ,  H01J37/32 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/66 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01J37/321 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32136 ,  H01L22/12 ,  H01L22/20 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833

摘要： A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step.By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.

公开(公告)号：US09640369B2

公开(公告)日：2017-05-02

申请号：US13202828

申请日：2010-02-24

申请人： Haydn N. G. Wadley ,  Goesta Mattausch ,  Henry Morgner ,  Frank-Holm Roegner

发明人： Haydn N. G. Wadley ,  Goesta Mattausch ,  Henry Morgner ,  Frank-Holm Roegner

IPC分类号： C23C16/00 ,  H01J37/32 ,  C23C14/22 ,  C23C14/24 ,  C23C14/30 ,  C23C14/32 ,  H01J37/305 ,  H01J37/34

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.