Ion extraction assembly having variable electrode thickness for beam uniformity control

    公开(公告)号:US12125680B2

    公开(公告)日:2024-10-22

    申请号:US17512310

    申请日:2021-10-27

    IPC分类号: H01J37/32

    CPC分类号: H01J37/32339 H01J2237/083

    摘要: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.

    SUBSTRATE TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND PLASMA GENERATING UNIT

    公开(公告)号:US20190051498A1

    公开(公告)日:2019-02-14

    申请号:US15682858

    申请日:2017-08-22

    申请人: PSK INC.

    发明人: Aram KIM

    IPC分类号: H01J37/32

    摘要: Disclosed are a substrate treating apparatus, a substrate treating method, and a plasma generating unit. The substrate treating apparatus includes a housing configured to provide a treatment space, in which a substrate is treated, a support unit configured to support a substrate in the treatment space, a plasma generating unit disposed outside the housing and configured to excite plasma from a gas and supply the excited plasma to the treatment space, and a controller, wherein the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through an electric wire, a second antenna wound around the plasma generating chamber and connected to the power source through an auxiliary electric wire, and a switch configured to switch on and off the auxiliary electric wire.

    PLASMA GENERATION APPARATUS
    7.
    发明申请
    PLASMA GENERATION APPARATUS 有权
    等离子体发生装置

    公开(公告)号:US20170062183A1

    公开(公告)日:2017-03-02

    申请号:US15247517

    申请日:2016-08-25

    IPC分类号: H01J37/32

    摘要: An inductive-coupling plasma generator includes an electroconductive chamber with a toroidal-shaped electrical discharge space formed inside. The plasma generator also includes a high-frequency power source connected to the chamber. The power source is configured to cause a high-frequency current to flow through the chamber along a toroidal direction.

    摘要翻译: 电感耦合等离子体发生器包括在内部形成有环形放电空间的导电室。 等离子体发生器还包括连接到腔室的高频电源。 电源被配置为使得高频电流沿着环形方向流过腔室。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE 有权
    用于制造半导体器件,离子束蚀刻器件和控制器件的方法

    公开(公告)号:US20150318185A1

    公开(公告)日:2015-11-05

    申请号:US14440110

    申请日:2013-09-03

    摘要: A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step.By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.

    摘要翻译: 在CMP步骤之后的基板平面中存在膜厚度分布。 该膜厚分布导致例如金属栅极的栅极阈值电压的变化,并导致元件特性的变化。 本发明的目的是容易地改善通过该CMP步骤处理的膜厚度分布。 通过在CMP步骤之后使用离子束蚀刻方法,校正衬底111的平面中的膜厚分布。 更具体地,当进行离子束蚀刻时,等离子体产生室102中的等离子体密度在面向基板111的平面中的中心部分的位置和面向外周部分的位置之间变得不同,从而 使基板111的平面的中央部的蚀刻速度和基板面111的外周部的蚀刻速度不同。

    Open Plasma Lamp for Forming a Light-Sustained Plasma
    9.
    发明申请
    Open Plasma Lamp for Forming a Light-Sustained Plasma 有权
    开放式等离子灯形成轻维持等离子体

    公开(公告)号:US20150279628A1

    公开(公告)日:2015-10-01

    申请号:US14670210

    申请日:2015-03-26

    IPC分类号: H01J37/32

    摘要: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

    摘要翻译: 开放式等离子体灯包括空腔部分。 空腔部分的气体输入和气体输出被布置成使气体流过空腔部分。 等离子体灯还包括气体供应组件,其流体地耦合到空腔部分的气体输入并且被配置为将气体供应到空腔部分的内部容积。 等离子体灯还包括流体耦合到空腔部分的气体输出的喷嘴组件。 喷嘴组件和空腔部分布置成使得一定体积的气体从泵浦源接收泵送照明,其中持续等离子体发射宽带辐射。 喷嘴组件被配置成建立从空腔部分内到空腔部分外部的区域的对流气流,使得通过气流将一部分持续等离子体从空腔部分移除。

    METHOD AND DEVICE FOR PERMANENT BONDING OF WAFERS
    10.
    发明申请
    METHOD AND DEVICE FOR PERMANENT BONDING OF WAFERS 审中-公开
    用于永久粘结的方法和装置

    公开(公告)号:US20150165752A1

    公开(公告)日:2015-06-18

    申请号:US14414795

    申请日:2012-07-24

    IPC分类号: B32B38/10 B32B37/00 H01J37/32

    摘要: A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate, the second substrate having a least one reaction layer, and a device for carrying out said method. The method comprises: (a) accommodating the substrates between a first electrode and a second electrode, or within a coil, (b) formation of a reservoir on the first contact area by exposing the first contact area to a plasma (c) at least partially filling of the reservoir with a first educt or a first group of educts, (d) contacting the first contact area with the second contact area for formation of a pre-bond interconnection, (e) forming a permanent bond between the first and second contact areas at least partially strengthened by the reaction of the first educt with a second educt which is contained in the reaction layer of the second substrate.

    摘要翻译: 一种用于将第一基板的第一接触区域与第二基板的第二接触区域接合的方法,所述第二基板具有至少一个反应层,以及用于执行所述方法的设备。 该方法包括:(a)在第一电极和第二电极之间或线圈内容纳衬底,(b)通过将第一接触区域暴露于等离子体(c)至少形成第一接触区域上的储存器 (d)使第一接触区域与第二接触区域接触以形成预接合互连,(e)在第一和第二组之间形成永久性接合 接触区域通过第一离子束与第二离子束的反应至少部分地被增强,第二离子束包含在第二基底的反应层中。