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10 条记录 (耗时 0.026 秒)

    Isolation substrate ring for plasma reactor
    1.
    发明授权
    Isolation substrate ring for plasma reactor 失效
    用于等离子体反应器的隔离衬底环

    公开(公告)号：US4891087A

    公开(公告)日：1990-01-02

    申请号：US67055

    申请日：1987-06-25

    申请人： Cecil J. Davis ,  John E. Spencer ,  Thomas D. Bonifield ,  Rhett B. Jucha ,  William J. Stiltz ,  Randall E. Johnson ,  Joseph E. Whetsel ,  John I. Jones

    发明人： Cecil J. Davis ,  John E. Spencer ,  Thomas D. Bonifield ,  Rhett B. Jucha ,  William J. Stiltz ,  Randall E. Johnson ,  Joseph E. Whetsel ,  John I. Jones

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32623 ,  H01J37/32532 ,  H01J37/32642 ,  H01J37/32743 ,  Y10S156/915

    摘要： A radio frequency (RF) glow discharge plasma etch electrode design is disclosed which is capable of creating high power density plasma with uniform etch rates, while providing access for automatic loading semiconductor wafers from outside of the plasma region. The electrode assembly comprises of an electrode to which RF energy is applied surrounded by an insulator, which in turn surrounded a grounded surface all of which have cylindrical symmetry. When placed a small distance from a flat, grounded substrate, the electrode assembly creates a volume which can effectively combine a high power density plasma, while maintaining a sufficient channel for pumping a gas flow and for observing the plasma optically. The same channel is widened for automatic transport of semiconductor wafers from outside of the plasma reactor chamber. Such confined high power density plasma are important for high rate, uniform, anisotropic etching, especially for silicon dioxide.

    摘要翻译： 公开了射频（RF）辉光放电等离子体蚀刻电极设计，其能够产生具有均匀蚀刻速率的高功率密度等离子体，同时提供从等离子体区域外部自动加载半导体晶片的通路。 电极组件包括由绝缘体围绕的RF能量施加的电极，该电极又包围着所有这些具有圆柱对称的接地表面。 当从平坦接地的基板放置一小段距离时，电极组件产生能够有效地组合高功率密度等离子体的体积，同时保持用于泵送气流和用于观察等离子体的足够通道。 相同的通道被加宽以用于从等离子体反应器室的外部自动输送半导体晶片。 这种受限制的高功率密度等离子体对于高速率，均匀的各向异性蚀刻，特别是二氧化硅是重要的。

    Method for etching tungsten
    2.
    发明授权
    Method for etching tungsten 失效
    蚀刻钨的方法

    公开(公告)号：US4849067A

    公开(公告)日：1989-07-18

    申请号：US74411

    申请日：1987-07-16

    申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Duane E. Carter ,  Sue E. Crank ,  John I. Jones

    发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Duane E. Carter ,  Sue E. Crank ,  John I. Jones

    IPC分类号： C23F4/00 ,  H01L21/3213

    CPC分类号： C23F4/00 ,  H01L21/32136

    摘要： A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet completed, to maintain the balance of chemistries which provides selectivity and anisotropy. In a tungsten etch, WF.sub.6 is usefully added during the post etch period to provide this loading.

    摘要翻译： 一种氟基金属蚀刻化学，其中在后蚀刻阶段，即在通过过蚀刻部分清除图案尚未完成的阶段期间添加蚀刻产物（或与蚀刻产物密切相关的物质）的混合物，至 维持提供选择性和各向异性的化学物质的平衡。 在钨蚀刻中，在后蚀刻期间有用地加入WF6以提供该负载。

    Processing apparatus
    5.
    发明授权
    Processing apparatus 失效
    处理装置

    公开(公告)号：US4872938A

    公开(公告)日：1989-10-10

    申请号：US188128

    申请日：1988-04-25

    申请人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    发明人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    IPC分类号： H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/67115 ,  H01L21/67751 ,  H01L21/67796

    摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.

    摘要翻译： 一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后， 可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。 在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。 另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。 当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。