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    Echange coupling film and magnetoresistive element using the same
    22.
    发明申请
    Echange coupling film and magnetoresistive element using the same 有权
    交换耦合膜和使用其的磁阻元件

    公开(公告)号：US20020008947A1

    公开(公告)日：2002-01-24

    申请号：US09901438

    申请日：2001-07-09

    Applicant: Alps Elecrtic Co., Ltd.

    Inventor： Naoya Hasegawa ,  Masamichi Saito

    IPC: G11B005/39

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12826 ,  Y10T428/12854 ,  Y10T428/265 ,  Y10T428/32

    Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

    Abstract translation: 提供了包括与反铁磁层接触的反铁磁层和铁磁层以产生交换耦合磁场的交换耦合膜。 使用PtMn合金作为反铁磁层的材料。 反铁磁性层和铁磁性层平行于界面优先取向的晶面是晶体学上相同的，位于这些晶面的晶体学相同的轴至少部分地在反铁磁层和铁磁层之间的不同方向上取向。 因此，作为热处理的结果，在反铁磁性层中发生适当的顺序变换，并且可以获得增加的交换耦合磁场。

    Low noise magnetic head for high frequency recording
    25.
    发明授权
    Low noise magnetic head for high frequency recording 失效
    低噪音磁头用于高频录音

    公开(公告)号：US5792547A

    公开(公告)日：1998-08-11

    申请号：US607130

    申请日：1996-02-26

    Applicant: Francis H. Liu ,  Minshen Tan ,  Hua-Ching Tong

    Inventor： Francis H. Liu ,  Minshen Tan ,  Hua-Ching Tong

    IPC: G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127

    CPC classification number: B82Y25/00 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3925 ,  H01F10/3218 ,  G11B5/3163 ,  Y10S428/90 ,  Y10T428/1186 ,  Y10T428/24942

    Abstract: A laminated pole structure for use in a low noise magnetic head suitable for high frequency signal operation is formed by interleaving a plurality of ferromagnetic layers and electrically insulating antiferromagnetic layers so as to form interface surfaces therebetween. External magnetic fields are applied as the interface surfaces are being formed for establishing exchange anisotropies with predetermined permanent exchange pinning directions in the ferromagnetic layers. The exchange anisotropies may be in the same or opposite directions, as defined by the external magnetic fields. In one embodiment, the pole structure has an open edge lamination, while in another embodiment the pole structure has a closed edge lamination. In still another embodiment, the antiferromagnetic layers include predetermined patterns of nonmagnetic material.

    Abstract translation: 用于适用于高频信号操作的低噪声磁头中的层叠极结构是通过交错多个铁磁层和电绝缘反铁磁层形成的，以便在它们之间形成界面。 当形成界面表面以在铁磁层中建立具有预定永久交换钉扎方向的交换各向异性时，施加外部磁场。 交换各向异性可以是与外部磁场所定义的相同或相反的方向。 在一个实施例中，极结构具有开口边缘层叠，而在另一实施例中，极结构具有封闭边缘层叠。 在另一个实施例中，反铁磁层包括非磁性材料的预定图案。

    Magnetoresistive head
    26.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号：US5691864A

    公开(公告)日：1997-11-25

    申请号：US674942

    申请日：1996-07-03

    Applicant: Masamichi Saito

    Inventor： Masamichi Saito

    IPC: G11B5/39 ,  H01F10/32 ,  H01L43/08

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3218 ,  G11B2005/3996

    Abstract: As an antiferromagnetic layer achieving exchange anisotropic coupling with a ferromagnetic layer, any Mn alloy of Ru-Mn, Rh-Mn, Ir-Mn, Pd-Mn, and Pt-Mn alloys is used. The content of each element is 10 to 45 atomic % for Ru, 10 to 40 atomic % for Rh, 10 to 40 atomic % for Ir, 10 to 25 atomic % for Pd, and 10 to 25 atomic % for Pt, respectively. Since the alloy exhibits excellent corrosion resistance and exchange anisotropic magnetic field in spite of its irregular crystal structure, no high temperature treatment is required in order to achieve a change in the crystal structure. The alloy is durable to high temperature due to a decreased change in the exchange anisotropic magnetic field.

    Abstract translation: 作为与铁磁层进行交换各向异性耦合的反铁磁层，使用Ru-Mn，Rh-Mn，Ir-Mn，Pd-Mn和Pt-Mn合金的任何Mn合金。 Ru的各元素含量为10〜45原子％，Rh为10〜40原子％，Ir为10〜40原子％，Pd为10〜25原子％，Pt为10〜25原子％。 由于合金表现出优异的耐腐蚀性和交换各向异性磁场，尽管其不规则的晶体结构，为了实现晶体结构的变化，不需要高温处理。 由于交换各向异性磁场的变化减小，合金耐高温。

    No-field, low power FeMn deposition giving high exchange films
    27.
    发明授权
    No-field, low power FeMn deposition giving high exchange films 失效
    无场，低功率FeMn沉积给予高交换膜

    公开(公告)号：US5666247A

    公开(公告)日：1997-09-09

    申请号：US437646

    申请日：1995-05-09

    Applicant: Allan E. Schultz

    Inventor： Allan E. Schultz

    IPC: C23C14/34 ,  G11B5/39 ,  H01F10/32

    CPC classification number: B82Y25/00 ,  G11B5/399 ,  H01F10/3218 ,  G11B5/3932

    Abstract: A method of producing a magnetoresistive read transducer with improved longitudinal bias due to high exchange coupling is disclosed. A layer of antiferromagnetic material is sputtered deposited onto a layer of ferromagnetic material in the absence of a magnetic field and at a power density below 0.7 W/cm.sup.2. The layers of ferromagnetic material and antiferromagnetic material are annealed at a low temperature of between 200.degree. C. and 250.degree. C. for between 6 and 26 hours.

    Abstract translation: 公开了一种由于高交换耦合而产生具有改进的纵向偏置的磁阻读取传感器的方法。 在不存在磁场和功率密度低于0.7W / cm 2的情况下溅射沉积在铁磁材料层上的一层反铁磁性材料。 铁磁材料和反铁磁性材料层在200〜250℃的低温下退火6〜26小时。

    Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers
    29.
    发明授权
    Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers 失效
    形成具有铁磁性和反铁磁性层的薄膜磁性结构的方法

    公开(公告)号：US5612098A

    公开(公告)日：1997-03-18

    申请号：US696656

    申请日：1996-08-14

    Applicant: Minshen Tan ,  Hua-Ching Tong ,  Francis H. Liu ,  Swie-In Tan

    Inventor： Minshen Tan ,  Hua-Ching Tong ,  Francis H. Liu ,  Swie-In Tan

    IPC: C23C14/35 ,  G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  C23C14/08

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  C23C14/351 ,  G01R33/093 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3948 ,  H01F10/3218 ,  H01F10/3254 ,  H01F41/302 ,  Y10T428/265

    Abstract: A method of forming a magnetic structure having layers with different magnetization orientations provided by a common magnetic bias layer includes the steps of depositing an antiferromagnetic layer between first and second ferromagnetic layers. During the deposition of the first and second ferromagnetic layers, magnetization fields of different orientations are employed separately to induce different directions of magnetization in the first and second layers. The different directions of magnetization in the first and second layers are sustained, through the process of exchange coupling, by the interposed antiferromagnetic layer which serves as the bias layer. A magnetic structure thus fabricated, can be used as a read transducer capable of generating differential signals with common mode noise rejection, and can be used as a magnetic pole for a magnetic head with reduced Barkhausen noise.

    Abstract translation: 形成具有由公共偏磁层提供的具有不同磁化取向的层的磁性结构的方法包括以下步骤：在第一和第二铁磁层之间沉积反铁磁性层。 在沉积第一和第二铁磁层期间，分别采用不同取向的磁化场以在第一和第二层中引起不同的磁化方向。 通过交换耦合的过程，通过用作偏置层的插入的反铁磁层来维持第一和第二层中不同的磁化方向。 如此制造的磁结构可以用作能够产生具有共模噪声抑制的差分信号的读取传感器，并且可以用作具有降低的巴克豪森噪声的磁头的磁极。

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