Thermally assisted magnetic recording media and magnetic recording and reproducing apparatus
    1.
    发明授权
    Thermally assisted magnetic recording media and magnetic recording and reproducing apparatus 有权
    热辅助磁记录介质和磁记录和再现设备

    公开(公告)号:US08084149B2

    公开(公告)日:2011-12-27

    申请号:US11493233

    申请日:2006-07-25

    Applicant: Susumu Soeya

    Inventor: Susumu Soeya

    CPC classification number: G11B5/66

    Abstract: Embodiments of the invention provide a thermally assisted magnetic recording medium, which can overcome resistance against thermal fluctuation at RT and write capability, obtain a drastic temperature variation in coercive force at right below the recording temperature, and be formed at low temperature. In one embodiment, the medium has a layered structure formed of a lower high-KF ferromagnetic (F) layer formed on a substrate, satisfying TW

    Abstract translation: 本发明的实施例提供了一种热辅助磁记录介质,其能够克服对RT下的热波动的阻力和写入能力,在低于记录温度下获得矫顽力的剧烈温度变化,并且在低温下形成。 在一个实施例中,介质具有由形成在基板上的下部高KF铁磁性(F)层形成的分层结构,满足TW

    Magneto-resistive devices
    4.
    发明授权
    Magneto-resistive devices 失效
    磁阻器件

    公开(公告)号:US06917088B2

    公开(公告)日:2005-07-12

    申请号:US10331664

    申请日:2002-12-31

    CPC classification number: G11B5/3903 H01L27/228 H01L43/08 H01L43/10

    Abstract: A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

    Abstract translation: 磁阻装置具有高的再现输出,并且适合用作CPP-GMR装置。 磁阻装置具有形成在第一和第二磁性层之间的第一磁性层,第二磁性层和非磁性间隔物。 第一磁性层包含导电电子属于第一能带的磁性材料,第二磁性层含有导电电子属于第二能带的磁性材料。 第一和第二能带可归因于相同轨道,从而增加磁阻变化率和调整电阻。

    Magnetic storage/read system with read head including magnetoresistive
element
    6.
    发明授权
    Magnetic storage/read system with read head including magnetoresistive element 失效
    具有读磁头的磁存储/读取系统,包括磁阻元件

    公开(公告)号:US5933297A

    公开(公告)日:1999-08-03

    申请号:US45189

    申请日:1993-04-13

    Abstract: A magnetic storage/read system includes a recording medium for magnetically storing a signal and a magnetoresistive element which is driven relative to the recording medium. The magnetoresistive element may include a substrate, a first antiferromagnetic film, a first ferromagnetic film, a first nonmagnetic film, a soft magnetic film, a second nonmagnetic film, a second ferromagnetic film, and a second antiferromagnetic film, wherein the films are sequentially layered directly on the substrate with no intervening layer between any of the films. At least one of the first antiferromagnetic film and the second antiferromagnetic film may be made of nickel oxide. The first ferromagnetic film and the second ferromagnetic film have a first magnetization which is fixed in a predetermined direction, and the soft magnetic film has a second magnetization which is rotatable in response to a magnetic field from the recording medium such that an angle between a direction of the second magnetization and the predetermined direction in which the first magnetization is fixed varies in response to the magnetic field from the recording medium, thereby producing a magnetoresistive effect.

    Abstract translation: 磁存储/读取系统包括用于磁存储信号的记录介质和相对于记录介质驱动的磁阻元件。 磁阻元件可以包括基板,第一反铁磁膜,第一铁磁膜,第一非磁性膜,软磁膜,第二非磁性膜,第二铁磁膜和第二反铁磁膜,其中膜依次层叠 直接在衬底上,在任何膜之间没有中间层。 第一反铁磁膜和第二反铁磁膜中的至少一个可以由氧化镍制成。 第一铁磁膜和第二铁磁膜具有沿预定方向固定的第一磁化,并且软磁膜具有可响应于来自记录介质的磁场而旋转的第二磁化,使得在方向 第二磁化和第一磁化固定的预定方向响应于来自记录介质的磁场而变化,由此产生磁阻效应。

    Magnetoresistive sensor including magnetic domain control layers having high electric resistivity
    8.
    发明授权
    Magnetoresistive sensor including magnetic domain control layers having high electric resistivity 失效
    磁阻传感器包括具有高电阻率的磁畴控制层

    公开(公告)号:US06870718B2

    公开(公告)日:2005-03-22

    申请号:US09811606

    申请日:2001-03-20

    Abstract: A magnetoresistive sensor of the type of flowing a signal sensing current perpendicular to the plane to improve resolution at reproducing a signal, a magnetic head using the magnetoresistive sensor, and a magnetic disk apparatus. A magnetoresistive sensor comprising a substrate, a pair of magnetic shield layers consisting of a lower magnetic shield layer and an upper magnetic shield layer, a magnetoresistive sensor layer, disposed between the pair of magnetic shield layers, an electrode terminal for flowing a signal current perpendicular to the plane of the magnetoresistive sensor layer, and magnetic domain control layers for controlling Barkhausen noise of the magnetoresistive sensor layer, wherein the magnetic domain control layers disposed in contact with opposite ends of the magnetoresistive sensor layer consist of a material having high electric resistivity and with a specific resistance not less than 10 mΩcm so as to give the magnetoresistive sensor having excellent reproducing resolution.

    Abstract translation: 一种磁阻传感器,其类型是使垂直于该平面的信号感应电流流动,以改善再现信号时的分辨率,使用磁阻传感器的磁头和磁盘装置。 一种磁阻传感器,包括基板,由下磁屏蔽层和上磁屏蔽层组成的一对磁屏蔽层,设置在一对磁屏蔽层之间的磁阻传感器层,用于垂直于信号电流流动的电极端子 磁阻传感器层的平面和用于控制磁阻传感器层的巴克豪森噪声的磁畴控制层,其中与磁阻传感器层的相对端接触设置的磁畴控制层由具有高电阻率的材料组成, 具有不小于10mOggacm的电阻率,以使具有优异再现分辨率的磁阻传感器。

    Magnetoresistive element
    10.
    发明授权
    Magnetoresistive element 失效
    磁阻元件

    公开(公告)号:US06633465B2

    公开(公告)日:2003-10-14

    申请号:US09840869

    申请日:2001-04-25

    Abstract: A magnetoresistive element includes a first antiferromagnetic film, a first magnetic film having a magnetization direction fixed by magnetic coupling with the first antiferromagnetic film, a second antiferromagnetic film, a second magnetic film having a magnetization direction fixed by magnetic coupling with the second antiferromagnetic film, a third magnetic film having a magnetization direction able to rotate in response to an applied magnetic field, a first nonmagnetic film disposed between the first magnetic film and the third magnetic film, and a second nonmagnetic film disposed between the second magnetic film and the third magnetic film. The third magnetic film is disposed between the first nonmagnetic film and the second nonmagnetic film, the first magnetic film is disposed between the first antiferromagnetic film and the first nonmagnetic film, and the second magnetic film is disposed between the second antiferromagnetic film and the second nonmagnetic film.

    Abstract translation: 磁阻元件包括第一反铁磁膜,具有通过与第一反铁磁膜的磁耦合固定的磁化方向的第一磁性膜,第二反铁磁膜,具有通过与第二反铁磁性膜耦合而固定的磁化方向的第二磁性膜, 具有响应于施加的磁场而能够旋转的磁化方向的第三磁性膜,设置在第一磁性膜和第三磁性膜之间的第一非磁性膜和设置在第二磁性膜和第三磁性膜之间的第二非磁性膜 电影。 第三磁性膜设置在第一非磁性膜和第二非磁性膜之间,第一磁性膜设置在第一反铁磁膜和第一非磁性膜之间,第二磁性膜设置在第二反铁磁膜和第二非磁性膜之间 电影。

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