公开(公告)号：US5665465A

公开(公告)日：1997-09-09

申请号：US554071

申请日：1995-11-06

Applicant: Ernst Michael Gyorgy, deceased ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover

Inventor： Ernst Michael Gyorgy, deceased ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover

IPC: H01F10/20 ,  H01F10/32 ,  H01F17/00 ,  G11B5/66 ,  B32B33/00

CPC classification number: B82Y25/00 ,  H01F10/3218 ,  H01F17/0006 ,  H01F2017/0046 ,  H01F2017/0066 ,  Y10S428/90 ,  Y10T428/1171 ,  Y10T428/256 ,  Y10T428/257

Abstract: Articles according to the invention exemplarily comprise a magnetically hard oxide layer in contact with a magnetically soft oxide layer, with spins in the latter at room temperature exchange-coupled to the (oriented) spins in the former. Exemplarily both materials are ferrimagnetic spinel-type oxides, e.g., CoFe.sub.2 O.sub.4 /(Mn, Zn)Fe.sub.2 O.sub.4. Material combinations according to the invention can be advantageously used in high frequency circuit components such as inductors, since the magnetically soft layer can be in a substantially single domain state even after exposure to a magnetic field of considerable strength, e.g., up to about 500 Oe.

Abstract translation: 根据本发明的制品示例性地包括与磁性软氧化物层接触的磁性硬氧化物层，其中后者中的自旋在室温下与前者中的（取向的）自旋交换耦合。 示例性地，两种材料是亚铁磁性尖晶石型氧化物，例如CoFe 2 O 4 /（Mn，Zn）Fe 2 O 4。 根据本发明的材料组合可以有利地用于诸如电感器的高频电路部件中，因为即使在暴露于相当强度的磁场（例如高达约500Oe）之外，磁软层也可处于基本上单一的畴状态 。