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    Method of making a superconductive oxide body
    1.
    发明授权
    Method of making a superconductive oxide body 失效
    制造超导氧化物体的方法

    公开(公告)号：US06291402B1

    公开(公告)日：2001-09-18

    申请号：US07426485

    申请日：1989-10-23

    Applicant: Sungho Jin ,  Richard Curry Sherwood ,  Thomas Henry Tiefel ,  Robert Bruce van Dover

    Inventor： Sungho Jin ,  Richard Curry Sherwood ,  Thomas Henry Tiefel ,  Robert Bruce van Dover

    IPC: B05D512

    CPC classification number: H01L39/143 ,  H01L39/126 ,  H01L39/2429 ,  H01L39/248

    Abstract: Some mechanical, electrical, and thermal properties of high Tc superconductors such as (Ba, Y) cuprates can be substantially improved by the dispersal of an appropriate metal in the superconductive body. For instance, mixing Ag particles with superconductive powder of nominal composition Ba2YCu3O7 and processing the mixture in the conventional manner can produce superconductive bodies having Tc of about 93 K and substantially greater fracture strength and normal state electrical and thermal conductivity than otherwise identical bodies that do not contain Ag particles.

    Abstract translation: 通过在超导体中分散适当的金属，可以显着提高高Tc超导体（如Ba，Y）铜酸盐的一些机械，电和热性能。 例如，将Ag颗粒与标称组成Ba2YCu3O7的超导粉末混合并以常规方式处理混合物可以产生具有大约93K的Tc的超导体，并且具有比其它不相同的相同体的断裂强度和正常状态的电和热导率更高的超导体 含有Ag颗粒。

    Article comprising an inductive element with a magnetic thin film
    3.
    发明授权
    Article comprising an inductive element with a magnetic thin film 失效
    该文章包括具有磁性薄膜的电感元件

    公开(公告)号：US5847634A

    公开(公告)日：1998-12-08

    申请号：US902686

    申请日：1997-07-30

    Applicant: Vladislav Korenivski ,  Robert Bruce van Dover

    Inventor： Vladislav Korenivski ,  Robert Bruce van Dover

    IPC: H01F10/14 ,  H01F10/12 ,  H01F10/13 ,  H01F17/00 ,  H01F17/04 ,  H01F30/00 ,  H01L21/822 ,  H01L27/04 ,  H01F5/00 ,  H01F17/06 ,  H01F27/24

    CPC classification number: H01F17/0006 ,  H01F17/04

    Abstract: A thin film inductive element according to this invention comprises an elongate conductor, and spaced apart magnetic strips that substantially surround the conductor, with dielectric material between the magnetic strips and the conductor. The inductive element can have relatively high inductance and low loss, can be used in linear form, meander on spiral form, or any other desired form, is suitable for use at RF frequencies, and can be integrated with conventional circuitry. Criteria for choosing the length of the magnetic strips and the thickness of the dielectric are disclosed.

    Abstract translation: 根据本发明的薄膜感应元件包括细长导体和基本上围绕导体的间隔开的磁条，其中电介质材料在磁条和导体之间。 电感元件可以具有相对较高的电感和低损耗，可以线性形式使用，螺旋形式上的曲折或任何其它所需形式，适用于RF频率，并可与常规电路集成。 公开了用于选择磁条的长度和电介质的厚度的标准。

    Dielectric materials of amorphous compositions and devices employing same
    6.
    发明授权
    Dielectric materials of amorphous compositions and devices employing same 失效
    无定形组合物的介电材料和采用其的器件

    公开(公告)号：US5912797A

    公开(公告)日：1999-06-15

    申请号：US936132

    申请日：1997-09-24

    Applicant: Lynn Frances Schneemeyer ,  Robert Bruce van Dover

    Inventor： Lynn Frances Schneemeyer ,  Robert Bruce van Dover

    IPC: H01G4/33 ,  H01B3/00 ,  H01B3/12 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01G4/06

    CPC classification number: H01L28/55 ,  H01L21/31691

    Abstract: A thin dielectric film that uses an amorphous composition of R--Sn--Ti--O as the main component is disclosed, wherein R is Zr or Hf, having particular application for use in a capacitor of a DRAM cell. The preferable range of the dielectric thin film composition is centered around Zr.sub.x Sn.sub.y Ti.sub.z O.sub.w, where 0.1.ltoreq.x.ltoreq.1.8; 0.1.ltoreq.y.ltoreq.1.6; 0.2.ltoreq.z.ltoreq.1.9; and 2.0.ltoreq.w.ltoreq.4.0; and x+y+z=2. Preferably, x is about 0.2, y is about 0.2, and z is about 0.6. Doping of the composition with nitrogen is further disclosed as improving the dielectric properties and uniformity of the film.

    Abstract translation: 公开了使用R-Sn-Ti-O的非晶质组合物作为主要成分的薄电介质膜，其中R是Zr或Hf，其特别适用于DRAM电池的电容器。 电介质薄膜组合物的优选范围以Zr x Sn y Ti z O w为中心，其中0.1≤x≤1.8; 0.1

    Device and method to measure the complex permeability of thin films at ultra-high frequencies
    7.
    发明授权
    Device and method to measure the complex permeability of thin films at ultra-high frequencies 失效
    测量超高频薄膜复合磁导率的装置和方法

    公开(公告)号：US5744972A

    公开(公告)日：1998-04-28

    申请号：US627638

    申请日：1996-04-05

    Applicant: Vladislav Korenivski ,  Zhengxiang Ma ,  Paul Matthew Mankiewich ,  Paul Anthony Polakos ,  Robert Bruce van Dover

    Inventor： Vladislav Korenivski ,  Zhengxiang Ma ,  Paul Matthew Mankiewich ,  Paul Anthony Polakos ,  Robert Bruce van Dover

    IPC: G01R33/12 ,  G01N27/72

    CPC classification number: G01R33/1223

    Abstract: The device has a single strip having a first end, a second end, a length and a width. The first end of the strip is curved toward the second end of the strip to form a loop having a height. The length is approximately 10 mm, the width is approximately 5-8 mm, and the height is approximately 0.8-1.2 mm. The loop is preferably fabricated from copper. The loop is mounted directly to a test instrument such as a computer controlled impedance analyzer or network analyzer. The test instrument measures the inductance and resistance of the loop with no thin film sample placed therein, and then measures the inductance and resistance of the loop containing the sample under test. From these measurements, the device ultimately derives the permeability of the sample under test. The method for measuring the complex permeability of thin films at ultra-high frequencies includes the steps of recording the residual inductance and resistance for the loop empty; measuring the total inductance and resistance for the loop loaded with the sample under test; determining the change in resistance by subtracting the resistance of the loop without any sample from the resistance when the loop is loaded with the sample under test; determining the change in inductance by subtracting the inductance of the loop without any sample from the inductance when the loop is loaded with the sample under test; and calculating permeability.

    Abstract translation: 该装置具有单条，其具有第一端，第二端，长度和宽度。 条带的第一端朝向带的第二端弯曲以形成具有高度的环。 长度约为10mm，宽度约为5-8mm，高度约为0.8-1.2mm。 该环优选由铜制成。 该回路直接安装在诸如计算机控制的阻抗分析仪或网络分析仪之类的测试仪器上。 测试仪器测量没有薄膜样品的环路的电感和电阻，然后测量包含被测试样品的回路的电感和电阻。 从这些测量中，该装置最终导出被测试样品的渗透性。 用于测量超高频薄膜复合磁导率的方法包括记录剩余电感和电阻为空的步骤; 测量负载待测试样品的环路的总电感和电阻; 当环路装载被测试样品时，通过从电阻中减去没有任何样品的环路的电阻来确定电阻的变化; 当环路加载被测试样品时，通过从电感中减去没有任何样本的环路的电感来确定电感的变化; 并计算渗透率。

    Planar magnetic frame inductors having open cores
    9.
    发明授权
    Planar magnetic frame inductors having open cores 有权
    具有开放磁芯的平面磁性框架电感器

    公开(公告)号：US06573818B1

    公开(公告)日：2003-06-03

    申请号：US09540618

    申请日：2000-03-31

    Applicant: Timothy J. Klemmer ,  Robert Bruce Van Dover ,  Kenneth Alexander Ellis ,  Ashraf Wagih Lotfi

    Inventor： Timothy J. Klemmer ,  Robert Bruce Van Dover ,  Kenneth Alexander Ellis ,  Ashraf Wagih Lotfi

    IPC: H01F2702

    CPC classification number: H01F17/0006 ,  H01F27/245 ,  H01F27/2804 ,  H01F2027/2819

    Abstract: The present invention is a planar spiral inductor a top magnetic layer a bottom magnetic layer; and a plurality of conductive coils disposed between said top magnetic layer and said bottom magnetic layer. A significant difference from prior art is that the top and bottom magnetic layers have their centers effectively cut out using lithographic techniques or other techniques to frame the core of the conductive spirals. An advantage of this structure over the prior art is that when magnetic anisotropies other than shape are kept small, then the magnetic configuration will produce a magnetostatic shape anisotropy such that the easy axis (low energy direction of magnetization) lies parallel to the legs of a rectangular frame or the circumference of a circular frame, as will be described. During operation of the inductor, the field produced by the coils flows in a radial direction and will be perpendicular to the easy axis direction thereby causing magnetization reversal to occur by rotation while advantageously utilizing the full structure in this mode.

    Abstract translation: 本发明是一种平面螺旋电感器，一个顶部磁性层，一个底部磁性层; 以及设置在所述顶部磁性层和所述底部磁性层之间的多个导电线圈。 与现有技术的显着差异在于，使用光刻技术或其他技术来使顶部和底部磁性层有效地切出它们的中心以构成导电螺旋的芯。 与现有技术相比，该结构的优点是当除形状之外的磁各向异性保持较小时，则磁性构型将产生静磁形状各向异性，使得容易轴（磁化强度的低能量方向）平行于 矩形框架或圆形框架的圆周，如将要描述的。 在电感器工作期间，由线圈产生的磁场在径向方向上流动并且将垂直于易轴方向，从而通过旋转而产生磁化反转，同时有利地利用该模式中的全部结构。

    Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same
    10.
    发明授权
    Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same 有权
    包含ZR-Ge-Ti-O或Hf-Ge-Ti-O的介电材料的制品及其制造方法

    公开(公告)号：US06437392B1

    公开(公告)日：2002-08-20

    申请号：US09456807

    申请日：1999-12-08

    Applicant: Lynn Frances Schneemeyer ,  Robert Bruce Van Dover

    Inventor： Lynn Frances Schneemeyer ,  Robert Bruce Van Dover

    IPC: H01L27108

    CPC classification number: H01L21/28194 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/1085 ,  H01L29/511 ,  H01L29/517

    Abstract: The invention relates to dielectric materials comprising films of R—Ge—Ti—O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx—Gey—Tiz—Ow where 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, and 1≧w≦2, and x+y+z≅1, and more preferably, where 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05, and x+y+z≅1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.

    Abstract translation: 本发明涉及包含R-Ge-Ti-O（其中R选自Zr和Hf）的膜的电介质材料及其制备方法。 介电材料优选具有式Rx-Gey-Tiz-Ow，其中0.05> = x <= 1,0.05> = y <= 1，0.1> = z <= 1，1> = w <= 2，x + y +z≅1，更优选地，其中0.15> = x <= 0.7,0.05> = y <= 0.3,0.25> = z <= 0.7和1.95> = w <= 2.05，并且x + y + z≅1。 本发明在包括动态随机存取存储器（DRAM）设备的电容器的硅芯片集成电路器件中特别有用。

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