公开(公告)号：US20040264066A1

公开(公告)日：2004-12-30

申请号：US10861472

申请日：2004-06-07

Applicant: TDK CORPORATION

Inventor： Tomoaki Shimizu ,  Koji Shimazawa ,  Kosuke Tanaka ,  Koichi Terunuma

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/0016

Abstract: At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to-point distances in the plane where each magnetic underlayer and the corresponding bias magnetic field applying layer are mated, are substantially equalized to each other. Therefore, a coercive force Hc in an in-plane direction (direction parallel to a film surface) of each bias magnetic field applying layer can be maintained at a high level so that even when further gap narrowing or track narrowing is aimed, the bias magnetic field applying layers can act to apply an effective bias magnetic field, i.e. can act to suppress occurrence of the Barkhausen noise.

公开(公告)号：US20040257720A1

公开(公告)日：2004-12-23

申请号：US10464161

申请日：2003-06-18

Inventor： Janice H. Nickel ,  Manish Sharma

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11C11/16

Abstract: A top-pinned magnetoresistive device includes a free ferromagnetic layer; a spacer layer on the free layer; and a pinned ferromagnetic layer on the spacer layer. At least one interface property at an upper surface of the pinned layer is adjusted during fabrication of the magnetoresistive device.

Abstract translation: 顶置磁阻器件包括自由铁磁层; 自由层上的间隔层; 以及在间隔层上的钉扎铁磁层。 在制造磁阻器件期间调整在被钉扎层的上表面处的至少一个界面特性。

公开(公告)号：US20040257718A1

公开(公告)日：2004-12-23

申请号：US10463993

申请日：2003-06-18

Inventor： Janice H. Nickel ,  Manish Sharma

IPC: G11B005/39 ,  G11C011/15

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetoresistive device includes a free ferromagnetic layer; a pinned structure; and a spacer layer between the free layer and the pinned structure. The pinned structure may include first, second and third ferromagnetic layers that are ferromagnetically coupled. The first and third layers are separated by the second layer. The second layer has a lower magnetic moment than the first and third layers. In the alternative, the pinned structure may include a single layer of Co50Fe50.

Abstract translation: 磁阻器件包括自由铁磁层; 固定结构 以及在自由层和钉扎结构之间的间隔层。 钉扎结构可以包括铁磁耦合的第一，第二和第三铁磁层。 第一和第三层由第二层隔开。 第二层具有比第一层和第三层更低的磁矩。 在替代方案中，钉扎结构可以包括单层Co50Fe50。

公开(公告)号：US20040257717A1

公开(公告)日：2004-12-23

申请号：US10463930

申请日：2003-06-18

Inventor： Manish Sharma ,  Janice H. Nickel

IPC: G11B005/39 ,  G11C011/15

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/08 ,  Y10T29/49034

Abstract: A coupled ferromagnetic structure includes a first ferromagnetic layer, a spacer layer on a first surface of the first ferromagnetic layer, and a second ferromagnetic layer on the spacer layer. Interlayer exchange coupling occurs between the first and second ferromagnetic layers. The coupling may be ferromagnetic or antiferromagnetic. Morphology of the first surface is modified to tailor the interlayer exchange coupling. The structure may form a part of a magnetoresistive device such as a magnetic tunnel junction.

Abstract translation: 耦合的铁磁结构包括第一铁磁层，第一铁磁层的第一表面上的间隔层和间隔层上的第二铁磁层。 层间交换耦合发生在第一和第二铁磁层之间。 耦合可以是铁磁性或反铁磁性的。 第一表面的形态被修改以定制层间交换耦合。 该结构可以形成诸如磁性隧道结的磁阻器件的一部分。

公开(公告)号：US20040257713A1

公开(公告)日：2004-12-23

申请号：US10464253

申请日：2003-06-17

Inventor： Mustafa Michael Pinarbasi

IPC: G11B005/39

CPC classification number: G11B5/3929 ,  G11B5/3932

Abstract: A lead overlay magnetoresistive sensor has leads with substantially vertical end walls to accentuate sense current near the ends of the leads. Insulating layers isolate the hard bias layers from the path of the sense current. A lead overlay magnetoresistive sensor does not exhibit significant trackwidth widening. A disk drive has a read element including a lead overlay magnetoresistive sensor with leads having substantially vertical end walls.

Abstract translation: 引线覆盖磁阻传感器具有基本上垂直的端壁的引线，以突出引线端部附近的感测电流。 绝缘层将硬偏压层与感测电流的路径隔离开来。 引线覆盖磁阻传感器不会显示明显的带宽加宽。 磁盘驱动器具有读取元件，其包括具有基本垂直端壁的引线的引线覆盖磁阻传感器。

公开(公告)号：US20040252414A1

公开(公告)日：2004-12-16

申请号：US10459820

申请日：2003-06-12

Applicant: Seagate Technology LLC

Inventor： Sining Mao ,  William P. Vavra ,  Eric S. Linville

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/0016

Abstract: A magnetoresistive (MR) sensor having reduced operating temperature is disclosed. The MR sensor, which includes an MR stack having a magnetoresistive layer, is configured to operate in a current-perpendicular-to-plane (CPP) mode wherein a sense current flows substantially perpendicular to a longitudinal plane of the magnetoresistive layer. The MR sensor further includes a thermal sink layer positioned with respect to the MR stack to reduce an operating temperature of the magnetoresistive sensor. The thermal sink layer is made of a material having high thermal conductivity, and is preferably separated from the MR stack by a metallic cap or seed layer.

Abstract translation: 公开了具有降低的工作温度的磁阻（MR）传感器。 包括具有磁阻层的MR堆叠的MR传感器被配置为以电流垂直于平面（CPP）模式工作，其中感测电流基本上垂直于磁阻层的纵向平面流动。 MR传感器还包括相对于MR堆叠定位的散热层，以降低磁阻传感器的工作温度。 散热层由具有高导热性的材料制成，并且优选地通过金属盖或种子层与MR堆叠分离。

公开(公告)号：US20040246632A1

公开(公告)日：2004-12-09

申请号：US10804564

申请日：2004-03-18

Applicant: Hitachi Global Storage Technologies Japan, Ltd.

Inventor： Koichi Nishioka ,  Satoshi Shigematsu

IPC: G11B005/39

CPC classification number: G11B5/3903 ,  B82Y10/00 ,  G11B2005/0008 ,  Y10T29/49034

Abstract: A magnetoresistive head in which a pinned layer comprises two films, i.e., a ferromagnetic film A and a ferromagnetic B anti-ferromagnetically coupled to each other and a anti-ferromagnetic coupling film for separating the two ferromagnetic films A and B, where the coercivity of the ferromagnetic film alone is 200 (Oe) or more and the coercivity of the ferromagnetic film alone is 20 (Oe) or less. The compositions for the ferromagnetic film A and the ferromagnetic film B, when expressed by Co100-YFeY (at %) are: ferromagnetic film A: 80nullYnull40, and ferromagnetic film B: 20nullYnull0, where the material for the film in contact with the ferromagnetic film A is Ru, Ta, NiFeCr, Cu or NiFe.

Abstract translation: 磁阻头，其中被钉扎层包括两个膜，即铁磁膜A和反铁磁性地彼此耦合的铁磁体B和用于分离两个铁磁膜A和B的反铁磁耦合膜，其中矫顽力 铁磁膜单独为200（Oe）以上，单独的铁磁膜的矫顽力为20（Oe）以下。 当Co100-YFeY（at％）表示时，铁磁膜A和铁磁性膜B的组成为：铁磁性膜A：80> = Y> = 40，铁磁性膜B：20> = Y> = 0， 其中与铁磁性膜A接触的膜的材料是Ru，Ta，NiFeCr，Cu或NiFe。

公开(公告)号：US20040223269A1

公开(公告)日：2004-11-11

申请号：US10856181

申请日：2004-05-28

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Po Kang Wang ,  Moris Dovek ,  Jibin Geng ,  Tai Min

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

Abstract translation: 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。

公开(公告)号：US20040218311A1

公开(公告)日：2004-11-04

申请号：US10642899

申请日：2003-08-18

Inventor： Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093

Abstract: A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose null values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.

Abstract translation: 第一自由磁性层，第二自由磁性层，下部被钉扎的磁性层和上部被钉扎的磁性层由适当设定的β值的磁性材料形成，使得所有磁性层的上部 - 自旋传导电子的电阻 当自由磁性层的磁化改变为具有最低电阻时，其变得低于用于向下自旋传导电子的电子。 磁性检测元件表现出每区域电阻的增加的变化。

公开(公告)号：US20040196595A1

公开(公告)日：2004-10-07

申请号：US10827080

申请日：2004-04-19

Inventor： Richard Joseph Gambino ,  Thomas Penney III ,  John Casimir Slonczewski

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B2005/3996 ,  Y10T29/49044

Abstract: A magnetic field sensor is described incorporating a plurality of magnetic stripes spaced apart on the surface of a substrate such that the stray magnetic fields at the ends of the magnetic stripes are magnetostatically coupled and the magnetic stripes are magnetized respectively in alternating directions, nonmagnetic conductive material positioned in the spaces between the magnetic stripes and electrodes for passing current crosswise through the plurality of magnetic stripes to detect a change in resistance by the giant magnetoresistive effect (MGR). The invention overcomes the problem of detecting low magnetic fields since the magnetic fields required to saturate magnetic stripes depends on the magnetostatic coupling which in turn can be controlled by the geometry and position of the magnetic stripes in the sensor.