Invention Application
- Patent Title: Echange coupling film and magnetoresistive element using the same
- Patent Title (中): 交换耦合膜和使用其的磁阻元件
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Application No.: US09901438Application Date: 2001-07-09
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Publication No.: US20020008947A1Publication Date: 2002-01-24
- Inventor: Naoya Hasegawa , Masamichi Saito
- Applicant: Alps Elecrtic Co., Ltd.
- Applicant Address: null
- Assignee: Alps Elecrtic Co., Ltd.
- Current Assignee: Alps Elecrtic Co., Ltd.
- Current Assignee Address: null
- Priority: JP2000-209468 20000711
- Main IPC: G11B005/39
- IPC: G11B005/39

Abstract:
An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.
Public/Granted literature
- US07142399B2 Exchange coupling film and magnetoresistive element using the same Public/Granted day:2006-11-28
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