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公开(公告)号：US09362397B2
公开(公告)日：2016-06-07
申请号：US14464785
申请日：2014-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Gi Hur , Sangsu Kim , Junggil Yang , Changjae Yang , Dongkyu Lee
CPC classification number: H01L29/7832 , H01L27/1104 , H01L29/12 , H01L29/66484 , H01L29/66787 , H01L29/7831
Abstract: A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide.
Abstract translation: 栅极全能（GAA）半导体器件可以包括鳍结构，其包括交替分层的第一和第二半导体图案。 源极区域可以延伸到交替层叠的第一和第二半导体图案中，并且漏极区域可以延伸到交替层叠的第一和第二半导体图案中。 栅电极可以在源极区域和漏极区域之间延伸并且围绕源极区域和漏极区域之间的第二半导体图案的通道部分，以限定源极和漏极区域之间的间隙。 半导体氧化物可以位于与源极和漏极区域相对的间隙的第一侧壁上，并且可以不存在面对第二半导体图案的间隙的第二侧壁中的至少一个。 栅极绝缘层可以位于栅电极和半导体氧化物之间的间隙的第一侧壁上。
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公开(公告)号：US20150084041A1
公开(公告)日：2015-03-26
申请号：US14464785
申请日：2014-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Gi Hur , Sangsu Kim , Junggil Yang , Changjae Yang , Dongkyu Lee
CPC classification number: H01L29/7832 , H01L27/1104 , H01L29/12 , H01L29/66484 , H01L29/66787 , H01L29/7831
Abstract: A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide.
Abstract translation: 栅极全能（GAA）半导体器件可以包括鳍结构，其包括交替分层的第一和第二半导体图案。 源极区域可以延伸到交替层叠的第一和第二半导体图案中，并且漏极区域可以延伸到交替层叠的第一和第二半导体图案中。 栅电极可以在源极区域和漏极区域之间延伸并且围绕源极区域和漏极区域之间的第二半导体图案的通道部分，以限定源极和漏极区域之间的间隙。 半导体氧化物可以位于与源极和漏极区域相对的间隙的第一侧壁上，并且可以不存在面对第二半导体图案的间隙的第二侧壁中的至少一个。 栅极绝缘层可以位于栅电极和半导体氧化物之间的间隙的第一侧壁上。
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公开(公告)号：US20240282864A1
公开(公告)日：2024-08-22
申请号：US18432351
申请日：2024-02-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongkyu Lee , Sungil Park , Jaehyun Park , Jinwook Yang , Jinchan Yun , Cheoljin Yun , Daewon Ha , Kyuman Hwang
IPC: H01L29/786 , H01L21/8238 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775
CPC classification number: H01L29/78696 , H01L21/823807 , H01L27/0688 , H01L27/088 , H01L29/0673 , H01L29/0847 , H01L29/42392 , H01L29/66439 , H01L29/66545 , H01L29/775
Abstract: An integrated circuit semiconductor device with three dimensional transistors includes two gate-all-around transistors or multi-bridge channel field effect transistors may be vertically stacked to reduce unit area. The two stacked transistors may be separated by an isolation insulating layer. The two stacked transistors may be positioned on two opposite sides of the isolation insulating layer, with the structure of the two stacked transistors positioned in an opposite manner. According to embodiments of the present disclosure, metal wiring layers may be connected to the two stacked transistors at their far ends, away from the isolation insulating layer. A method for manufacturing an integrated circuit semiconductor device according to the present disclosure is described. Accordingly, aspects described herein may result in reduced unit area and easy manufacture of metal wiring layer connected to the transistors.
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公开(公告)号：US12010925B2
公开(公告)日：2024-06-11
申请号：US18064367
申请日：2022-12-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
CPC classification number: H10N50/80 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/329 , H01F41/34 , H10B61/00 , H10N50/01 , H10N50/85
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.
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公开(公告)号：US11410413B2
公开(公告)日：2022-08-09
申请号：US17274282
申请日：2019-09-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongkyu Lee , Yongwook Kim , Yongju Yu , Kiyoung Kwon , Jimin Kim , Chulkwi Kim
Abstract: According to an embodiment of the disclosure, an electronic device may include a communication interface, a dynamic vision sensor (DVS) to generate bit data for each of a plurality of image frames, based on change in illuminance, a processor electrically connected with the communication interface and the DVS, and a memory electrically connected with the processor. The memory may store instructions, and the instructions may cause the processor to filter out at least a partial frame of the plurality of image frames, based on a ratio of the number of a bit value, which is included in the bit data and corresponds to each pixel, to the number of total pixels constituting each of the plurality of image frames, and recognize a shape of a surrounding object of the electronic device, based on another frame of the plurality of image frames. Moreover, various embodiment found through the disclosure are possible.
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Patent Agency Ranking
公开(公告)号：US20220181372A1
公开(公告)日：2022-06-09
申请号：US17507374
申请日：2021-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taesung LEE , Dongmin Keum , Bumsuk Kim , Jinho Kim , Junsung Park , Kwanghee Lee , Dongkyu Lee , Yunki Lee
IPC: H01L27/146 , H04N5/232
Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.
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公开(公告)号：US11116108B2
公开(公告)日：2021-09-07
申请号：US16650550
申请日：2017-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taeyoung Kim , Sehyun Lee , Hyeonji Ka , Yunpil Yeom , Dongkyu Lee
Abstract: An electronic device according to various embodiments comprises: a case for accommodating at least one electronic part; an upper cover for covering at least one part of an upper end of the case; and a connector, which is arranged on the upper cover, for electrically connecting an external module and the at least one electronic part, wherein the upper cover can guide heat generated from the at least one electronic part such that the heat is discharged to the outside along a side part of the upper cover. Additional other embodiments are possible.
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公开(公告)号：US11057749B2
公开(公告)日：2021-07-06
申请号：US16078483
申请日：2017-02-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongkyu Lee , Hangsuk Huh
IPC: H04W4/14 , H04W88/18 , H04W60/06 , H04W88/14 , H04W92/24 , H04W8/02 , H04W76/19 , H04W8/08 , H04W64/00 , H04W88/02
Abstract: The present disclosure provides a short message service (SMS) in a mobile communication system, to thus guarantee continuity of the SMS service. According to an embodiment of the present disclosure, an operating method of a control node for providing a message service in a mobile communication system includes receiving a message from a user equipment (UE) or a message delivery center, determining an active or inactive state of the message service using a first interface, and if the message service using the first interface is disabled, transmitting detach request information for re-attach of the UE to the UE.
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公开(公告)号：US20210098686A1
公开(公告)日：2021-04-01
申请号：US16893594
申请日：2020-06-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.
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公开(公告)号：US10666453B2
公开(公告)日：2020-05-26
申请号：US16143805
申请日：2018-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yongwook Kim , Dongkyu Lee
Abstract: An electronic device is disclosed. The electronic device includes: a first communication unit and a second communication unit; a processor; and a memory, wherein the memory includes instructions causing the processor to control the first communication unit to receive first identification information for the door and first opening/closing state information of the door from a server, control the second communication unit to receive second communication unit to receive second door identification information and second opening/closing state information of the door from a door, and identify information on an electronic device involved in a change in an opening/closing state of the door based on the first identification information for the door, the first opening/closing state information of the door, the second door identification information, and the second opening/closing state information of the door. Other various embodiments are possible.
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