公开(公告)号：US09972748B2

公开(公告)日：2018-05-15

申请号：US14927325

申请日：2015-10-29

申请人： OSRAM Opto Semiconductors GmbH

发明人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Rainer Butendeich ,  Christian Rumbolz

IPC分类号： H01L33/20 ,  H01L21/02 ,  H01L33/00 ,  H01L33/22

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L2933/0091

摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

公开(公告)号：US20180097072A1

公开(公告)日：2018-04-05

申请号：US15821439

申请日：2017-11-22

申请人： Infineon Technologies Americas Corp.

发明人： Michael A. Briere

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L29/15 ,  H01L29/207 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/78

摘要： A semiconductor structure includes a substrate, a transition body over the substrate, a group III-V intermediate body having a bottom surface over the transition body and a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a first impurity concentration at the bottom surface, a second impurity concentration at the top surface, and a variable impurity concentration that rises and falls between the bottom surface and the top surface. The first impurity concentration is greater than the second impurity concentration.

公开(公告)号：US09917218B2

公开(公告)日：2018-03-13

申请号：US15114267

申请日：2014-02-06

申请人： TOYOTA MOTOR EUROPE NV/SA

发明人： Sachin Kinge ,  Enrique Canovas Diaz ,  Mischa Bonn

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035218 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/035236 ,  H01L31/1836 ,  H01L31/1868

摘要： The present invention presents a process for preparing a quantum dot array comprising at least the steps of: (a) providing a crystalline semiconductor substrate surface; (b) depositing quantum dots on the said substrate surface by a process of successive ionic layer adsorption and reaction (SILAR). The steps can be repeated to build up a quantum dot superlattice structure.

公开(公告)号：US20180068846A1

公开(公告)日：2018-03-08

申请号：US15651203

申请日：2017-07-17

申请人： ASM IP Holding B.V.

发明人： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC分类号： H01L21/02 ,  H01L29/778 ,  H01L29/267 ,  H01L21/28 ,  H01L29/66 ,  H01L29/22 ,  H01L29/78

CPC分类号： H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

摘要： In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US09881999B2

公开(公告)日：2018-01-30

申请号：US12488310

申请日：2009-06-19

申请人： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

发明人： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC分类号： B32B5/02 ,  B32B9/00 ,  H01L29/06 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/10 ,  H01L21/02 ,  H01L23/00 ,  H01L29/12 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/24 ,  H01L35/00 ,  H01L41/18 ,  H01L41/09 ,  H01L33/18 ,  H01S5/34

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

公开(公告)号：US20170338101A1

公开(公告)日：2017-11-23

申请号：US15428657

申请日：2017-02-09

申请人： Panasonic Corporation

发明人： Akio UETA ,  Akihiko ISHIBASHI

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/40 ,  H01L33/00

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/22 ,  C30B29/406 ,  H01L21/02046 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02598 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： On an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

公开(公告)号：US09824892B2

公开(公告)日：2017-11-21

申请号：US13812089

申请日：2012-05-17

申请人： Adrian Kitai ,  Haoling Yu ,  Bo Li

发明人： Adrian Kitai ,  Haoling Yu ,  Bo Li

IPC分类号： H01L21/02 ,  H01L29/06 ,  C30B9/10 ,  C30B19/12 ,  C30B29/06

CPC分类号： H01L21/02634 ,  C30B9/10 ,  C30B19/12 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02658 ,  H01L29/0657

摘要： A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.

公开(公告)号：US09816173B2

公开(公告)日：2017-11-14

申请号：US13657196

申请日：2012-10-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  G02F1/1368

CPC分类号： C23C14/08 ,  C23C14/3414 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： A material suitable for a semiconductor included in a transistor, a diode, or the like is provided. The material is an oxide material including In, M1, M2 and Zn, in which M1 is an element in the group 13 of the periodic table, a typical example thereof is Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. To contain M2 leads to suppression of generation of oxygen vacancies in the oxide material. A transistor which includes as few oxygen vacancies as possible can be achieved, whereby reliability of a semiconductor device can be increased.

公开(公告)号：US20170309710A1

公开(公告)日：2017-10-26

申请号：US15465149

申请日：2017-03-21

申请人： Solan, LLC

发明人： Mark Alan Davis

IPC分类号： H01L29/16 ,  C23C14/06 ,  C23C14/34 ,  H01L21/02 ,  C23C16/26

CPC分类号： C01B32/182 ,  C01B32/00 ,  C01B32/152 ,  C01B32/16 ,  C01B32/18 ,  C01B32/184 ,  C01B32/186 ,  C01B32/188 ,  C01B32/20 ,  C01B2204/04 ,  C23C14/0605 ,  C23C14/34 ,  C23C16/04 ,  C23C16/26 ,  H01L21/02 ,  H01L21/02104 ,  H01L21/02115 ,  H01L21/02225 ,  H01L21/0226 ,  H01L21/02263 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02296 ,  H01L21/02318 ,  H01L21/0237 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02645 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L29/1606 ,  H01L29/413 ,  H01L29/66015

摘要： A structure is provided that comprises a substrate, a plurality of elements, and a plurality of trenches disposed on the substrate. Each element is separated from adjacent elements by a trench in the plurality of trenches and has a top surface with a first and an opposing second side. A first portion of the top surface is on the first side and a second portion of the top surface is on the opposing second side. The structure further comprises a plurality of first graphene layers, each of which is formed on the first portion of the top surface of an element in the plurality of elements. The structure further comprises a plurality of second graphene layers, each of which is formed on the second portion of the top surface of a corresponding element so that each element is separately overlayed by a first graphene layer and a second graphene layer.

公开(公告)号：US09793104B2

公开(公告)日：2017-10-17

申请号：US15008663

申请日：2016-01-28

申请人： AIXTRON SE

发明人： Maxim Kelman ,  Shahab Khandan ,  Scott Dunham ,  Tac van Huynh ,  Kenneth B. K. Teo

IPC分类号： H01L21/02 ,  H01L21/67 ,  C23C16/02

CPC分类号： H01L21/02049 ,  C23C16/0236 ,  C23C16/0245 ,  H01L21/02046 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02658 ,  H01L21/306 ,  H01L21/67103 ,  H01L21/67207

摘要： Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.