公开(公告)号：US20240203989A1

公开(公告)日：2024-06-20

申请号：US18227064

申请日：2023-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinbum KIM ,  Gyeom KIM ,  Youngkwang KIM ,  Chanyoung KIM ,  Jangwoo PARK ,  Sangmoon LEE ,  Sujin JUNG

IPC: H01L27/092 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) (PMOSFET) region and an n-type MOSFET (NMOSFET) region, a first active pattern on the PMOSFET region, a second active pattern on the NMOSFET region, a first channel pattern and a first source/drain pattern on the first active pattern, the first channel pattern connected to the first source/drain pattern, a second channel pattern and a second source/drain pattern provided on the second active pattern, the second channel pattern connected to the second source/drain pattern, and a gate electrode on the first channel pattern and the second channel pattern.

公开(公告)号：US20230100189A1

公开(公告)日：2023-03-30

申请号：US17730928

申请日：2022-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dahye KIM ,  Sujin JUNG ,  Ingyu JANG ,  Jinbum KIM

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of channel layers on the fin-type active region that are spaced apart from each other in a second direction that is perpendicular to an upper surface of the substrate, a gate structure that intersects the fin-type active region, extends in the second direction, and surrounds each of the plurality of channel layers in a third direction, fence spacers on side surfaces of the fin-type active region in the second direction on sides of the gate structure and extending in the second direction, and a source/drain region between the fence spacers on the fin-type active region at sides of the gate structure, connected to each of the plurality of channel layers, and having voids in side surfaces adjacent the fence spacers.

公开(公告)号：US20220199618A1

公开(公告)日：2022-06-23

申请号：US17383749

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin JUNG ,  Kihwan KIM ,  Sunguk JANG ,  Youngdae CHO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

Abstract: An integrated circuit (IC) device includes a fin-type active region extending longitudinally in a first lateral direction on a substrate. A nanosheet is apart from a fin top surface of the fin-type active region in a vertical direction. An inner insulating spacer is between the substrate and the nanosheet. A gate line includes a main gate portion and a sub-gate portion. The main gate portion extends longitudinally in a second lateral direction on the nanosheet. The sub-gate portion is integrally connected to the main gate portion and between the substrate and the nanosheet. A source/drain region is in contact with the inner insulating spacer and the nanosheet. The source/drain region includes a single crystalline semiconductor body and at least one lower stacking fault surface linearly extending from the inner insulating spacer through the single crystalline semiconductor body.

公开(公告)号：US20180151705A1

公开(公告)日：2018-05-31

申请号：US15871479

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： JinBum KIM ,  Kang Hun MOON ,  Choeun LEE ,  Sujin JUNG ,  Yang XU

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/823425 ,  H01L21/823431 ,  H01L29/0657 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7848

Abstract: Methods of forming an integrated circuit device are provided. The methods may include forming a gate structure on a substrate, forming a first etch mask on a sidewall of the gate structure, anisotropically etching the substrate using the gate structure and the first etch mask as an etch mask to form a preliminary recess in the substrate, forming a sacrificial layer in the preliminary recess, forming a second etch mask on the first etch mask, etching the sacrificial layer and the substrate beneath the sacrificial layer using the gate structure and the first and second etch masks as an etch mask to form a source/drain recess in the substrate, and forming a source/drain in the source/drain recess. A sidewall of the source/drain recess may be recessed toward the gate structure relative to an outer surface of the second etch mask.

公开(公告)号：US20250048699A1

公开(公告)日：2025-02-06

申请号：US18607960

申请日：2024-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan KIM ,  Unki KIM ,  Chanyoung KIM ,  Jeongho YOO ,  Ingyu JANG ,  Sujin JUNG

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern wherein the channel pattern includes semiconductor patterns vertically stacked and spaced apart from each other, the plurality of semiconductor patterns including a first semiconductor pattern and a neighboring second semiconductor pattern, and a gate electrode on the semiconductor patterns. The gate electrode includes an inner electrode between the first and second semiconductor patterns. The source/drain pattern includes a buffer layer and a main layer on the buffer layer. An indent region is defined in a vertical cross section of the device by the main layer, the first and second semiconductor patterns, and the inner electrode. The buffer layer is in the indent region. The buffer layer does not extend onto sidewalls of the first and second semiconductor patterns.

公开(公告)号：US20230006040A1

公开(公告)日：2023-01-05

申请号：US17577088

申请日：2022-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmoon LEE ,  Jinbum KIM ,  Hyojin KIM ,  Yongjun NAM ,  Sujin JUNG

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/423

Abstract: An integrated circuit (IC) device includes a fin-type active region extending on a substrate in a first lateral direction. A gate line extends on the fin-type active region in a second lateral direction. The second lateral direction intersects the first lateral direction. A channel region is between the substrate and the gate line. A source/drain region is adjacent to the gate line on the fin-type active region and has a sidewall facing the channel region. A superlattice barrier is between the substrate and the channel region. The superlattice barrier is in contact with the source/drain region. The superlattice barrier has a structure in which a plurality of first sub-layers including a semiconductor layer doped with oxygen atoms and a plurality of second sub-layers including an undoped semiconductor layer are alternately stacked.

公开(公告)号：US20220174824A1

公开(公告)日：2022-06-02

申请号：US17518222

申请日：2021-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangpil LEE ,  Yonghan LEE ,  Changhwan LEE ,  Sujin JUNG

IPC: H05K5/00 ,  H05K1/02

Abstract: An electronic device is provided. The electronic device includes a housing, a display disposed inside the housing, the display disposed in a first direction so that a screen of the display is exposed to an outside of the housing, a first printed circuit board (PCB) disposed inside the housing, a flexible printed circuit board (FPCB) disposed inside the housing and including a first portion adjacent to the display and a third portion extending from the first portion and electrically connected with the first PCB, a first guide member disposed inside the housing, and a second guide member disposed inside the housing. At least a portion of the third portion may be disposed to pass between the first guide member and the second guide member. The at least the portion of the third portion may be provided with force in a second direction opposite to the first direction by the first guide member.

公开(公告)号：US20220005958A1

公开(公告)日：2022-01-06

申请号：US17480457

申请日：2021-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunguk JANG ,  Kihwan KIM ,  Sujin JUNG ,  Youngdae CHO

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active region on a substrate extending in a first direction, the active region having an upper surface and sidewalls, a plurality of channel layers above the active region to be vertically spaced apart from each other, a gate electrode extending in a second direction to intersect the active region and partially surrounding the plurality of channel layers, and a source/drain region on the active region on at least one side of the gate electrode and in contact with the plurality of channel layers, and extending from the sidewalls of the active region having a major width in the second direction in a first region adjacent to a lowermost channel layer adjacent to the active region among the plurality of channel layer.

公开(公告)号：US20210372595A1

公开(公告)日：2021-12-02

申请号：US17263702

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Iksu JUNG ,  Changjin YANG ,  Changwoo JUNG ,  Jinwoo KIM ,  Heejun PARK ,  Minseok SHIN ,  Sujin JUNG

IPC: F21V13/02 ,  F21V33/00 ,  F21V3/00 ,  F21V7/05 ,  F21V23/04 ,  F21V11/08

Abstract: An electronic apparatus according to an embodiment comprises: a housing including a first surface, a second surface facing the first surface, and a third surface which surrounds the inner space between the first surface and the second surface; a support member extending from the housing to the outside of the housing to support the housing; a speaker module arranged in the inner space; a first window arranged between the first surface and the speaker module and including a first light-transmitting surface facing the first surface and a first reflective surface facing away from the first light-transmitting surface; a second window arranged between the first window and the first surface and including a second light-transmitting surface facing the first surface and a second reflective surface facing away from the second light-transmitting surface; a light source module arranged between the first window and the speaker module; and a light diffusion member arranged between the light source module and the first reflective surface. The first window may include a light-transmitting region formed on at least a portion of the first reflective surface, through which light diffused by the light diffusion member transmits. Other embodiments are possible.

公开(公告)号：US20150214370A1

公开(公告)日：2015-07-30

申请号：US14491117

申请日：2014-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinbum KIM ,  Bonyoung KOO ,  Seokhoon KIM ,  Chul KIM ,  Kwan Heum LEE ,  Byeongchan LEE ,  Sujin JUNG

IPC: H01L29/78 ,  H01L29/08

CPC classification number: H01L29/0847 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate provided with an active pattern; a gate structure provided on the active pattern to cross the active pattern; and source/drain regions provided at both sides of the gate structure. The active pattern includes a first region below the gate structure and second regions at both sides of the gate structure. A top surface of each of the second regions is lower than that of the first region. The source/drain regions are provided on the second regions, respectively, and each of the source/drain regions covers partially both sidewalls of each of the second regions.

Abstract translation: 半导体器件包括具有活性图案的衬底; 栅极结构，设置在所述有源图案上以穿过所述有源图案; 以及设置在栅极结构的两侧的源极/漏极区域。 有源图案包括栅极结构下方的第一区域和栅极结构两侧的第二区域。 每个第二区域的顶表面低于第一区域的顶表面。 源极/漏极区域分别设置在第二区域上，并且每个源极/漏极区域部分地覆盖每个第二区域的两个侧壁。