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公开(公告)号：US20220182513A1
公开(公告)日：2022-06-09
申请号：US17534958
申请日：2021-11-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwoo KIM , Sujin JUNG , Seungkwon CHOI , Kyoungjong KIM
IPC: H04N5/225
Abstract: An electronic device is provided. The electronic device includes a housing including a support member and a rear plate, a camera support member disposed between the support member and the rear plate, a camera module disposed on the support member, a camera window covering at least a part of the camera module, and a compression member disposed between the camera window and the camera module. The camera module may include a first area facing the camera support member, a second area facing the compression member, and a third area facing the camera window and at least partially surrounded by the compression member.
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公开(公告)号：US20220115514A1
公开(公告)日：2022-04-14
申请号：US17559347
申请日：2021-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sujin JUNG , Kihwan KIM , Sunguk JANG , Youngdae CHO
IPC: H01L29/423 , H01L29/786 , H01L29/06 , H01L29/08
Abstract: A semiconductor device including: an active pattern on a substrate, the active pattern including a recess, the recess having a “V” shape; a growth prevention pattern on the recess; gate structures on portions of the active pattern at opposite sides of the recess; channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the channels extending through one of the gate structures; and a source/drain layer on the growth prevention pattern, the source/drain layer contacting the channels.
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公开(公告)号：US20200053444A1
公开(公告)日：2020-02-13
申请号：US16535569
申请日：2019-08-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwoo KIM , Sujin JUNG , Youngjin CHO , Sungjin PARK , Hyunmin OH , lksu JUNG
Abstract: An electronic device is provided. The electronic device includes a housing including a first plate and at least one first opening; and a speaker structure spaced apart from the first plate and disposed in the housing, wherein the speaker structure includes a first structure which faces in a first direction, opposes the first plate, and forms a space connecting to the at least one first opening along with the first plate; a second opening formed by penetrating through a part of the first structure; at least one component disposed in the speaker structure and emitting heat; a thermal conducting member including a first portion disposed in the speaker structure and being in contact with the at least one component, and a second portion disposed in the second opening; and at least one speaker disposed in a direction different from the first direction.
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公开(公告)号：US20160359021A1
公开(公告)日：2016-12-08
申请号：US15134556
申请日：2016-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： JinBum KIM , Kang Hun MOON , Choeun LEE , Sujin JUNG , Yang XU
IPC: H01L29/66 , H01L29/08 , H01L21/306 , H01L29/06 , H01L21/308 , H01L29/78 , H01L21/8234
CPC classification number: H01L29/66795 , H01L21/823425 , H01L21/823431 , H01L29/0657 , H01L29/0688 , H01L29/0847 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/6656 , H01L29/7848
Abstract: Methods of forming an integrated circuit device are provided. The methods may include forming a gate structure on a substrate, forming a first etch mask on a sidewall of the gate structure, anisotropically etching the substrate using the gate structure and the first etch mask as an etch mask to form a preliminary recess in the substrate, forming a sacrificial layer in the preliminary recess, forming a second etch mask on the first etch mask, etching the sacrificial layer and the substrate beneath the sacrificial layer using the gate structure and the first and second etch masks as an etch mask to form a source/drain recess in the substrate, and forming a source/drain in the source/drain recess. A sidewall of the source/drain recess may be recessed toward the gate structure relative to an outer surface of the second etch mask.
Abstract translation: 提供了形成集成电路器件的方法。 所述方法可以包括在衬底上形成栅极结构，在栅极结构的侧壁上形成第一蚀刻掩模，使用栅极结构和第一蚀刻掩模各向异性蚀刻衬底作为蚀刻掩模，以在衬底中形成预备凹槽 在所述初步凹槽中形成牺牲层，在所述第一蚀刻掩模上形成第二蚀刻掩模，使用所述栅极结构和所述第一和第二蚀刻掩模作为蚀刻掩模蚀刻所述牺牲层和所述牺牲层下方的所述衬底，以形成 源极/漏极凹部，并且在源极/漏极凹部中形成源极/漏极。 源极/漏极凹部的侧壁可以相对于第二蚀刻掩模的外表面朝向栅极结构凹陷。
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公开(公告)号：US20230395684A1
公开(公告)日：2023-12-07
申请号：US18130070
申请日：2023-04-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sujin JUNG , Jinbum Kim , Dahye Kim , Ingyu Jang
IPC: H01L29/423 , H01L29/06 , H01L29/786 , H01L29/775
CPC classification number: H01L29/42392 , H01L29/0673 , H01L29/78696 , H01L29/775
Abstract: A semiconductor device is provided. The semiconductor device includes: an active region extending in a first direction on a substrate, a plurality of channel layers spaced apart from each other in a vertical direction, a gate structure enclosing the plurality of channel layers, respectively, and a source/drain region contacting the plurality of channel layers. The source/drain region includes a first epitaxial layer extending to contact the plurality of channel layers, and a second epitaxial layer on the first epitaxial layer. A surface in which the first epitaxial layer and the second epitaxial layer contact each other includes: first surfaces having a first slope; second surfaces having a second slope, different from the first slope; first bent portions between the first surfaces and the second surfaces; and a second bent portion in which the second surfaces meet.
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Patent Agency Ranking
公开(公告)号：US20210321185A1
公开(公告)日：2021-10-14
申请号：US17250590
申请日：2019-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwoo KIM , Sujin JUNG , Hakrae KANG , Heejun PARK , Minseok SHIN , Changhwan LEE
Abstract: According to an embodiment of the present invention, an electronic device may comprise: a housing; a printed circuit board disposed inside the housing, the printed circuit board comprising a first surface, a second surface facing away from the first surface, and a first through-hole and a second through-hole penetrating the first surface and the second surface; a first microphone disposed on the second surface so as to at least partially overlap the first through-hole when seen from above the first surface; a second microphone disposed on the second surface so as to at least partially overlap the second through-hole when seen from above the first surface; a support member disposed on the first surface, the support member comprising a third surface facing the first surface, a fourth surface facing away from the third surface, a third through-hole at least partially overlapping the first through-hole when seen from above the first surface, and a fourth through-hole at least partially overlapping the second through-hole when seen from above the first surface; a first sound-transmitting member disposed on the fourth surface so as to at least partially overlap the third through-hole; and a second sound-transmitting member disposed on the fourth surface so as to at least partially overlap the fourth through-hole. Various other embodiments may be included.
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公开(公告)号：US20180108779A1
公开(公告)日：2018-04-19
申请号：US15844863
申请日：2017-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sujin JUNG , JinBum KIM , KANG HUN MOON , KWAN HEUM LEE , BYEONGCHAN LEE , Choeun LEE , Yang XU
CPC classification number: H01L29/7851 , H01L29/0847 , H01L29/66795 , H01L29/7848
Abstract: A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding from the substrate and extending in a first direction, the fin pattern including a gate fin region and a source/drain fin region, a gate pattern disposed on the gate fin region to extend in a second direction crossing the first direction, and a source/drain portion provided on a sidewall of the source/drain fin region. When measured in the second direction, a width of the source/drain fin region is different from a width in the second direction of the gate fin region.
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公开(公告)号：US20160351715A1
公开(公告)日：2016-12-01
申请号：US15135566
申请日：2016-04-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sujin JUNG , JinBum KIM , KANG HUN MOON , KWAN HEUM LEE , BYEONGCHAN LEE , Choeun LEE , Yang XU
CPC classification number: H01L29/7851 , H01L29/0847 , H01L29/66795 , H01L29/7848
Abstract: A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding from the substrate and extending in a first direction, the fin pattern including a gate fin region and a source/drain fin region, a gate pattern disposed on the gate fin region to extend in a second direction crossing the first direction, and a source/drain portion provided on a sidewall of the source/drain fin region. When measured in the second direction, a width of the source/drain fin region is different from a width in the second direction of the gate fin region.
Abstract translation: 公开了一种半导体器件。 该器件包括：衬底，其包括由器件隔离层限定的有源区，从衬底突出并沿第一方向延伸的鳍状图案，所述鳍图案包括栅极鳍区和源极/漏极鳍区，栅极图案设置 在所述栅极鳍区域上沿与所述第一方向交叉的第二方向延伸，以及设置在所述源极/漏极鳍片区域的侧壁上的源极/漏极部分。 当在第二方向上测量时，源极/漏极鳍片区域的宽度不同于栅极鳍片区域的第二方向上的宽度。
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公开(公告)号：US20150287711A1
公开(公告)日：2015-10-08
申请号：US14562788
申请日：2014-12-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： SEOKHOON KIM , BONYOUNG KOO , JinBum KIM , CHUL KIM , KWAN HEUM LEE , BYEONGCHAN LEE , Sujin JUNG
IPC: H01L27/02 , H01L29/06 , H01L27/088 , H01L29/78
CPC classification number: H01L27/0207 , H01L21/823431 , H01L27/0886 , H01L29/0649 , H01L29/66545 , H01L29/7834 , H01L29/7848
Abstract: Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions.
Abstract translation: 提供一种半导体器件，其包括：衬底，其包括第一区域和与第一区域不同的第二区域;设置在第一区域中的衬底上的第一有源图案，设置在第二区域中的衬底上的第二有源图案; 在第一有源图案上交叉的第一栅极结构和与第二有源图案交叉的第二栅极结构，在第一栅极结构的相对侧设置在第一有源图案上的第一源/漏区，设置在第二有源图案上的第二栅极结构的第二栅极结构 在第二栅极结构的相对侧的有源图案以及设置在第一区域中以覆盖每个第一源极/漏极区域的下部的辅助间隔物。
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公开(公告)号：US20240334031A1
公开(公告)日：2024-10-03
申请号：US18742429
申请日：2024-06-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinwoo KIM , Sujin JUNG , Seungkwon CHOI , Kyoungjong KIM
Abstract: An electronic device is provided. The electronic device includes a housing including a support member and a rear plate, a camera support member disposed between the support member and the rear plate, a camera module disposed on the support member, a camera window covering at least a part of the camera module, and a compression member disposed between the camera window and the camera module. The camera module may include a first area facing the camera support member, a second area facing the compression member, and a third area facing the camera window and at least partially surrounded by the compression member.
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