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    SEMICONDUCTOR DEVICES
    1.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220005958A1

    公开(公告)日：2022-01-06

    申请号：US17480457

    申请日：2021-09-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunguk JANG ,  Kihwan KIM ,  Sujin JUNG ,  Youngdae CHO

    IPC: H01L29/786 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

    Abstract: A semiconductor device includes an active region on a substrate extending in a first direction, the active region having an upper surface and sidewalls, a plurality of channel layers above the active region to be vertically spaced apart from each other, a gate electrode extending in a second direction to intersect the active region and partially surrounding the plurality of channel layers, and a source/drain region on the active region on at least one side of the gate electrode and in contact with the plurality of channel layers, and extending from the sidewalls of the active region having a major width in the second direction in a first region adjacent to a lowermost channel layer adjacent to the active region among the plurality of channel layer.

    INTEGRATED CIRCUIT DEVICE
    4.
    发明申请
    INTEGRATED CIRCUIT DEVICE 有权

    公开(公告)号：US20220199618A1

    公开(公告)日：2022-06-23

    申请号：US17383749

    申请日：2021-07-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sujin JUNG ,  Kihwan KIM ,  Sunguk JANG ,  Youngdae CHO

    IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

    Abstract: An integrated circuit (IC) device includes a fin-type active region extending longitudinally in a first lateral direction on a substrate. A nanosheet is apart from a fin top surface of the fin-type active region in a vertical direction. An inner insulating spacer is between the substrate and the nanosheet. A gate line includes a main gate portion and a sub-gate portion. The main gate portion extends longitudinally in a second lateral direction on the nanosheet. The sub-gate portion is integrally connected to the main gate portion and between the substrate and the nanosheet. A source/drain region is in contact with the inner insulating spacer and the nanosheet. The source/drain region includes a single crystalline semiconductor body and at least one lower stacking fault surface linearly extending from the inner insulating spacer through the single crystalline semiconductor body.

    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYER
    6.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYER 有权

    公开(公告)号：US20210066455A1

    公开(公告)日：2021-03-04

    申请号：US16821491

    申请日：2020-03-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

    IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

    RECIPROCATING COMPRESSOR USING OUTER ROTOR MOTOR
    7.
    发明申请
    RECIPROCATING COMPRESSOR USING OUTER ROTOR MOTOR 有权

    公开(公告)号：US20240426286A1

    公开(公告)日：2024-12-26

    申请号：US18750168

    申请日：2024-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kihwan KIM ,  Minjin KIM ,  Kisun NAM ,  Hyunwoo RYU ,  Incheol HWANG

    IPC: F04B35/04 ,  F04B53/22 ,  F25B31/02

    Abstract: A reciprocating compressor is provided. The reciprocating compressor includes a bearing block, a fixed shaft extending vertically from a lower surface of the bearing block, formed in a cylindrical shape, and having a shaft hole formed therein, a stator disposed on the bearing block and including a coupling hole into which the fixed shaft is inserted, a holder disposed on an outer circumferential surface of the fixed shaft and configured to fix the stator to the bearing block, a rotating shaft inserted into the shaft hole of the fixed shaft, and a rotor disposed outside the stator and fixed to one end of the rotating shaft. The outer circumferential surface of the fixed shaft and the shaft hole may be formed concentrically.

    SEMICONDUCTOR DEVICES
    8.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220115514A1

    公开(公告)日：2022-04-14

    申请号：US17559347

    申请日：2021-12-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sujin JUNG ,  Kihwan KIM ,  Sunguk JANG ,  Youngdae CHO

    IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/08

    Abstract: A semiconductor device including: an active pattern on a substrate, the active pattern including a recess, the recess having a “V” shape; a growth prevention pattern on the recess; gate structures on portions of the active pattern at opposite sides of the recess; channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the channels extending through one of the gate structures; and a source/drain layer on the growth prevention pattern, the source/drain layer contacting the channels.

    ELECTRONIC APPARATUS INCLUDING PROJECTOR
    9.
    发明申请
    ELECTRONIC APPARATUS INCLUDING PROJECTOR 有权

    公开(公告)号：US20220094889A1

    公开(公告)日：2022-03-24

    申请号：US17432728

    申请日：2019-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinhak LEE ,  Kihwan KIM ,  Younjung KIM ,  Junyoung KIM ,  Sanghee PARK ,  Yunson YOO ,  Minyoung LEE ,  Ilkwang CHOI

    IPC: H04N9/31 ,  H04N5/225 ,  G06K9/00

    Abstract: An electronic apparatus according to various embodiments disclosed in the disclosure may comprise: a first housing rotatable about a first axis; a projector module coupled to a portion of the first housing and rotatable about a second axis perpendicular to the first axis; a vision sensor module rotatable about the first axis; a second housing; a first driving device disposed inside the first housing and capable of transmitting power to each of the projector module and the first housing; and a second driving device disposed inside the second housing and capable of transmitting power to the vision sensor module. According to the various embodiments, the projector module can rotate independently of the first housing in the direction of the second axis, and the vision sensor module can rotate independently of the first housing in the direction of the first axis.

    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYERS
    10.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYERS 有权

    公开(公告)号：US20220093739A1

    公开(公告)日：2022-03-24

    申请号：US17541878

    申请日：2021-12-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

    IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

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