公开(公告)号：US20240154285A1

公开(公告)日：2024-05-09

申请号：US18415219

申请日：2024-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH Research and Business Development Foundation

Inventor： Seungtae KO ,  Youngju LEE ,  Jaehong CHOI ,  Wonbin HONG

IPC: H01P1/18 ,  H01L27/13 ,  H01Q3/46 ,  H01Q15/00

CPC classification number: H01P1/18 ,  H01L27/13 ,  H01Q3/46 ,  H01Q15/002

Abstract: An electronic device includes: a glass substrate including a first surface and a second surface opposite to the first surface; a semiconductor element provided on the first surface of the glass substrate; a first pattern provided on the first surface of the glass substrate, the first pattern being electrically connected to a first end of the semiconductor element; a second pattern provided on the first surface of the glass substrate, the second pattern being electrically connected to a second end of the semiconductor element; a feeding line provided on the second surface of the glass substrate; and a via hole which passes through the glass substrate in a first direction, the via hole electrically connecting the feeding line to the second pattern.

公开(公告)号：US20220093739A1

公开(公告)日：2022-03-24

申请号：US17541878

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

公开(公告)号：US20230327343A1

公开(公告)日：2023-10-12

申请号：US18335517

申请日：2023-06-15

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Seungtae KO ,  Wonbin HONG ,  Youngju LEE ,  Youngno YOUN ,  Jaehong CHOI

IPC: H01Q19/06 ,  H01Q3/36

CPC classification number: H01Q19/06 ,  H01Q3/36

Abstract: A beamforming device in a wireless communication system is provided that includes a phased array antenna, at least one wireless communication circuit, and a lens, wherein the lens comprises a first surface oriented in a first direction, which is the direction toward the phased array antenna, and a second surface oriented in a second direction, which is the opposite direction of the first direction, and a first beam radiated from the phased array antenna is refracted after passing through a first point on the first surface, and forms a first path inside the lens and forms a second path along which the first beam is refracted at a second point on the second surface after passing through the inside of the lens along the first path, wherein the refraction angle at the second point may be formed so as to be dependent on the radiation angle of the first beam.

公开(公告)号：US20210066455A1

公开(公告)日：2021-03-04

申请号：US16821491

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.