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    Physically unclonable function based on comparison of MTJ resistances
    11.
    发明授权
    Physically unclonable function based on comparison of MTJ resistances 有权

    公开(公告)号：US09870811B2

    公开(公告)日：2018-01-16

    申请号：US15185441

    申请日：2016-06-17

    Applicant: QUALCOMM Incorporated

    Inventor： Peiyuan Wang ,  Jung Pill Kim ,  Jimmy Jianan Kan ,  Chando Park ,  Seung Kang

    IPC: G11C11/16 ,  G11C17/02

    CPC classification number: G11C11/1675 ,  G11C7/20 ,  G11C11/1693 ,  G11C11/1695 ,  G11C14/0081

    Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.

    Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
    13.
    发明授权
    Magnetic tunneling junction non-volatile register with feedback for robust read and write operations 有权
    磁性隧道结非易失性寄存器，具有反馈功能，用于强大的读写操作

    公开(公告)号：US09147454B2

    公开(公告)日：2015-09-29

    申请号：US13792440

    申请日：2013-03-11

    Applicant: QUALCOMM Incorporated

    Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

    IPC: G11C11/02 ,  G11C11/16 ,  G11C14/00 ,  H03K3/037

    CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

    Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

    Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

    MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS
    14.
    发明申请
    MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS 有权
    具有反馈功能的磁性连接非挥发性寄存器，用于强制读取和写入操作

    公开(公告)号：US20140198563A1

    公开(公告)日：2014-07-17

    申请号：US13792440

    申请日：2013-03-11

    Applicant: QUALCOMM INCORPORATED

    Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

    IPC: G11C11/02

    CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

    Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

    Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

    Method and apparatus for generating random numbers using a physical entropy source
    19.
    发明授权
    Method and apparatus for generating random numbers using a physical entropy source 有权
    使用物理熵源产生随机数的方法和装置

    公开(公告)号：US09164729B2

    公开(公告)日：2015-10-20

    申请号：US13759130

    申请日：2013-02-05

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

    IPC: G06F7/58

    CPC classification number: G06F7/58 ,  G06F7/588

    Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

    Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。

    CONTACTLESS DATA COMMUNICATION USING IN-PLANE MAGNETIC FIELDS, AND RELATED SYSTEMS AND METHODS
    20.
    发明申请
    CONTACTLESS DATA COMMUNICATION USING IN-PLANE MAGNETIC FIELDS, AND RELATED SYSTEMS AND METHODS 有权
    使用平面内磁场进行无缝数据通信，以及相关系统和方法

    公开(公告)号：US20150084972A1

    公开(公告)日：2015-03-26

    申请号：US14036526

    申请日：2013-09-25

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

    IPC: G09G3/20 ,  H04B5/00

    CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

    Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

    Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

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