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    Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
    2.
    发明授权
    Magnetic tunneling junction non-volatile register with feedback for robust read and write operations 有权
    磁性隧道结非易失性寄存器，具有反馈功能，用于强大的读写操作

    公开(公告)号：US09147454B2

    公开(公告)日：2015-09-29

    申请号：US13792440

    申请日：2013-03-11

    Applicant: QUALCOMM Incorporated

    Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

    IPC: G11C11/02 ,  G11C11/16 ,  G11C14/00 ,  H03K3/037

    CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

    Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

    Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

    SENSE AMPLIFIERS EMPLOYING CONTROL CIRCUITRY FOR DECOUPLING RESISTIVE MEMORY SENSE INPUTS DURING STATE SENSING TO PREVENT CURRENT BACK INJECTION, AND RELATED METHODS AND SYSTEMS
    3.
    发明申请
    SENSE AMPLIFIERS EMPLOYING CONTROL CIRCUITRY FOR DECOUPLING RESISTIVE MEMORY SENSE INPUTS DURING STATE SENSING TO PREVENT CURRENT BACK INJECTION, AND RELATED METHODS AND SYSTEMS 有权
    使用控制电路的感应放大器，用于在状态感测期间解除电阻性记忆信号输入以防止电流背景注入，以及相关方法和系统

    公开(公告)号：US20150194209A1

    公开(公告)日：2015-07-09

    申请号：US14165702

    申请日：2014-01-28

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Venkatasubramanian Narayanan ,  Kendrick Hoy Leong Yuen

    IPC: G11C13/00 ,  G11C11/16

    CPC classification number: G11C13/004 ,  G11C7/065 ,  G11C7/08 ,  G11C7/222 ,  G11C11/1673 ,  G11C2013/0042 ,  G11C2013/0057 ,  G11C2207/002

    Abstract: Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems are disclosed. In one embodiment, sense amplifier is provided. The sense amplifier comprises a differential sense input coupled to bit line. The sense amplifier also comprises a differential reference input coupled to reference line. First inverter inverts first inverter input into first inverter output coupled to second inverter input of second inverter, first inverter output configured to provide state of bitcell. Second inverter inverts second inverter input into second inverter output coupled to first inverter input. Control circuit couples differential reference input to first inverter and differential sense input to second inverter in latch mode, and decouples differential reference input to first inverter and differential sense input to second inverter in sensing mode to provide sensed state of bitcell on first inverter output.

    Abstract translation: 公开了采用控制电路的感应放大器，用于在状态检测期间去耦电阻性存储器感测输入以防止电流反向注入，以及相关方法和系统。 在一个实施例中，提供了读出放大器。 感测放大器包括耦合到位线的差分感测输入。 读出放大器还包括耦合到参考线的差分参考输入。 第一变频器将第一变频器输入转换为与第二变频器的第二变频器输入相连接的第一变频器输出，第一变频器输出被配置为提供位单元的状态。 第二个变频器将第二个变频器输入转换成与第一个变频器输入相连的第二个变频器输出。 控制电路在锁存模式下将差分参考输入与第一个反相器和差分检测输入耦合到第二个反相器，在感测模式下将差分参考输入与第一个反相器和差分检测输入去耦到第二个反相器，以提供第一个反相器输出上的位单元的检测状态。

    MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS
    4.
    发明申请
    MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS 有权
    具有反馈功能的磁性连接非挥发性寄存器，用于强制读取和写入操作

    公开(公告)号：US20140198563A1

    公开(公告)日：2014-07-17

    申请号：US13792440

    申请日：2013-03-11

    Applicant: QUALCOMM INCORPORATED

    Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

    IPC: G11C11/02

    CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

    Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

    Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

    Contactless data communication using in-plane magnetic fields, and related systems and methods
    5.
    发明授权
    Contactless data communication using in-plane magnetic fields, and related systems and methods 有权
    使用平面内磁场的非接触式数据通信，以及相关的系统和方法

    公开(公告)号：US09495899B2

    公开(公告)日：2016-11-15

    申请号：US14036526

    申请日：2013-09-25

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

    IPC: H04B5/00 ,  H01L43/00 ,  G09G3/20 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

    Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

    Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

    High density low power GSHE-STT MRAM
    7.
    发明授权
    High density low power GSHE-STT MRAM 有权

    公开(公告)号：US09324402B2

    公开(公告)日：2016-04-26

    申请号：US14479832

    申请日：2014-09-08

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

    IPC: G11C11/16 ,  H01L43/14 ,  G11C11/18

    CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

    Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

    High density low power GSHE-STT MRAM
    8.
    发明授权
    High density low power GSHE-STT MRAM 有权
    高密度低功率GSHE-STT MRAM

    公开(公告)号：US09230627B2

    公开(公告)日：2016-01-05

    申请号：US14451510

    申请日：2014-08-05

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

    IPC: G11C11/16 ,  H01L43/14 ,  G11C11/18

    CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

    Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

    Abstract translation: 系统和方法涉及包括混合巨型旋转霍尔效应（GSHE） - 旋转转矩（STT）磁阻随机存取存储器（MRAM）元件的存储元件，其包括形成在第一端子（A）和第二端子 第二端子（B）和磁性隧道结（MTJ），具有与GSHE条带接合的MTJ的自由层和耦合到第三端子（C）的MTJ的固定层。 自由层的容易轴的取向垂直于通过在第一端子和第二端子之间穿过GSHE带的电子产生的磁化，使得MTJ的自由层被配置为基于注入的第一充电电流来切换 从第一端子到第二端子和从第二端子到第一端子的第二充电电流经由第三端子（C）通过第三端子注入/提取出MTJ的第二充电电流。

    Three-phase GSHE-MTJ non-volatile flip-flop
    10.
    发明授权
    Three-phase GSHE-MTJ non-volatile flip-flop 有权
    三相GSHE-MTJ非易失性触发器

    公开(公告)号：US09384812B2

    公开(公告)日：2016-07-05

    申请号：US14498336

    申请日：2014-09-26

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

    IPC: G11C11/18 ,  G11C11/16 ,  H03K3/356 ,  H03K3/3562 ,  H03K3/45 ,  G11C11/155 ,  G11C14/00

    CPC classification number: G11C11/1693 ,  G11C11/155 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C14/0081 ,  H03K3/356008 ,  H03K3/35625 ,  H03K3/45

    Abstract: Systems and methods are directed to a three-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, with a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter cross-coupled with a second inverter. A first data value is read out from the slave stage during a read phase of the same clock cycle that a second data value is written into the master stage during a write phase. The three-phase NVFF includes three control signals, for controlling an initialization phase of the slave stage, the read phase, and the write phase.

    Abstract translation: 系统和方法涉及三相非易失性触发器（NVFF），其包括由双巨型旋转霍尔效应（GSHE） - 磁性隧道结（MTJ）结构形成的主级，其具有第一GSHE- MTJ和耦合在第一组合终端和第二组合终端之间的第二GSHE-MTJ，以及由与第二逆变器交叉耦合的第一反相器形成的从级。 在写入阶段期间，将第二数据值写入主级的相同时钟周期的读取阶段，从从属级读出第一数据值。 三相NVFF包括三个控制信号，用于控制从站的初始化阶段，读取阶段和写入阶段。

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