公开(公告)号：US09495899B2

公开(公告)日：2016-11-15

申请号：US14036526

申请日：2013-09-25

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

IPC: H04B5/00 ,  H01L43/00 ,  G09G3/20 ,  H01L43/08 ,  H01L27/22

CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

公开(公告)号：US09324402B2

公开(公告)日：2016-04-26

申请号：US14479832

申请日：2014-09-08

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: G11C11/16 ,  H01L43/14 ,  G11C11/18

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

公开(公告)号：US09230627B2

公开(公告)日：2016-01-05

申请号：US14451510

申请日：2014-08-05

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: G11C11/16 ,  H01L43/14 ,  G11C11/18

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

Abstract translation: 系统和方法涉及包括混合巨型旋转霍尔效应（GSHE） - 旋转转矩（STT）磁阻随机存取存储器（MRAM）元件的存储元件，其包括形成在第一端子（A）和第二端子 第二端子（B）和磁性隧道结（MTJ），具有与GSHE条带接合的MTJ的自由层和耦合到第三端子（C）的MTJ的固定层。 自由层的容易轴的取向垂直于通过在第一端子和第二端子之间穿过GSHE带的电子产生的磁化，使得MTJ的自由层被配置为基于注入的第一充电电流来切换 从第一端子到第二端子和从第二端子到第一端子的第二充电电流经由第三端子（C）通过第三端子注入/提取出MTJ的第二充电电流。

公开(公告)号：US09882609B2

公开(公告)日：2018-01-30

申请号：US15280119

申请日：2016-09-29

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

IPC: H04B5/00 ,  G09G3/20 ,  H01L43/08 ,  H01L27/22 ,  H04W4/00

CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

公开(公告)号：US09147454B2

公开(公告)日：2015-09-29

申请号：US13792440

申请日：2013-03-11

Applicant: QUALCOMM Incorporated

Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

IPC: G11C11/02 ,  G11C11/16 ,  G11C14/00 ,  H03K3/037

CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

公开(公告)号：US20140198563A1

公开(公告)日：2014-07-17

申请号：US13792440

申请日：2013-03-11

Applicant: QUALCOMM INCORPORATED

Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

IPC: G11C11/02

CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

公开(公告)号：US20140108478A1

公开(公告)日：2014-04-17

申请号：US13651954

申请日：2012-10-15

Applicant: QUALCOMM INCORPORATED

Inventor： Kangho Lee ,  Taehyun Kim ,  Xiaochun Zhu ,  David M. Jacobson ,  Raghu Sagar Madala ,  Wenqing Wu ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。

公开(公告)号：US20170019153A1

公开(公告)日：2017-01-19

申请号：US15280119

申请日：2016-09-29

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Senthil Kumar Govindaswamy ,  Raghu Sagar Madala ,  Peiyuan Wang ,  Kendrick Hoy Leong Yuen ,  David Joseph Winston Hansquine

IPC: H04B5/00 ,  H04W4/00

CPC classification number: H04B5/0031 ,  G09G3/2096 ,  G09G2370/16 ,  H01L27/22 ,  H01L43/08 ,  H04B5/0087 ,  H04W4/80

Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

Abstract translation: 本文描述的实施例涉及非接触式数据通信。 本文公开了用于非接触式数据通信的相关系统和方法。 例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。 为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。 可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

公开(公告)号：US20150145576A1

公开(公告)日：2015-05-28

申请号：US14331688

申请日：2014-07-15

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi ,  Robert Philip Gilmore

IPC: H03K3/45 ,  H03K19/20 ,  H03K3/012 ,  H03K3/037

CPC classification number: H03K3/45 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08 ,  H03K19/18 ,  H03K19/20

Abstract: Aspects described herein are related to pipeline circuits employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a pipeline circuit is disclosed. The pipeline circuit includes a first pipeline stage and a second pipeline stage. The first pipeline stage is configured to store a first bit set and to generate a first charge current representing the first bit set. The second pipeline stage includes a first GSHE MTJ element. The first GSHE MTJ element is configured to set a first bit state for the first logical operation, and has a first threshold current level. The first GSHE MTJ element is configured to generate a first GSHE spin current in response to the first charge current. In this manner, the first GSHE MTJ element is also configured to perform the first logical operation on the first bit set.

Abstract translation: 本文描述的方面涉及采用用于执行逻辑操作的巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件的流水线电路。 一方面，公开了一种流水线电路。 管线电路包括第一流水线阶段和第二流水线阶段。 第一流水线级被配置为存储第一位集合并且生成表示第一位组的第一充电电流。 第二流水线级包括第一GSHE MTJ元件。 第一GSHE MTJ元件被配置为设置第一逻辑运算的第一位状态，并且具有第一阈值电流电平。 第一GSHE MTJ元件被配置为响应于第一充电电流产生第一GSHE自旋电流。 以这种方式，第一GSHE MTJ元件还被配置为对第一位集执行第一逻辑运算。

公开(公告)号：US09164729B2

公开(公告)日：2015-10-20

申请号：US13759130

申请日：2013-02-05

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

IPC: G06F7/58

CPC classification number: G06F7/58 ,  G06F7/588

Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。