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公开(公告)号：US09870811B2
公开(公告)日：2018-01-16
申请号：US15185441
申请日：2016-06-17
Applicant: QUALCOMM Incorporated
Inventor： Peiyuan Wang , Jung Pill Kim , Jimmy Jianan Kan , Chando Park , Seung Kang
CPC classification number: G11C11/1675 , G11C7/20 , G11C11/1693 , G11C11/1695 , G11C14/0081
Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.
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2.发明授权Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) 有权降低自旋转矩磁阻随机存取存储器（STT-MRAM）中的源负载效应公开(公告)号：US09368715B2
公开(公告)日：2016-06-14
申请号：US14822295
申请日：2015-08-10
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Seung Kang , Xiaochun Zhu
CPC classification number: H01L43/08 , G06F17/5068 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/12
Abstract: A memory cell includes a magnetic tunnel junction (MTJ) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. The pinned layer has a physical dimension to produce an offset magnetic field corresponding to a first switching current of the MTJ structure to enable switching between the first state and the second state when a first voltage is applied from the bit line to a source line coupled to an access transistor and a second switching current to enable switching between the second state and the first state when the first voltage is applied from the source line to the bit line.
Abstract translation: 存储单元包括磁隧道结（MTJ）结构，其包括耦合到位线和被钉扎层的自由层。 自由层的磁矩基本上平行于处于第一状态的被钉扎层的磁矩，并且在第二状态下基本上与销钉层的磁矩反平行。 固定层具有物理尺寸以产生对应于MTJ结构的第一开关电流的偏移磁场，以便当第一电压从位线施加到耦合到第一状态的源极线时，能够在第一状态和第二状态之间切换 存取晶体管和第二开关电流，以便当第一电压从源极线施加到位线时，能够在第二状态和第一状态之间切换。
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公开(公告)号：US10249814B1
公开(公告)日：2019-04-02
申请号：US15947660
申请日：2018-04-06
Applicant: QUALCOMM Incorporated
Inventor： Chando Park , Seung Kang , Sungryul Kim , Wei-Chuan Chen
Abstract: Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.
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Patent Agency Ranking
公开(公告)号：US20160005959A1
公开(公告)日：2016-01-07
申请号：US14851800
申请日：2015-09-11
Applicant: QUALCOMM Incorporated
Inventor： Xia Li , Seung Kang , Xiaochun Zhu
Abstract: In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle.
Abstract translation: 在一个具体实施例中，公开了一种包括耦合到第一电极的第一电极和磁隧道结（MTJ）结构的装置。 第二电极耦合到MTJ结构，第二电极具有第一侧壁。 间隔层耦合到第一电极，第二电极的第一侧壁和MTJ结构的侧壁。 第三电极耦合到第二电极，其中第二电极的第一侧壁以直角接触第三电极的底表面。
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公开(公告)号：US20170365316A1
公开(公告)日：2017-12-21
申请号：US15185441
申请日：2016-06-17
Applicant: QUALCOMM Incorporated
Inventor： Peiyuan Wang , Jung Pill Kim , Jimmy Jianan Kan , Chando Park , Seung Kang
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C7/20 , G11C11/1693 , G11C11/1695 , G11C14/0081
Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.
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6.发明申请REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY (STT-MRAM) 有权旋转扭矩传递磁阻随机存取存储器（STT-MRAM）减少源装载效应公开(公告)号：US20150349244A1
公开(公告)日：2015-12-03
申请号：US14822295
申请日：2015-08-10
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Seung Kang , Xiaochun Zhu
CPC classification number: H01L43/08 , G06F17/5068 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/12
Abstract: A memory cell includes a magnetic tunnel junction (MTJ) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. The pinned layer has a physical dimension to produce an offset magnetic field corresponding to a first switching current of the MTJ structure to enable switching between the first state and the second state when a first voltage is applied from the bit line to a source line coupled to an access transistor and a second switching current to enable switching between the second state and the first state when the first voltage is applied from the source line to the bit line.
Abstract translation: 存储单元包括磁隧道结（MTJ）结构，其包括耦合到位线和被钉扎层的自由层。 自由层的磁矩基本上平行于处于第一状态的被钉扎层的磁矩，并且在第二状态下基本上与销钉层的磁矩反平行。 固定层具有物理尺寸以产生对应于MTJ结构的第一开关电流的偏移磁场，以便当第一电压从位线施加到耦合到第一状态的源极线时，能够在第一状态和第二状态之间切换 存取晶体管和第二开关电流，以便当第一电压从源极线施加到位线时，能够在第二状态和第一状态之间切换。
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公开(公告)号：US09548445B2
公开(公告)日：2017-01-17
申请号：US14940996
申请日：2015-11-13
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Wei-Chuan Chen , Seung Kang
CPC classification number: H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Abstract translation: 垂直磁隧道结（MTJ）装置包括沉积在隧道势垒层和参考层之间的隧道磁阻（TMR）增强缓冲层。 在TMR增强缓冲层和参考层之间沉积非晶合金间隔物以增强TMR。 非晶合金间隔物阻挡面心立方（fcc）取向钉扎层的模板效应，并且在钉扎层和TMR增强缓冲层之间提供强耦合，以确保完全垂直磁化。
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公开(公告)号：US20160111634A1
公开(公告)日：2016-04-21
申请号：US14940996
申请日：2015-11-13
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Wei-Chuan Chen , Seung Kang
CPC classification number: H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Abstract translation: 垂直磁隧道结（MTJ）装置包括沉积在隧道势垒层和参考层之间的隧道磁阻（TMR）增强缓冲层。 在TMR增强缓冲层和参考层之间沉积非晶合金间隔物以增强TMR。 非晶合金间隔物阻挡面心立方（fcc）取向钉扎层的模板效应，并且在钉扎层和TMR增强缓冲层之间提供强耦合，以确保完全垂直磁化。
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