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公开(公告)号：US20140108478A1
公开(公告)日：2014-04-17
申请号：US13651954
申请日：2012-10-15
Applicant: QUALCOMM INCORPORATED
Inventor： Kangho Lee , Taehyun Kim , Xiaochun Zhu , David M. Jacobson , Raghu Sagar Madala , Wenqing Wu , Jung Pill Kim , Seung H. Kang
IPC: G06F7/58
CPC classification number: G06F7/588
Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.
Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。
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公开(公告)号：US20140027869A1
公开(公告)日：2014-01-30
申请号：US13770526
申请日：2013-02-19
Applicant: QUALCOMM INCORPORATED
Inventor： Kangho Lee , Wei-Chuan Chen , Seung H. Kang
CPC classification number: H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Abstract translation: 垂直磁隧道结（MTJ）装置包括沉积在隧道势垒层和参考层之间的隧道磁阻（TMR）增强缓冲层。在TMR增强缓冲层和参考层之间沉积非晶合金间隔物以增强TMR非晶态 合金间隔块阻挡面心立方（fcc）取向钉扎层的模板效应，并且在钉扎层和TMR增强缓冲层之间提供强耦合，以确保完全垂直磁化。
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13.发明申请REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY (STT-MRAM) 有权旋转扭矩传递磁阻随机存取存储器（STT-MRAM）减少源装载效应公开(公告)号：US20140015077A1
公开(公告)日：2014-01-16
申请号：US14027503
申请日：2013-09-16
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Seung H. Kang , Xiaochun Zhu
IPC: H01L43/02
CPC classification number: H01L43/08 , G06F17/5068 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/12
Abstract: A memory cell comprises a magnetic tunnel junction (MTJ) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. The pinned layer has a physical dimension to produce an offset magnetic field corresponding to a first switching current of the MTJ structure to enable switching between the first state and the second state when a first voltage is applied from the bit line to a source line coupled to an access transistor and a second switching current to enable switching between the second state and the first state when the first voltage is applied from the source line to the bit line.
Abstract translation: 存储单元包括磁隧道结（MTJ）结构，其包括耦合到位线和固定层的自由层。 自由层的磁矩基本上平行于处于第一状态的被钉扎层的磁矩，并且在第二状态下基本上与销钉层的磁矩反平行。 固定层具有物理尺寸以产生对应于MTJ结构的第一开关电流的偏移磁场，以便当第一电压从位线施加到耦合到第一状态的源极线时，能够在第一状态和第二状态之间切换 存取晶体管和第二开关电流，以便当第一电压从源极线施加到位线时，能够在第二状态和第一状态之间切换。
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14.发明申请NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION 有权在具有第一磁性隧道连接和第二磁性隧道接头的位置处的不可逆状态公开(公告)号：US20140010006A1
公开(公告)日：2014-01-09
申请号：US14022364
申请日：2013-09-10
Applicant: QUALCOMM Incorporated
Inventor： Hari M. Rao , Jung Pill Kim , Seung H. Kang , Xiaochun Zhu , Taehyun Kim , Kangho Lee , Xia Li , Wah Nam Hsu , Wuyang Hao , Jungwon Suh , Nicholas K. Yu , Matthew M. Nowak , Steven M. Millendorf , Asaf Ashkenazi
IPC: G11C11/14
CPC classification number: G11C11/16 , G11C11/14 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C17/02 , G11C17/16 , G11C29/027
Abstract: A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
Abstract translation: 存储器件包括磁性隧道结（MTJ）位单元。 MTJ位单元包括第一MTJ和第二MTJ。 存储器件还包括编程电路，其被配置为通过将程序信号施加到位单元的第一MTJ和第二MTJ中的所选择的一个来在位单元处产生不可逆状态。 不可逆状态对应于通过比较在第一MTJ读取的第一值和在第二MTJ读取的第二值确定的MTJ比特单元的值。
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15.发明授权Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials 有权制造具有均匀结晶纹理的光滑种子层用于高垂直磁各向异性材料的方法公开(公告)号：US09595666B2
公开(公告)日：2017-03-14
申请号：US15173567
申请日：2016-06-03
Applicant: QUALCOMM INCORPORATED
Inventor： Matthias Georg Gottwald , Jimmy Kan , Kangho Lee , Chando Park , Seung Hyuk Kang
CPC classification number: H01L43/12 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.
Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。
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Patent Agency Ranking
公开(公告)号：US09570509B2
公开(公告)日：2017-02-14
申请号：US14609169
申请日：2015-01-29
Applicant: QUALCOMM Incorporated
Inventor： Vladimir Machkaoutsan , Matthias Georg Gottwald , Mustafa Badaroglu , Jimmy Kan , Kangho Lee , Yu Lu , Chando Park
CPC classification number: H01L43/12 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.
Abstract translation: 半导体器件包括第一磁隧道结（MTJ）器件，第二MTJ器件和顶电极。 第一MTJ装置包括阻挡层。 第二MTJ装置包括阻挡层。 顶部电极耦合到第一MTJ装置和第二MTJ装置。
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17.发明授权Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) 有权用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（P-MTJ）公开(公告)号：US09548446B2
公开(公告)日：2017-01-17
申请号：US15133018
申请日：2016-04-19
Applicant: QUALCOMM Incorporated
Inventor： Chando Park , Matthias Georg Gottwald , Kangho Lee , Seung Hyuk Kang
CPC classification number: H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。
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公开(公告)号：US09548445B2
公开(公告)日：2017-01-17
申请号：US14940996
申请日：2015-11-13
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Wei-Chuan Chen , Seung Kang
CPC classification number: H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Abstract translation: 垂直磁隧道结（MTJ）装置包括沉积在隧道势垒层和参考层之间的隧道磁阻（TMR）增强缓冲层。 在TMR增强缓冲层和参考层之间沉积非晶合金间隔物以增强TMR。 非晶合金间隔物阻挡面心立方（fcc）取向钉扎层的模板效应，并且在钉扎层和TMR增强缓冲层之间提供强耦合，以确保完全垂直磁化。
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19.发明授权Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) 有权用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（p-MTJ）公开(公告)号：US09324939B2
公开(公告)日：2016-04-26
申请号：US14321516
申请日：2014-07-01
Applicant: QUALCOMM Incorporated
Inventor： Chando Park , Matthias Georg Gottwald , Kangho Lee , Seung Hyuk Kang
CPC classification number: H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。
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公开(公告)号：US20160111634A1
公开(公告)日：2016-04-21
申请号：US14940996
申请日：2015-11-13
Applicant: QUALCOMM Incorporated
Inventor： Kangho Lee , Wei-Chuan Chen , Seung Kang
CPC classification number: H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Abstract translation: 垂直磁隧道结（MTJ）装置包括沉积在隧道势垒层和参考层之间的隧道磁阻（TMR）增强缓冲层。 在TMR增强缓冲层和参考层之间沉积非晶合金间隔物以增强TMR。 非晶合金间隔物阻挡面心立方（fcc）取向钉扎层的模板效应，并且在钉扎层和TMR增强缓冲层之间提供强耦合，以确保完全垂直磁化。
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