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    MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFICIENT SPIN-TORQUE-TRANSFER (STT) MAGNETIC RANDOM ACCESS MEMORY (MRAM) (STT MRAM)
    1.
    发明申请
    MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFICIENT SPIN-TORQUE-TRANSFER (STT) MAGNETIC RANDOM ACCESS MEMORY (MRAM) (STT MRAM) 审中-公开
    磁性隧道结（MTJ）特别适用于有效的转子转矩（STT）磁性随机存取存储器（MRAM）（STT MRAM）

    公开(公告)号：US20170077387A1

    公开(公告)日：2017-03-16

    申请号：US14856372

    申请日：2015-09-16

    Applicant: QUALCOMM Incorporated

    Inventor： Jimmy Jianan Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Chando Park ,  Seung Hyuk Kang

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L43/12 ,  H01F10/3263 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

    Abstract: Magnetic Tunnel Junction (MTJ) devices particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer provided below a tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer provided below the TMR bather layer includes one pinned layer magnetized in only one magnetic orientation. In another aspect, a second pinned layer and a spacer layer are provided above a free layer and the TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel to that of the first pinned layer. In yet another aspect, a giant magneto-resistance (GMR) spacer layer is provided as the spacer layer between the second pinned layer and the free layer in the MTJ.

    Abstract translation: 公开了特别适用于高效自旋转矩传递（STT）磁随机存取存储器（MRAM）（STT MRAM）的磁隧道结（MTJ）装置。 在一个方面，提供了一种在隧道磁阻（TMR）阻挡层下方提供具有减小厚度的第一固定层的MTJ结构。 在TMR沐浴层下面提供的第一被钉扎层包括仅以一个磁性取向磁化的一个钉扎层。 在另一方面，第二被钉扎层和间隔层设置在自由层上方和MTJ中的TMR阻挡层之上。 第二被钉扎层被磁化成与第一被钉扎层反平行的磁取向。 在另一方面，提供巨磁电阻（GMR）间隔层作为MTJ中的第二被钉扎层和自由层之间的间隔层。

    REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION
    4.
    发明申请
    REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION 有权
    普通磁性非线性磁性隧道结的参考层

    公开(公告)号：US20150263266A1

    公开(公告)日：2015-09-17

    申请号：US14460731

    申请日：2014-08-15

    Applicant: QUALCOMM Incorporated

    Inventor： Matthias Georg Gottwald ,  Chando Park ,  Xiaochun Zhu ,  Kangho Lee ,  Seung Hyuk Kang

    IPC: H01L43/08 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

    Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

    Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 第二层被配置为在pMTJ器件的操作期间反铁磁（AF）耦合第一层和第三层。

    Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
    8.
    发明授权
    Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction 有权
    垂直磁各向异性磁隧道结的参考层

    公开(公告)号：US09583696B2

    公开(公告)日：2017-02-28

    申请号：US14460731

    申请日：2014-08-15

    Applicant: QUALCOMM Incorporated

    Inventor： Matthias Georg Gottwald ,  Chando Park ,  Xiaochun Zhu ,  Kangho Lee ,  Seung Hyuk Kang

    IPC: G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

    Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

    Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 第二层被配置为在pMTJ器件的操作期间反铁磁（AF）耦合第一层和第三层。

    Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication
    9.
    发明授权
    Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication 有权
    用于垂直磁隧道结装置的短路径的氧化镁封盖及其制造方法

    公开(公告)号：US09444035B2

    公开(公告)日：2016-09-13

    申请号：US14483104

    申请日：2014-09-10

    Applicant: QUALCOMM Incorporated

    Inventor： Chando Park ,  Kangho Lee ,  Jimmy Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Seung Hyuk Kang

    IPC: H01L29/82 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

    Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

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