公开(公告)号：US09628052B2

公开(公告)日：2017-04-18

申请号：US14249189

申请日：2014-04-09

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H01L23/50 ,  H03K3/013 ,  H05K1/18 ,  H05K1/03 ,  H05K3/46 ,  G05F3/08 ,  H05K3/30 ,  H01L23/498 ,  H01L23/00

CPC classification number: H03K3/013 ,  G05F3/08 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/15311 ,  H05K1/0306 ,  H05K1/183 ,  H05K1/184 ,  H05K3/306 ,  H05K3/4697 ,  H05K2201/10015 ,  Y10T29/49139 ,  H01L2924/00

Abstract: An embedded multi-terminal capacitor embedded in a substrate cavity includes at least one metal layer patterned into a plurality of power rails and a plurality of ground rails. The substrate includes an external power network.

公开(公告)号：US09596768B2

公开(公告)日：2017-03-14

申请号：US14196481

申请日：2014-03-04

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Jae Sik Lee ,  Shiqun Gu

IPC: H05K3/42 ,  H05K1/03 ,  H05K1/11 ,  H05K3/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/48

CPC classification number: H05K3/426 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/18 ,  H05K1/0306 ,  H05K1/0313 ,  H05K1/111 ,  H05K1/115 ,  H05K3/0094

Abstract: A substrate includes a plurality of vias that are lined with dielectric polymer having a substantially uniform thickness. This substantial uniform thickness provides a lumen within each dielectric-polymer-layer-lined via that is substantially centered within the via. Subsequent deposition of metal into the lumen for each dielectric-polymer-layer-lined via thus provides conductive vias having substantially centered metal conductors.

Abstract translation: 衬底包括多个具有基本上均匀厚度的介电聚合物的通孔。 这个基本上均匀的厚度提供了在每个介质聚合物层衬里的通孔内的管腔，其基本上位于通孔内。 因此，随后将金属沉积到每个介质聚合物层衬里的通孔的内腔中，由此提供具有基本中心的金属导体的导电通孔。

公开(公告)号：US09490226B2

公开(公告)日：2016-11-08

申请号：US14462265

申请日：2014-08-18

Applicant: QUALCOMM Incorporated

Inventor： Young Kyu Song ,  Hong Bok We ,  Dong Wook Kim ,  Kyu-Pyung Hwang

IPC: H01L23/52 ,  H01L23/00 ,  H01L23/34 ,  H01L23/373 ,  H01L23/498 ,  H01L21/48 ,  H05K1/02

CPC classification number: H01L24/17 ,  H01L21/4857 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/10175 ,  H01L2224/131 ,  H01L2224/16111 ,  H01L2224/16112 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/17519 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83104 ,  H05K1/0207 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Provided herein is an integrated device that includes a substrate, a die, a heat-dissipation layer located between the substrate and the die, and a first interconnect configured to couple the die to the heat-dissipation layer. The heat-dissipation layer may be configured to provide an electrical path for a ground signal. The first interconnect may be further configured to conduct heat from the die to the heat-dissipation layer. The integrated device may also include a second interconnect configured to couple the die to the substrate. The second interconnect may be further configured to conduct a power signal between the die and the substrate. The integrated device may also include a dielectric layer located between the heat-dissipation layer and the substrate, and a solder-resist layer located between the die and the heat-dissipation layer.

Abstract translation: 本文提供了一种集成器件，其包括衬底，管芯，位于衬底和管芯之间的散热层和被配置为将管芯耦合到散热层的第一互连。 散热层可以被配置成为接地信号提供电路径。 第一互连可以被进一步配置成将热量从管芯传导到散热层。 集成器件还可以包括配置成将管芯耦合到衬底的第二互连。 第二互连可以被进一步配置为在管芯和衬底之间传导功率信号。 集成器件还可以包括位于散热层和衬底之间的介电层，以及位于管芯和散热层之间的阻焊层。

公开(公告)号：US09368450B1

公开(公告)日：2016-06-14

申请号：US14832363

申请日：2015-08-21

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Hong Bok We ,  Jae Sik Lee ,  Dong Wook Kim

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/538

CPC classification number: H01L23/5385 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/92 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00014

Abstract: An integrated device package includes a first die, a second die, an encapsulation portion coupled to the first die and the second die, and a redistribution portion coupled to the encapsulation portion. The encapsulation portion includes an encapsulation layer, a bridge, and a first via. The bridge is at least partially embedded in the encapsulation layer. The bridge is configured to provide a first electrical path for a first signal between the first die and the second die. The first via is in the encapsulation layer. The first via is coupled to the bridge. The first via and the bridge are configured to provide a second electrical path for a second signal to the first die. The redistribution portion includes at least one dielectric layer, and at least one interconnect, in the dielectric layer, coupled to the first via.

Abstract translation: 集成器件封装包括第一管芯，第二管芯，耦合到第一管芯和第二管芯的封装部分，以及耦合到封装部分的再分配部分。 封装部分包括封装层，桥和第一通孔。 该桥至少部分地嵌入在封装层中。 桥被配置成为第一管芯和第二管芯之间的第一信号提供第一电路径。 第一个通道在封装层中。 第一个通道耦合到桥。 第一通孔和桥被配置为为第一模具提供第二信号的第二电路径。 再分配部分包括耦合到第一通孔的介电层中的至少一个电介质层和至少一个互连。

公开(公告)号：US09335384B2

公开(公告)日：2016-05-10

申请号：US14037142

申请日：2013-09-25

Applicant: QUALCOMM Incorporated

Inventor： Kyu-Pyung Hwang ,  Young K. Song ,  Dong Wook Kim ,  Changhan Hobie Yun

IPC: G01R33/02 ,  G01R29/08

CPC classification number: G01R33/02 ,  G01R29/0814

Abstract: A method and apparatus for testing near field magnetic fields of electronic devices. The method comprises measuring a magnetic field using a loop antenna that is oriented in a first direction. The loop antenna is swept through a desired range of azimuth angles while measuring the magnetic field. Once the first direction testing is completed, the loop antenna is changed to a second orientation direction. The magnetic field is then measured in the second orientation direction and is swept through a desired range of orientation angles in the second direction. The apparatus provides a loop antenna connected to a coaxial probe, with the coaxial cable serving as the center conductor, and two outer conductors. An axle is mounted to the loop antenna and connected to a step motor. A servo motor is also provided for moving the arm assembly.

Abstract translation: 一种用于测试电子设备的近场磁场的方法和装置。 该方法包括使用在第一方向上定向的环形天线来测量磁场。 在测量磁场的同时，将环形天线扫过所需的方位角范围。 一旦第一方向测试完成，环形天线就变成第二定位方向。 然后在第二取向方向上测量磁场，并且扫过第二方向上所需的取向角范围。 该装置提供连接到同轴探针的环形天线，同轴电缆用作中心导体和两个外部导体。 轴安装在环形天线上，并连接到步进电机。 还提供用于移动臂组件的伺服电动机。

公开(公告)号：US20160013125A1

公开(公告)日：2016-01-14

申请号：US14329646

申请日：2014-07-11

Applicant: QUALCOMM INCORPORATED

Inventor： Dong Wook Kim ,  Young Kyu Song ,  Kyu-Pyung Hwang ,  Hong Bok We

IPC: H01L23/498 ,  H05K3/28 ,  H05K3/46 ,  H01L21/48 ,  H05K1/02

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5389 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/19107 ,  H05K1/0298 ,  H05K3/284 ,  H05K3/46 ,  H05K2203/1316

Abstract: Some novel features pertain to an integrated device that includes a substrate, a first interconnect coupled to the substrate, and a second interconnect surrounding the first interconnect. The second interconnect may be configured to provide an electrical connection to ground. In some implementations, the second interconnect includes a plate. In some implementations, the integrated device also includes a dielectric material between the first interconnect and the second interconnect. In some implementations, the integrated device also includes a mold surrounding the second interconnect. In some implementations, the first interconnect is configured to conduct a power signal in a first direction. In some implementations, the second interconnect is configured to conduct a grounding signal in a second direction. In some implementations, the second direction is different from the first direction. In some implementations, the integrated device may be a package-on-package (PoP) device.

Abstract translation: 一些新颖的特征涉及包括衬底，耦合到衬底的第一互连和围绕第一互连的第二互连的集成器件。 第二互连可以被配置为提供到地的电连接。 在一些实现中，第二互连包括板。 在一些实施方案中，集成器件还包括在第一互连和第二互连之间的介电材料。 在一些实施方案中，集成装置还包括围绕第二互连的模具。 在一些实现中，第一互连被配置为在第一方向上传导功率信号。 在一些实现中，第二互连被配置为在第二方向上传导接地信号。 在一些实施方式中，第二方向与第一方向不同。 在一些实施方式中，集成器件可以是封装封装（PoP）器件。

公开(公告)号：US20150318262A1

公开(公告)日：2015-11-05

申请号：US14324136

申请日：2014-07-04

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Ratibor Radojcic ,  Dong Wook Kim ,  Jae Sik Lee

IPC: H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L23/48 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L21/568 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/145 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/171 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81895 ,  H01L2224/81896 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/1434 ,  H01L2924/1517 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/18161 ,  H05K3/4688 ,  H01L2924/014

Abstract: Some novel features pertain to an integrated device (e.g., integrated package) that includes a base portion for the integrated device, a first die (e.g., first wafer level die), and a second die (e.g., second wafer level die). The base portion includes a first inorganic dielectric layer, a first set of interconnects located in the first inorganic dielectric layer, a second dielectric layer different from the first inorganic dielectric layer, and a set of redistribution metal layers in the second dielectric layer. The first die is coupled to a first surface of the base portion. The second die is coupled to the first surface of the base portion, the second die is electrically coupled to the first die through the first set of interconnects.

Abstract translation: 一些新颖的特征涉及集成器件（例如，集成封装），其包括用于集成器件的基底部分，第一管芯（例如，第一晶片级管芯）和第二管芯（例如，第二晶片级管芯）。 基部包括第一无机电介质层，位于第一无机电介质层中的第一组互连，不同于第一无机介电层的第二电介质层和第二介电层中的一组再分布金属层。 第一管芯耦合到基部的第一表面。 第二管芯耦合到基部的第一表面，第二管芯通过第一组互连件电耦合到第一管芯。

公开(公告)号：US20150311275A1

公开(公告)日：2015-10-29

申请号：US14791164

申请日：2015-07-02

Applicant: QUALCOMM Incorporated

Inventor： Young Kyu Song ,  Kyu-Pyung Hwang ,  Dong Wook Kim ,  Changhan Hobie Yun

IPC: H01L49/02 ,  H01L23/498 ,  H01G4/012 ,  H01G4/30 ,  H01G4/12 ,  H01L21/48 ,  H01L23/522

CPC classification number: H01L28/40 ,  H01G2/06 ,  H01G4/012 ,  H01G4/12 ,  H01G4/1227 ,  H01G4/30 ,  H01G4/306 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/16 ,  H01L27/0805 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16267 ,  H01L2224/81815 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/014

Abstract: A multilayer capacitor is provided that includes a plurality of vias configured to receive interconnects from a die.

公开(公告)号：US09151779B2

公开(公告)日：2015-10-06

申请号：US13675673

申请日：2012-11-13

Applicant: QUALCOMM Incorporated

Inventor： Kyu-Pyung Hwang ,  Young K Song ,  Changhan Hobie Yun ,  Dong Wook Kim

IPC: G01R31/00 ,  G01R1/07

CPC classification number: G01R1/07 ,  G01R31/002

Abstract: Systems and methods for EMC, EMI and ESD testing are described. A probe comprises a center conductor extending along an axis of the probe, a probe tip, and a shield coaxially aligned with the center conductor and configured to provide electromagnetic screening for the probe tip. One or more actuators may change the relative positions of the probe tip and shield with respect to a device under test, thereby enabling control of sensitivity and resolution of the probe.

Abstract translation: 描述了用于EMC，EMI和ESD测试的系统和方法。 探针包括沿着探针的轴线延伸的中心导体，探针尖端和与中心导体同轴对准的屏蔽并且被配置为为探针尖端提供电磁屏蔽。 一个或多个致动器可以相对于被测器件改变探头尖端和屏蔽件的相对位置，从而能够控制探头的灵敏度和分辨率。

公开(公告)号：US20150235991A1

公开(公告)日：2015-08-20

申请号：US14254494

申请日：2014-04-16

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Ratibor Radojcic ,  Dong Wook Kim

IPC: H01L25/065 ,  H05K1/11 ,  H01L23/00 ,  H05K1/09 ,  H01L23/31 ,  H01L23/522

CPC classification number: H01L25/0655 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/145 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/17 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/1712 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18161 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09845 ,  H05K2201/10242 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2924/00

Abstract: A bottom package substrate is provided that includes a plurality of metal posts that electrically couple through a die-side redistribution layer to a plurality of die interconnects. The metal posts and the die interconnects are plated onto a seed layer on the bottom package substrate.

Abstract translation: 提供了底部封装基板，其包括多个金属柱，其通过裸片侧再分配层电耦合到多个管芯互连。 金属柱和管芯互连电镀在底部封装衬底上的晶种层上。