公开(公告)号：US11437470B2

公开(公告)日：2022-09-06

申请号：US16415365

申请日：2019-05-17

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Rudolf Elpelt ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L29/78 ,  H01L29/04 ,  H01L29/80

Abstract: The disclosure relates to a semiconductor component having an SiC semiconductor body and a first load terminal on a first surface of the SiC semiconductor body. A second load terminal is formed on a second surface of the SiC semiconductor body opposite the first surface. The semiconductor component has a drift zone of a first conductivity type in the SiC semiconductor body and a first semiconductor area of a second conductivity type which is electrically connected to the first load terminal. A pn junction between the drift zone and the first semiconductor area defines a voltage blocking strength of the semiconductor component.

公开(公告)号：US11410989B2

公开(公告)日：2022-08-09

申请号：US16844674

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler ,  Philip Christoph Brandt ,  Maria Cotorogea

IPC: H01L29/861 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L27/02 ,  H01L29/40 ,  H03K17/082 ,  H01L29/08

Abstract: A semiconductor device is operable a forward current mode and a reverse current mode and comprises a semiconductor region, and a controllable charge carrier injector, and a gate. A method includes detecting, in the reverse current mode, if the present load current in the reversed direction does not exceed a threshold value, providing a gate signal such that the gate electrode causes the charge carrier injector to induce a first charge carrier density within the semiconductor region so as to conduct a nominal load current in the reverse direction; if the present load current in the reverse direction does exceed the threshold value, operating the semiconductor device in an overload state by providing the gate signal with a voltage that causes the semiconductor region to conduct an overload current in the reverse direction, wherein the second charge carrier density is higher than the first charge carrier density.

公开(公告)号：US11367683B2

公开(公告)日：2022-06-21

申请号：US16453222

申请日：2019-06-26

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Ravi Keshav Joshi ,  Ralf Siemieniec ,  Thomas Basler ,  Martin Gruber ,  Jochen Hilsenbeck ,  Dethard Peters ,  Roland Rupp ,  Wolfgang Scholz

IPC: H01L23/532 ,  H01L29/16 ,  H01L21/768 ,  H01L23/00 ,  H01L29/45

Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.

公开(公告)号：US20220149156A1

公开(公告)日：2022-05-12

申请号：US17583324

申请日：2022-01-25

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Caspar Leendertz ,  Hans-Joachim Schulze

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/10 ,  H01L29/32 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

Abstract: A semiconductor device includes: a silicon carbide semiconductor body having a source region of a first conductivity type and a body region of a second conductivity type; and a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure having a gate electrode and a gate dielectric. The trench structure is stripe-shaped and runs along a longitudinal direction that is perpendicular to the vertical direction. The source region includes a first source sub-region and a second source sub-region alternately arranged along the longitudinal direction. A doping concentration profile of the first source sub-region along the vertical direction differs from a doping concentration profile of the second source sub-region along the vertical direction. A corresponding method of manufacturing the semiconductor device is also described.

公开(公告)号：US20210050421A1

公开(公告)日：2021-02-18

申请号：US16986338

申请日：2020-08-06

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10

Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.

公开(公告)号：US10200028B2

公开(公告)日：2019-02-05

申请号：US15497290

申请日：2017-04-26

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler

IPC: H03K17/567 ,  H01L29/16 ,  H01L29/417 ,  H01L29/47 ,  H01L29/739 ,  H01L29/861 ,  H01L29/872 ,  H01L29/40 ,  H01L25/07 ,  H01L29/06 ,  H03K17/16 ,  H01L27/07 ,  H02M3/156 ,  H02M5/293 ,  H02M7/217 ,  H02M7/537 ,  H01L29/20 ,  H02M3/158 ,  H02M7/219 ,  H02M7/5387 ,  H02M1/00

Abstract: An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells for desaturation configured to be, under reverse bias, turned on in a desaturation mode and to be turned off in a saturation mode. The rectifying device is electrically connected anti-parallel to the switching device. In a range of a diode forward current from half of a maximum rating diode current of the switching device to the maximum rating diode current, a diode I/V characteristic of the rectifying device shows a voltage drop across the rectifying device higher than a saturation I/V characteristic of the switching device with the transistor cells for desaturation turned off and lower than a desaturation I/V characteristic of the switching device with the transistor cells for desaturation turned on.

公开(公告)号：US20170366180A1

公开(公告)日：2017-12-21

申请号：US15620861

申请日：2017-06-13

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Johannes Georg Laven ,  Thomas Basler

IPC: H03K17/082 ,  H01L29/78 ,  H01L29/16 ,  H01L27/06 ,  H01L29/10 ,  H01L29/06 ,  H01L29/808 ,  H01L29/739

CPC classification number: H03K17/0826 ,  H01L21/8213 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0664 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7805 ,  H01L29/7815 ,  H01L29/8083 ,  H03K17/28

Abstract: An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.

公开(公告)号：US20170345917A1

公开(公告)日：2017-11-30

申请号：US15608137

申请日：2017-05-30

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Roman Baburske ,  Daniel Domes ,  Johannes Georg Laven ,  Roland Rupp

IPC: H01L29/739 ,  H03K17/04 ,  H03K17/567

CPC classification number: H01L29/7393 ,  H01L29/1608 ,  H01L29/7827 ,  H01L2224/49111 ,  H01L2224/49113 ,  H03K17/0406 ,  H03K17/08122 ,  H03K17/08142 ,  H03K17/102 ,  H03K17/127 ,  H03K17/567 ,  H03K2017/6875 ,  H03K2217/0036

Abstract: An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.

公开(公告)号：US20240136406A1

公开(公告)日：2024-04-25

申请号：US18398823

申请日：2023-12-28

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7813

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

公开(公告)号：US20240113026A1

公开(公告)日：2024-04-04

申请号：US18526127

申请日：2023-12-01

Applicant: Infineon Technologies AG

Inventor： Edward Fürgut ,  Ravi Keshav Joshi ,  Thomas Basler ,  Martin Gruber ,  Jochen Hilsenbeck ,  Wolfgang Scholz

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L29/16 ,  H01L29/45

CPC classification number: H01L23/53238 ,  H01L21/7685 ,  H01L24/45 ,  H01L29/1608 ,  H01L29/45 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/05181 ,  H01L2224/05672 ,  H01L2224/05679 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147

Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure, wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer, wherein the metallization layer is configured as a contact pad of the silicon carbide device.