公开(公告)号：US11646258B2

公开(公告)日：2023-05-09

申请号：US16944303

申请日：2020-07-31

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Thomas Basler ,  Reinhold Bayerer ,  Ivan Nikitin

IPC: H01L23/498 ,  H01L23/66 ,  H01L21/56 ,  H01L21/48 ,  H01L23/29

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/293 ,  H01L23/66 ,  H01L2223/6605

Abstract: An electronic device and method is disclosed. In one example, the electronic device includes an electrically insulating material, a first load electrode arranged on a first surface of the electrically insulating material, and a second load electrode arranged on a second surface of the electrically insulating material opposite to the first surface, wherein the load electrodes are separated by the electrically insulating material along the entire length on which the load electrodes have opposite sections, wherein surfaces of the load electrodes facing away from the electrically insulating material are uncovered by the electrically insulating material.

公开(公告)号：US11588048B2

公开(公告)日：2023-02-21

申请号：US17186281

申请日：2021-02-26

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Guenter Eckel ,  Jan Fuhrmann ,  Dethard Peters ,  Florian Stoermer

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/40 ,  H01L29/47

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

公开(公告)号：US20210343835A1

公开(公告)日：2021-11-04

申请号：US17375034

申请日：2021-07-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

公开(公告)号：US10886909B2

公开(公告)日：2021-01-05

申请号：US15620861

申请日：2017-06-13

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Johannes Georg Laven ,  Thomas Basler

IPC: H03K17/00 ,  H03K17/082 ,  H03K17/28 ,  H01L27/088 ,  H01L21/82 ,  H01L29/08 ,  H01L27/06 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L21/8234 ,  H01L29/04

Abstract: An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.

公开(公告)号：US20200243509A1

公开(公告)日：2020-07-30

申请号：US16844674

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler ,  Philip Christoph Brandt ,  Maria Cotorogea

IPC: H01L27/02 ,  H01L29/10 ,  H03K17/082 ,  H01L29/861 ,  H01L29/40 ,  H01L29/739 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06

Abstract: A semiconductor device is operable a forward current mode and a reverse current mode and comprises a semiconductor region, and a controllable charge carrier injector, and a gate. A method includes detecting, in the reverse current mode, if the present load current in the reversed direction does not exceed a threshold value, providing a gate signal such that the gate electrode causes the charge carrier injector to induce a first charge carrier density within the semiconductor region so as to conduct a nominal load current in the reverse direction; if the present load current in the reverse direction does exceed the threshold value, operating the semiconductor device in an overload state by providing the gate signal with a voltage that causes the semiconductor region to conduct an overload current in the reverse direction, wherein the second charge carrier density is higher than the first charge carrier density.

公开(公告)号：US20200013723A1

公开(公告)日：2020-01-09

申请号：US16453222

申请日：2019-06-26

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Ravi Keshav Joshi ,  Ralf Siemieniec ,  Thomas Basler ,  Martin Gruber ,  Jochen Hilsenbeck ,  Dethard Peters ,  Roland Rupp ,  Wolfgang Scholz

IPC: H01L23/532 ,  H01L29/16 ,  H01L29/45 ,  H01L21/768 ,  H01L23/00

Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.

公开(公告)号：US20190259842A1

公开(公告)日：2019-08-22

申请号：US16281257

申请日：2019-02-21

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Joachim Schulze ,  Ralf Siemieniec

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor component includes a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type. A zone of the first conductivity type is formed in a vertical direction between a semiconductor region of a second conductivity type and the drift zone. The zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction.

公开(公告)号：US20160204097A1

公开(公告)日：2016-07-14

申请号：US14971677

申请日：2015-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler ,  Philip Christoph Brandt ,  Maria Cotorogea

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/861 ,  H01L29/423 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L27/0266 ,  H01L27/0255 ,  H01L27/0262 ,  H01L29/0684 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/1033 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/8613 ,  H03K17/0828

Abstract: A semiconductor device includes a semiconductor region having charge carriers of a first conductivity type, a transistor cell in the semiconductor region, and a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type. A semiconductor auxiliary region in the semiconductor region has a second doping concentration of charge carriers of the second conductivity type, which is at least 30% higher than the first doping concentration. A pn-junction between the semiconductor auxiliary region and the semiconductor region is positioned as deep or deeper in the semiconductor region as a pn-junction between the semiconductor channel region and the semiconductor region. The semiconductor auxiliary region is positioned closer to the semiconductor channel region than any other semiconductor region having charge carriers of the second conductivity type and that forms a further pn-junction with the semiconductor region.

Abstract translation: 半导体器件包括具有第一导电类型的电荷载流子的半导体区域，半导体区域中的晶体管单元和晶体管单元中的半导体沟道区域，并且具有第二导电类型的电荷载流子的第一掺杂浓度。 半导体区域中的半导体辅助区域具有第二导电类型的电荷载流子的第二掺杂浓度，其比第一掺杂浓度高至少30％。 半导体辅助区域和半导体区域之间的pn结位于作为半导体沟道区域和半导体区域之间的pn结的半导体区域中的深度或深度。 半导体辅助区域比具有第二导电类型的电荷载流子的任何其它半导体区域更靠近半导体沟道区并且与半导体区域形成另外的pn结。

公开(公告)号：US11888032B2

公开(公告)日：2024-01-30

申请号：US18073860

申请日：2022-12-02

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7813

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

公开(公告)号：US11563322B2

公开(公告)日：2023-01-24

申请号：US17019746

申请日：2020-09-14

Applicant: Infineon Technologies AG

Inventor： Dethard Peters ,  Thomas Basler ,  Paul Sochor

IPC: H02H3/20 ,  H02H9/04 ,  H01L27/06 ,  H01L49/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/78 ,  H01L29/808 ,  H01L29/92

Abstract: An apparatus includes a unipolar power transistor and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate. The capacitor has a p-n junction. The RC snubber has a resistor between a source of the unipolar power transistor and a first layer forming the capacitor. The unipolar transistor and the RC snubber are coupled in parallel. The RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.