公开(公告)号：US11588048B2

公开(公告)日：2023-02-21

申请号：US17186281

申请日：2021-02-26

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Guenter Eckel ,  Jan Fuhrmann ,  Dethard Peters ,  Florian Stoermer

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/40 ,  H01L29/47

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.