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公开(公告)号：CN102468264A
公开(公告)日：2012-05-23
申请号：CN201110374827.5
申请日：2011-11-16
Applicant: 三星电子株式会社
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L24/81 , H01L23/3128 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/11001 , H01L2224/13025 , H01L2224/13075 , H01L2224/13099 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
Abstract: 本发明提供了一种包括第一凸起和第二凸起的凸起结构、一种包括该凸起结构的半导体封装件和一种制造该半导体封装件的方法。所述凸起结构包括：第一凸起，设置在基底的连接焊盘上，所述第一凸起包括从所述连接焊盘延伸的多条纳米线和连接所述多条纳米线的端部的主体；第二凸起，设置在所述第一凸起的所述主体上。
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公开(公告)号：CN102187458B
公开(公告)日：2016-04-20
申请号：CN200980141580.3
申请日：2009-08-19
Applicant: 美光科技公司
IPC: H01L25/065
CPC classification number: H01L23/5384 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L2224/03444 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05011 , H01L2224/05012 , H01L2224/05017 , H01L2224/05025 , H01L2224/05027 , H01L2224/05144 , H01L2224/05147 , H01L2224/05551 , H01L2224/05558 , H01L2224/05562 , H01L2224/05611 , H01L2224/114 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1161 , H01L2224/1162 , H01L2224/1182 , H01L2224/11823 , H01L2224/11825 , H01L2224/11826 , H01L2224/11831 , H01L2224/11903 , H01L2224/13017 , H01L2224/13018 , H01L2224/13019 , H01L2224/13075 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13562 , H01L2224/13611 , H01L2224/13644 , H01L2224/13687 , H01L2224/16145 , H01L2224/16146 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/29011 , H01L2224/2919 , H01L2224/48091 , H01L2224/48227 , H01L2224/73103 , H01L2224/73203 , H01L2224/73257 , H01L2224/81139 , H01L2224/81191 , H01L2224/81205 , H01L2224/81345 , H01L2224/81365 , H01L2224/81815 , H01L2224/81898 , H01L2224/831 , H01L2224/83141 , H01L2224/83193 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06555 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/11 , H01L2224/03 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 本发明揭示包含用于穿硅通孔的穿透结构的堆叠式裸片互连结构以及相关联的系统及方法。根据特定实施例，一种系统包含具有第一衬底材料的第一半导体衬底及由所述第一半导体衬底承载的穿透结构。所述系统进一步包含具有带有预形成的凹部的第二衬底材料的第二半导体衬底。所述第一半导体衬底的所述穿透结构接纳于所述第二半导体衬底的所述凹部中且与所述凹部机械啮合并紧固到所述第二半导体衬底。
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Patent Agency Ranking
公开(公告)号：CN102468264B
公开(公告)日：2016-08-03
申请号：CN201110374827.5
申请日：2011-11-16
Applicant: 三星电子株式会社
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L24/81 , H01L23/3128 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/11001 , H01L2224/13025 , H01L2224/13075 , H01L2224/13099 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
Abstract: 本发明提供了一种包括第一凸起和第二凸起的凸起结构、一种包括该凸起结构的半导体封装件和一种制造该半导体封装件的方法。所述凸起结构包括：第一凸起，设置在基底的连接焊盘上，所述第一凸起包括从所述连接焊盘延伸的多条纳米线和连接所述多条纳米线的端部的主体；第二凸起，设置在所述第一凸起的所述主体上。
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公开(公告)号：CN102187458A
公开(公告)日：2011-09-14
申请号：CN200980141580.3
申请日：2009-08-19
Applicant: 美光科技公司
IPC: H01L25/065
CPC classification number: H01L23/5384 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L2224/03444 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05011 , H01L2224/05012 , H01L2224/05017 , H01L2224/05025 , H01L2224/05027 , H01L2224/05144 , H01L2224/05147 , H01L2224/05551 , H01L2224/05558 , H01L2224/05562 , H01L2224/05611 , H01L2224/114 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1161 , H01L2224/1162 , H01L2224/1182 , H01L2224/11823 , H01L2224/11825 , H01L2224/11826 , H01L2224/11831 , H01L2224/11903 , H01L2224/13017 , H01L2224/13018 , H01L2224/13019 , H01L2224/13075 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13562 , H01L2224/13611 , H01L2224/13644 , H01L2224/13687 , H01L2224/16145 , H01L2224/16146 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/29011 , H01L2224/2919 , H01L2224/48091 , H01L2224/48227 , H01L2224/73103 , H01L2224/73203 , H01L2224/73257 , H01L2224/81139 , H01L2224/81191 , H01L2224/81205 , H01L2224/81345 , H01L2224/81365 , H01L2224/81815 , H01L2224/81898 , H01L2224/831 , H01L2224/83141 , H01L2224/83193 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06555 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/11 , H01L2224/03 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 本发明揭示包含用于穿硅通孔的穿透结构的堆叠式裸片互连结构以及相关联的系统及方法。根据特定实施例，一种系统包含具有第一衬底材料的第一半导体衬底及由所述第一半导体衬底承载的穿透结构。所述系统进一步包含具有带有预形成的凹部的第二衬底材料的第二半导体衬底。所述第一半导体衬底的所述穿透结构接纳于所述第二半导体衬底的所述凹部中且与所述凹部机械啮合并紧固到所述第二半导体衬底。
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公开(公告)号：CN106887420A
公开(公告)日：2017-06-23
申请号：CN201610018506.4
申请日：2016-01-12
Applicant: 敦南科技股份有限公司
Inventor： 楼百尧
IPC: H01L23/488
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/034 , H01L2224/03612 , H01L2224/03614 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11826 , H01L2224/11827 , H01L2224/119 , H01L2224/13026 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13562 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16145 , H01L2224/16227 , H01L2224/16245 , H01L2224/16503 , H01L2224/73204 , H01L2224/81191 , H01L2224/81203 , H01L2224/81395 , H01L2224/81447 , H01L2224/8181 , H01L2224/81948 , H01L2224/94 , H01L2224/97 , H01L2924/00015 , H01L2924/15311 , H01L2924/381 , H01L2924/00014 , H01L2224/81 , H01L2224/81815 , H01L2224/81444 , H01L2924/00012 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2224/1182 , H01L2224/113 , H01L2224/114 , H01L2924/014 , H01L2924/01322 , H01L2224/12105 , H01L2224/13075
Abstract: 本发明公开一种凸块结构，包括一焊盘，以及一钝化层，覆盖该接垫的周缘，其中所述钝化层包含一开口，显露出所述焊盘的部分表面区域。一第一部位，位于所述焊盘上，所述第一部位包含一上表面及一侧壁。一第二部位，覆盖在所述第一部位的上表面及其全部的侧壁上。
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公开(公告)号：CN103443915B
公开(公告)日：2016-08-17
申请号：CN201180069392.1
申请日：2011-03-22
Applicant: 瑞萨电子株式会社
IPC: H01L23/12 , H01L21/60 , H01L21/822 , H01L27/04
CPC classification number: H01L24/17 , H01L21/563 , H01L23/291 , H01L23/3135 , H01L23/3142 , H01L23/3171 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/1134 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13075 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/14136 , H01L2224/14155 , H01L2224/14177 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/83102 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/3512 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
Abstract: 本发明提供一种能够提高半导体器件的可靠性的技术。在本发明中，作为搭载半导体芯片的布线基板，不使用层积式基板而使用贯通基板(THWB)。由此，在本发明中，通过使用仅由芯层构成的贯通基板，不再需要考虑层积层和芯层的热膨胀系数的不同，而且，因为不存在层积层，所以也不需要考虑形成于层积层的细小过孔的电切断。其结果为，根据本发明，能够实现成本降低，同时还能够实现半导体器件的可靠性提高。
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公开(公告)号：CN103443915A
公开(公告)日：2013-12-11
申请号：CN201180069392.1
申请日：2011-03-22
Applicant: 瑞萨电子株式会社
IPC: H01L23/12 , H01L21/60 , H01L21/822 , H01L27/04
CPC classification number: H01L24/17 , H01L21/563 , H01L23/291 , H01L23/3135 , H01L23/3142 , H01L23/3171 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/1134 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13075 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/14136 , H01L2224/14155 , H01L2224/14177 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/83102 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/3512 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
Abstract: 本发明提供一种能够提高半导体器件的可靠性的技术。在本发明中，作为搭载半导体芯片的布线基板，不使用层积式基板而使用贯通基板(THWB)。由此，在本发明中，通过使用仅由芯层构成的贯通基板，不再需要考虑层积层和芯层的热膨胀系数的不同，而且，因为不存在层积层，所以也不需要考虑形成于层积层的细小过孔的电切断。其结果为，根据本发明，能够实现成本降低，同时还能够实现半导体器件的可靠性提高。
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