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    SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER EPITAXIAL SILICON AT LOW SUBSTRATE TEMPERATURE
    2.
    发明公开
    SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER EPITAXIAL SILICON AT LOW SUBSTRATE TEMPERATURE 审中-公开

    公开(公告)号：US20240363374A1

    公开(公告)日：2024-10-31

    申请号：US18632376

    申请日：2024-04-11

    申请人： Applied Materials, Inc.

    发明人： Mukhles SOWWAN ,  Shu-Kwan LAU

    IPC分类号： H01L21/67 ,  C01B33/02 ,  C30B29/06 ,  C30B33/12 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  C01B33/02 ,  C30B29/06 ,  C30B33/12 ,  H01L21/3065

    摘要： Disclosed herein are a processing chamber, a radical generation cartridge, and a method for etching amorphous silicon selectively relative to crystalline silicon. In one example, the selective silicon etching process is performed in an epitaxy processing chamber. In an example, a processing chamber is provided that includes a chamber body, a transparent dome, a susceptor, a heat source, and a first hot wire filament. The transparent dome is disposed on the chamber body and with the body, partially enclosing a processing volume. The susceptor is disposed in the processing volume. The heat source is positioned to direct radiant energy through the transparent dome toward the susceptor. The first hot wire filament is disposed in a first gas inlet formed through the chamber body. The first hot wire filament is configured to generate radicals from gas flowing through the first gas inlet into the processing volume of the processing chamber.

    Method, Apparatus, Equipment for Accurately Adjusting ADC Camera and Computer Storage Medium
    4.
    发明公开
    Method, Apparatus, Equipment for Accurately Adjusting ADC Camera and Computer Storage Medium 审中-公开

    公开(公告)号：US20240352615A1

    公开(公告)日：2024-10-24

    申请号：US18569189

    申请日：2022-09-22

    申请人： XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD.

    发明人： Shaojie SONG ,  Zhenliang SONG

    IPC分类号： C30B15/26 ,  C30B29/06

    CPC分类号： C30B15/26 ,  C30B29/06

    摘要： A method for accurately adjusting an automatic diameter control (ADC) camera includes before pulling a monocrystalline silicon ingot, obtaining a height variation value of an ADC camera from a solid-liquid interface of a melt by separately comparing variations of thermal field accessories provided corresponding to the monocrystalline silicon ingot and a previous monocrystalline silicon ingot. Based on a geometric relationship between the height variation value and a horizontal displacement of the ADC camera, a horizontal displacement of the ADC camera is obtained according to the height variation value, wherein the horizontal displacement is a first horizontal displacement or a second horizontal displacement. The method also includes moving the ADC camera horizontally to a target position according to the horizontal displacement of the ADC camera.

    Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production Method
    5.
    发明公开
    Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production Method 审中-公开

    公开(公告)号：US20240352614A1

    公开(公告)日：2024-10-24

    申请号：US18294647

    申请日：2022-06-14

    申请人： Crystal Systems Corporation

    发明人： Isamu Shindo

    IPC分类号： C30B15/16 ,  C30B15/04 ,  C30B15/22 ,  C30B15/30 ,  C30B29/64

    CPC分类号： C30B15/16 ,  C30B15/04 ,  C30B15/22 ,  C30B15/30 ,  C30B29/64

    摘要： To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method capable of applying a large raw material lump while suppressing an increase in output of an infrared ray, and capable of continuously producing a thin plate-shaped single crystal in which a dopant concentration is an optimum composition and uniform at low cost with high accuracy. Included are an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for producing a thin plate-shaped single crystal with an infrared ray to melt a surface of the upper surface of the raw material lump; an elevator apparatus that immerses a lower surface of a thin plate-shaped seed single crystal in a melt melted by the infrared ray irradiation apparatus and obtained on the surface of the upper surface of the raw material lump, and lifts the seed single crystal upward from the immersed state; and a horizontal direction moving apparatus that moves the raw material lump in a horizontal direction. By immersing the lower surface of the seed single crystal in the melt obtained on the surface of the upper surface of the raw material lump by the infrared ray irradiation apparatus via the elevator apparatus, growth of a single crystal is started from the lower surface of the immersed seed single crystal. Furthermore, configured such that, by moving the raw material lump in the horizontal direction by the horizontal direction moving apparatus simultaneously with lifting the seed single crystal upward via the elevator apparatus, a thin plate-shaped single crystal is continuously produced while a molten region of the upper surface of the raw material lump is moved in the horizontal direction.

    Silicon carbide epitaxial substrate and silicon carbide semiconductor device
    6.
    发明授权
    Silicon carbide epitaxial substrate and silicon carbide semiconductor device 有权

    公开(公告)号：US12125881B2

    公开(公告)日：2024-10-22

    申请号：US17274859

    申请日：2019-08-08

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Tsutomu Hori ,  Hiromu Shiomi ,  Takaya Miyase

    IPC分类号： H01L31/0312 ,  C30B25/20 ,  C30B29/36 ,  H01L29/16

    CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36

    摘要： A silicon carbide epitaxial layer includes a first silicon carbide layer, a second silicon carbide layer, a third silicon carbide layer, and a fourth silicon carbide layer. A nitrogen concentration of the second silicon carbide layer is increased from the first silicon carbide layer toward the third silicon carbide layer. A value obtained by dividing, by a thickness of the second silicon carbide layer, a value obtained by subtracting a nitrogen concentration of the first silicon carbide layer from a nitrogen concentration of the third silicon carbide layer is less than or equal to 6×1023 cm−4. Assuming that the nitrogen concentration of the third silicon carbide layer is N cm−3 and a thickness of the third silicon carbide layer is X μm, X and N satisfy a Formula 1.

    AUTOMATED CONTROL OF SINGLE-CRYSTAL FIBER GROWTH PROCESS
    7.
    发明公开
    AUTOMATED CONTROL OF SINGLE-CRYSTAL FIBER GROWTH PROCESS 审中-公开

    公开(公告)号：US20240344234A1

    公开(公告)日：2024-10-17

    申请号：US18603351

    申请日：2024-03-13

    申请人： Alcon Inc.

    发明人： Kevin Canzone ,  Gisele Maxwell ,  Andrei Deev

    IPC分类号： C30B15/26 ,  C30B15/06 ,  C30B15/16

    CPC分类号： C30B15/26 ,  C30B15/06 ,  C30B15/16

    摘要： A method for growing a straight/non-tapered or a tapered high-transmission single-crystal fiber (SCF) using a fiber growth machine includes receiving, via an electronic control unit (ECU), a set of image data from a camera. The image data includes a first group of pixels of a feed fiber, a seed fiber, and a molten zone formed therebetween using a laser beam. The method includes identifying a feature of interest of the feed fiber, seed fiber, and/or molten zone within the first pixel group and locating position-identifying pixels within the feature of interest as a second pixel group. A horizontal position of the feed fiber is controlled via the ECU using the second pixel group while growing the fiber, including transmitting electronic control signals to actuators of the machine. An automated system for growing the SCF includes the camera configured and the ECU configured to perform the method.