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    Charge-sharing compute-in-memory system
    1.
    发明授权
    Charge-sharing compute-in-memory system 有权

    公开(公告)号：US11494629B2

    公开(公告)日：2022-11-08

    申请号：US16669855

    申请日：2019-10-31

    申请人： QUALCOMM Incorporated

    发明人： Zhongze Wang ,  Xia Li ,  Xiaochun Zhu

    IPC分类号： G11C16/08 ,  G06N3/063 ,  G11C11/419 ,  G11C11/412 ,  G11C11/21

    摘要： Certain aspects provide a circuit for in-memory computation. The circuit generally includes a first memory cell, and a first computation circuit. The first computation circuit may include a first switch having a control input coupled to an output of the first memory cell, a second switch coupled between a node of the first computation circuit and the first switch, a control input of the second switch being coupled to a discharge word-line (DCWL), a capacitive element coupled between the node and a reference potential node, a third switch coupled between the node and a read bit-line (RBL), and a fourth switch coupled between the node and an activation (ACT) line.

    Memory cell and an array of memory cells
    2.
    发明授权
    Memory cell and an array of memory cells 有权

    公开(公告)号：US11037942B2

    公开(公告)日：2021-06-15

    申请号：US16743088

    申请日：2020-01-15

    申请人： Micron Technology, Inc.

    发明人： Durai Vishak Nirmal Ramaswamy ,  Wayne Kinney ,  Marco Domenico Tiburzi

    IPC分类号： H01L27/115 ,  H01L27/11507 ,  H01L49/02 ,  H01L27/11514 ,  G11C11/21 ,  G11C11/24

    摘要： A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.