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公开(公告)号：US10541015B2
公开(公告)日：2020-01-21
申请号：US16184688
申请日：2018-11-08
摘要： A virtual ground sensing circuit includes a sense circuit configured to compare a reference voltage potential to a sense node voltage potential, and virtual ground circuitry operably coupled to the sense circuit. The virtual ground circuitry is configured to provide a virtual ground at a first bias voltage potential to a conductive line operably coupled to a selected ferroelectric memory cell, and discharge the conductive line to the sense node responsive to the selected ferroelectric memory cell changing from a first polarization state to a second polarization state. A method includes applying a second bias voltage potential to another conductive line operably coupled to the selected ferroelectric memory cell, and comparing a sense node voltage potential to a reference voltage potential. Electrical systems and computing devices include virtual ground sensing circuits.
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2.发明申请公开(公告)号：US20190096464A1
公开(公告)日：2019-03-28
申请号：US16184688
申请日：2018-11-08
摘要： Virtual ground sensing circuits, electrical systems, computing devices, and related methods are disclosed. A virtual ground sensing circuit includes a sense circuit configured to compare a reference voltage potential to a sense node voltage potential, and virtual ground circuitry operably coupled to the sense circuit. The virtual ground circuitry is configured to provide a virtual ground at a first bias voltage potential to a conductive line operably coupled to a selected ferroelectric memory cell, and discharge the conductive line to the sense node responsive to the selected ferroelectric memory cell changing from a first polarization state to a second polarization state. A method includes applying a second bias voltage potential to another conductive line operably coupled to the selected ferroelectric memory cell, and comparing a sense node voltage potential to a reference voltage potential. Electrical systems and computing devices include virtual ground sensing circuits.
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3.发明申请公开(公告)号：US20170365319A1
公开(公告)日：2017-12-21
申请号：US15674019
申请日：2017-08-10
CPC分类号： G11C11/2273 , G11C7/062 , G11C7/067 , G11C11/221 , G11C11/2253 , G11C11/5657 , G11C2213/77
摘要： Virtual ground sensing circuits, electrical systems, computing devices, and related methods are disclosed. A virtual ground sensing circuit includes a sense circuit configured to compare a reference voltage potential to a sense node voltage potential, and virtual ground circuitry operably coupled to the sense circuit. The virtual ground circuitry is configured to provide a virtual ground at a first bias voltage potential to a conductive line operably coupled to a selected ferroelectric memory cell, and discharge the conductive line to the sense node responsive to the selected ferroelectric memory cell changing from a first polarization state to a second polarization state. A method includes applying a second bias voltage potential to another conductive line operably coupled to the selected ferroelectric memory cell, and comparing a sense node voltage potential to a reference voltage potential. Electrical systems and computing devices include virtual ground sensing circuits.
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公开(公告)号：US12086427B2
公开(公告)日：2024-09-10
申请号：US17677641
申请日：2022-02-22
发明人： Sriteja Yamparala , Fulvio Rori , Marco Domenico Tiburzi , Walter Di Francesco , Chiara Cerafogli , Tawalin Opastrakoon
CPC分类号： G06F3/0625 , G06F1/08 , G06F1/28 , G06F3/0653 , G06F3/0673
摘要： Various embodiments of the present disclosure relate to monitoring the integrity of power signals within memory systems. A method can include receiving a power signal at a memory component, and monitoring, via a power signal monitoring component of the memory component, an integrity characteristic of the power signal. Responsive to the integrity characteristic meeting a particular criteria, the method can include providing a status indication to a control component external to the memory component.
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公开(公告)号：US11094362B2
公开(公告)日：2021-08-17
申请号：US16504814
申请日：2019-07-08
摘要： Virtual ground sensing circuits, control circuit, electrical systems, computing devices, and related methods are disclosed. A control circuit includes a virtual ground sensing circuit configured to provide a virtual ground to a conductive line. The virtual ground sensing circuit is further configured to selectively operably couple the conductive line to a sense node of a sense circuit, wherein the sense node having a sense node capacitance less than a capacitance of the conductive line. Further, virtual ground sensing circuit is configured to compare a sense node voltage to a reference voltage.
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6.发明申请公开(公告)号：US20190371384A1
公开(公告)日：2019-12-05
申请号：US16540619
申请日：2019-08-14
摘要： Virtual ground sensing circuits, control circuit, electrical systems, computing devices, and related methods are disclosed. A control circuit includes a virtual ground sensing circuit configured to provide a virtual ground to a conductive line. The virtual ground sensing circuit is further configured to selectively operably couple the conductive line to a sense node of a sense circuit, wherein the sense node having a sense node capacitance less than a capacitance of the conductive line. Further, virtual ground sensing circuit is configured to compare a sense node voltage to a reference voltage.
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公开(公告)号：US09786346B2
公开(公告)日：2017-10-10
申请号：US14717471
申请日：2015-05-20
CPC分类号： G11C11/2273 , G11C11/221 , G11C11/2253 , G11C11/5657 , G11C2213/77
摘要： Virtual ground sensing circuits, electrical systems, computing devices, and related methods are disclosed. A virtual ground sensing circuit includes a sense circuit configured to compare a reference voltage potential to a sense node voltage potential, and virtual ground circuitry operably coupled to the sense circuit. The virtual ground circuitry is configured to provide a virtual ground at a first bias voltage potential to a conductive line operably coupled to a selected ferroelectric memory cell, and discharge the conductive line to the sense node responsive to the selected ferroelectric memory cell changing from a first polarization state to a second polarization state. A method includes applying a second bias voltage potential to another conductive line operably coupled to the selected ferroelectric memory cell, and comparing a sense node voltage potential to a reference voltage potential. Electrical systems and computing devices include virtual ground sensing circuits.
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公开(公告)号：US11561710B2
公开(公告)日：2023-01-24
申请号：US17140600
申请日：2021-01-04
IPC分类号： G06F3/06
摘要： The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.
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公开(公告)号：US20210124511A1
公开(公告)日：2021-04-29
申请号：US17140600
申请日：2021-01-04
IPC分类号： G06F3/06
摘要： The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.
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公开(公告)号：US20200152645A1
公开(公告)日：2020-05-14
申请号：US16743088
申请日：2020-01-15
IPC分类号： H01L27/11507 , H01L27/11514 , H01L49/02
摘要： A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.
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