-
公开(公告)号:US20170162538A1
公开(公告)日:2017-06-08
申请号:US15441741
申请日:2017-02-24
Applicant: EV GROUP E. THALLNER GMBH
Inventor: Markus WIMPLINGER
CPC classification number: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
-
2.SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC DEVICE 审中-公开
Title translation: 半导体装置,其制造方法和电气装置公开(公告)号:US20150171053A1
公开(公告)日:2015-06-18
申请号:US14453922
申请日:2014-08-07
Applicant: FUJITSU LIMITED
Inventor: Motoaki TANI , Keishiro OKAMOTO
IPC: H01L23/00 , H01L23/367 , H01L21/78
CPC classification number: H01L24/83 , H01L21/78 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/367 , H01L23/3737 , H01L23/49822 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06155 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/32225 , H01L2224/3224 , H01L2224/32245 , H01L2224/33183 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/49175 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/8384 , H01L2224/83851 , H01L2224/92247 , H01L2224/94 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/10161 , H01L2924/10253 , H01L2924/1026 , H01L2924/1033 , H01L2924/10344 , H01L2924/1047 , H01L2924/12032 , H01L2924/12042 , H01L2924/13064 , H01L2924/142 , H01L2924/15153 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/00
Abstract: A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.
Abstract translation: 半导体装置包括:半导体器件,包括第一电极; 包括第二电极和凹部的基板; 以及散热粘合剂材料,用于将所述半导体器件设置在所述凹部中,以将所述第一电极布置成靠近所述第二电极,其中所述第一电极耦合到所述第二电极,并且所述散热粘合剂材料覆盖底表面, 半导体器件的侧表面的至少一部分。
-
3.
公开(公告)号:US20150171045A1
公开(公告)日:2015-06-18
申请号:US14105414
申请日:2013-12-13
Applicant: Infineon Technologies AG
Inventor: Rudolf Berger , Guenther Ruhl , Wolfgang Lehnert , Roland Rupp
IPC: H01L23/00
CPC classification number: H01L24/33 , H01L21/02002 , H01L21/187 , H01L21/6835 , H01L24/83 , H01L2221/68327 , H01L2221/68381 , H01L2224/32225 , H01L2224/83055 , H01L2224/83099 , H01L2224/83851 , H01L2224/83855 , H01L2924/1026 , Y10T428/30
Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.
Abstract translation: 一种复合结构,包括载体晶片和通过陶瓷形成聚合物前体获得的接合材料结合到载体晶片上的至少一个半导体片。
-
4.Wireless device, and information processing apparatus and storage device including the wireless device 有权
Title translation: 无线装置,以及包括无线装置的信息处理装置和存储装置公开(公告)号:US08874048B2
公开(公告)日:2014-10-28
申请号:US13603790
申请日:2012-09-05
Applicant: Yukako Tsutsumi , Koh Hashimoto , Takayoshi Ito , Koji Akita , Keiju Yamada
Inventor: Yukako Tsutsumi , Koh Hashimoto , Takayoshi Ito , Koji Akita , Keiju Yamada
CPC classification number: H01L23/552 , H01L23/3128 , H01L23/66 , H01L24/16 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L2223/6677 , H01L2224/16145 , H01L2224/16225 , H01L2224/48227 , H01L2225/0651 , H01L2225/06517 , H01L2924/00014 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10329 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01Q9/00 , H01Q13/00 , H01Q23/00 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: According to one embodiment, a wireless device includes a board, a semiconductor chip, a radiation element, a sealing resin, a conductive layer, and a first conductive wall. The semiconductor chip is mounted on the board and includes a transmission/reception circuit. The radiation element is formed on the board. The sealing resin seals the semiconductor chip. The conductive layer covers at least a portion of a surface of the sealing resin. The first conductive wall is provided between the semiconductor chip and the radiation element and is connected to the conductive layer.
Abstract translation: 根据一个实施例,无线设备包括板,半导体芯片,辐射元件,密封树脂,导电层和第一导电壁。 半导体芯片安装在电路板上,并包括发送/接收电路。 辐射元件形成在板上。 密封树脂密封半导体芯片。 导电层覆盖密封树脂表面的至少一部分。 第一导电壁设置在半导体芯片和辐射元件之间并连接到导电层。
-
公开(公告)号:US09627349B2
公开(公告)日:2017-04-18
申请号:US14909157
申请日:2013-09-13
Applicant: EV GROUP E. THALLNER GMBH
Inventor: Markus Wimplinger
CPC classification number: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
-
6.SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC DEVICE 有权
Title translation: 半导体装置,其制造方法和电气装置公开(公告)号:US20120217660A1
公开(公告)日:2012-08-30
申请号:US13358840
申请日:2012-01-26
Applicant: Motoaki TANI , Keishiro Okamoto
Inventor: Motoaki TANI , Keishiro Okamoto
CPC classification number: H01L24/83 , H01L21/78 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/367 , H01L23/3737 , H01L23/49822 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06155 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/32225 , H01L2224/3224 , H01L2224/32245 , H01L2224/33183 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/49175 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/8384 , H01L2224/83851 , H01L2224/92247 , H01L2224/94 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/10161 , H01L2924/10253 , H01L2924/1026 , H01L2924/1033 , H01L2924/10344 , H01L2924/1047 , H01L2924/12032 , H01L2924/12042 , H01L2924/13064 , H01L2924/142 , H01L2924/15153 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/00
Abstract: A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.
Abstract translation: 半导体装置包括:半导体器件,包括第一电极; 包括第二电极和凹部的基板; 以及散热粘合剂材料,用于将所述半导体器件设置在所述凹部中,以将所述第一电极布置成靠近所述第二电极,其中所述第一电极耦合到所述第二电极,并且所述散热粘合剂材料覆盖底表面, 半导体器件的侧表面的至少一部分。
-
公开(公告)号:US20160190092A1
公开(公告)日:2016-06-30
申请号:US14909157
申请日:2013-09-13
Applicant: EV GROUP E. THALLNER GMBH
Inventor: Markus WIMPLINGER
CPC classification number: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
Abstract translation: 一种通过以下方法将基底层和保护层构成的接合层施加于基板上的方法:将可氧化碱性材料作为基底层施加到基板的粘接侧,至少部分覆盖 具有至少部分可溶解在作为保护层的基础材料中的保护材料的基础层。 此外,本发明涉及相应的基板。
-
8.Compound structure and method for forming a compound structure 有权
Title translation: 用于形成复合结构的复合结构和方法公开(公告)号:US09219049B2
公开(公告)日:2015-12-22
申请号:US14105414
申请日:2013-12-13
Applicant: Infineon Technologies AG
Inventor: Rudolf Berger , Guenther Ruhl , Wolfgang Lehnert , Roland Rupp
CPC classification number: H01L24/33 , H01L21/02002 , H01L21/187 , H01L21/6835 , H01L24/83 , H01L2221/68327 , H01L2221/68381 , H01L2224/32225 , H01L2224/83055 , H01L2224/83099 , H01L2224/83851 , H01L2224/83855 , H01L2924/1026 , Y10T428/30
Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.
Abstract translation: 一种复合结构,包括载体晶片和通过陶瓷形成聚合物前体获得的接合材料结合到载体晶片上的至少一个半导体片。
-
公开(公告)号:US20180145048A1
公开(公告)日:2018-05-24
申请号:US15875335
申请日:2018-01-19
Applicant: EV GROUP E. THALLNER GMBH
Inventor: Markus WIMPLINGER
CPC classification number: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
-
公开(公告)号:US09911713B2
公开(公告)日:2018-03-06
申请号:US15441741
申请日:2017-02-24
Applicant: EV GROUP E. THALLNER GMBH
Inventor: Markus Wimplinger
CPC classification number: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
-
-
-
-
-
-
-
-
-