公开(公告)号：US20130217186A1

公开(公告)日：2013-08-22

申请号：US13747883

申请日：2013-01-23

Applicant: FUJITSU LIMITED

Inventor： Motoaki TANI ,  Yoshikatsu ISHIZUKI ,  Shinya SASAKI

IPC: H01L21/78 ,  H01L21/56

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2224/19 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device, includes: providing an adhesive layer on a support body; providing a semiconductor element on the adhesive layer; providing a resin layer on the adhesive layer, the semiconductor element being provided on the adhesive layer, and forming a substrate on the adhesive layer, the substrate including the semiconductor element and the resin layer; and removing the substrate from the adhesive layer, wherein an adhesive force of the adhesive layer in a direction in which the substrate is removed is less than an adhesive force of the adhesive layer in a planar direction in which the substrate is formed.

Abstract translation: 一种制造半导体器件的方法，包括：在支撑体上提供粘合剂层; 在所述粘合剂层上提供半导体元件; 在所述粘合剂层上设置树脂层，所述半导体元件设置在所述粘合剂层上，并且在所述粘合剂层上形成基板，所述基板包括所述半导体元件和所述树脂层; 并且从所述粘合剂层去除所述基板，其中所述粘合剂层沿所述基板被去除的方向的粘合力小于所述粘合剂层在形成所述基板的平面方向上的粘合力。

公开(公告)号：US20150171053A1

公开(公告)日：2015-06-18

申请号：US14453922

申请日：2014-08-07

Applicant: FUJITSU LIMITED

Inventor： Motoaki TANI ,  Keishiro OKAMOTO

IPC: H01L23/00 ,  H01L23/367 ,  H01L21/78

CPC classification number: H01L24/83 ,  H01L21/78 ,  H01L23/13 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3737 ,  H01L23/49822 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/06155 ,  H01L2224/06181 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/33183 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1026 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/1047 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/142 ,  H01L2924/15153 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00

Abstract: A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

Abstract translation: 半导体装置包括：半导体器件，包括第一电极; 包括第二电极和凹部的基板; 以及散热粘合剂材料，用于将所述半导体器件设置在所述凹部中，以将所述第一电极布置成靠近所述第二电极，其中所述第一电极耦合到所述第二电极，并且所述散热粘合剂材料覆盖底表面， 半导体器件的侧表面的至少一部分。

公开(公告)号：US20130187271A1

公开(公告)日：2013-07-25

申请号：US13786991

申请日：2013-03-06

Applicant: FUJITSU LIMITED ,  FUJITSU TEN LIMITED

Inventor： Motoaki TANI ,  Shinya IIJIMA ,  Shinichi SUGIURA ,  Hiromichi WATANABE

IPC: H01L23/498

CPC classification number: H01L23/49811 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/09103 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/83104 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/80203 ,  H01L2224/11 ,  H01L21/78 ,  H01L2224/81 ,  H01L2924/01047 ,  H01L2224/05552

Abstract: A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.

Abstract translation: 半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距半导体元件的背面远离第一距离处的第一凸起形成面和位于半导体元件的上方的第二凸起 并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸起的直径。

公开(公告)号：US20130217189A1

公开(公告)日：2013-08-22

申请号：US13749159

申请日：2013-01-24

Applicant: FUJITSU LIMITED

Inventor： Shinya SASAKI ,  Yoshikatsu ISHIZUKI ,  Motoaki TANI

IPC: H01L21/58

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2221/68318 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19105 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device, includes: providing a first adhesive layer on a support member; providing a film on the first adhesive layer; arranging a semiconductor element on the film; providing a resin layer on the film on which the semiconductor element is arranged, and forming a substrate including the semiconductor element and the resin layer on the film; and separating the film and the substrate from the first adhesive layer.

Abstract translation: 一种制造半导体器件的方法，包括：在支撑构件上提供第一粘合剂层; 在第一粘合剂层上提供薄膜; 在所述膜上布置半导体元件; 在其上布置半导体元件的膜上提供树脂层，并在膜上形成包括半导体元件和树脂层的基板; 以及从第一粘合剂层分离膜和基底。

公开(公告)号：US20130217184A1

公开(公告)日：2013-08-22

申请号：US13749126

申请日：2013-01-24

Applicant: FUJITSU LIMITED

Inventor： Yoshikatsu ISHIZUKI ,  Shinya SASAKI ,  Motoaki TANI

IPC: H01L21/56

CPC classification number: H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24195 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole.

Abstract translation: 一种制造半导体器件的方法，包括：将半导体元件放置在放置在具有第一通孔的支撑体上的粘合剂层上; 将部分放置在包括对应于第一通孔的部分的区域中，该部分位于支撑体上的粘合剂层上; 通过在其上放置有半导体元件和部件的粘合剂层上形成树脂层，形成衬底，所述衬底包括半导体元件，部分和树脂层; 以及通过将所述部件按压穿过所述第一通孔而从所述粘合剂层分离所述基板。