DEVICE AND METHOD FOR MEASURING A SUBSTRATE

    公开(公告)号:US20220390356A1

    公开(公告)日:2022-12-08

    申请号:US17774612

    申请日:2019-11-28

    IPC分类号: G01N21/21 G01N21/95 G06F30/20

    摘要: The invention relates to a method for measuring a multilayered substrate (1, 1′, 1″), particularly with at least one structure (7, 7′, 7″, 7′″, 7IV, 7V) with critical dimensions, particularly with a surface structure (7, 7′, 7″, 7′″, 7IV, 7V) with critical dimensions, characterized in that the method has at least the following steps, particularly the following procedure:
    producing (110) the substrate (1, 1′, 1″) with a plurality of layers (2, 3, 4, 5, 6, 6′, 6″), particularly with a structure (7, 7′, 7″, 7′″, 7IV, 7V), particularly with a structure (7, 7′, 7″, 7″′, 7IV, 7V) on a surface (6o, 6′o, 6″o) of an uppermost layer (6, 6′, 6″), wherein the dimensions of the layers and in particular the structures are known,
    measuring (120) the substrate (1, 1′, 1″), and in particular the structure (7, 7′, 7″, 7′″, 71IV, 7V)) using at least one measuring technology,
    creating (130) a simulation of the substrate using the measurement results from the measurement of the substrate (1, 1′, 1″),
    comparing (140) the measurement results with simulation results from the simulation of the substrate (1, 1′, 1″),
    optimizing the simulation (130) and renewed creation (130) of a simulation of the substrate using the measurement results from the measurement of the substrate (1, 1′, 1″), in the event that there is a deviation of the measurement results from the simulation results, or calculating (150) parameters of further substrates, in the event that the measurement results correspond to the simulation results.

    APPARATUS AND METHOD FOR BONDING SUBSTRATES
    3.
    发明申请
    APPARATUS AND METHOD FOR BONDING SUBSTRATES 有权
    用于粘接基板的装置和方法

    公开(公告)号:US20160225625A1

    公开(公告)日:2016-08-04

    申请号:US15021725

    申请日:2013-09-25

    IPC分类号: H01L21/18 H01L21/263

    摘要: A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

    摘要翻译: 一种用于在第一基板的接合侧和第二基板的接合侧之间产生导电直接接合的装置和方法,具有以下特征:可以关闭,气密地抵抗环境并且可以供应的工作空间 工作空间包括:a)至少一个等离子体室,用于修改至少一个接合侧面和至少一个用于粘合接合侧面的接合室,和/或b)至少一个组合接合/等离子体室,用于 修改粘合侧中的至少一个并且用于粘合粘合侧。

    APPARATUS AND METHOD FOR BONDING SUBSTRATES
    4.
    发明申请

    公开(公告)号:US20180130658A1

    公开(公告)日:2018-05-10

    申请号:US15862678

    申请日:2018-01-05

    IPC分类号: H01L21/18 H01L21/263

    摘要: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.