公开(公告)号：US08987911B2

公开(公告)日：2015-03-24

申请号：US14144587

申请日：2013-12-31

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/373 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L24/83 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/32 ,  H01L24/80 ,  H01L24/89 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/05124 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/08245 ,  H01L2224/09181 ,  H01L2224/27312 ,  H01L2224/2745 ,  H01L2224/29139 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/8084 ,  H01L2224/80895 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/05432 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/20107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/80

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

公开(公告)号：US20240021549A1

公开(公告)日：2024-01-18

申请号：US17866209

申请日：2022-07-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  National Yang Ming Chiao Tung University

Inventor： Chih CHEN ,  Hsiang-Hou TSENG

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L25/0657 ,  H01L25/0652 ,  H01L25/0655 ,  H01L21/486 ,  H01L23/49827 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/05639 ,  H01L2224/80203 ,  H01L2224/80092 ,  H01L2224/05147 ,  H01L2224/05083 ,  H01L2224/05573 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05026 ,  H01L2224/94 ,  H01L24/94 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/80439 ,  H01L2224/97 ,  H01L21/561

Abstract: A method includes forming a first connector and a second connector over a first wafer and a second wafer, respectively, in which each of the first and second connectors are formed by forming an opening in a dielectric layer; depositing a first metal layer in the opening, in which the first metal layer has a nano-twinned structure with (111) orientation; and depositing a second metal layer over the first metal layer, the second metal layer and the first metal layer being made of different materials, in which the second metal layer has a nano-twinned structure with (111) orientation; attaching the first wafer to the second wafer, such that that the second metal layer of the first connector on the first wafer is in contact with the second metal layer of the second connector on the second wafer; and performing a thermo-compression process to bond the first and second wafers.

公开(公告)号：US20230154877A1

公开(公告)日：2023-05-18

申请号：US17702812

申请日：2022-03-24

Applicant: Industrial Technology Research Institute

Inventor： Yu-Ming Peng ,  Chien-Chou Tseng ,  Chih-Chia Chang ,  Kuan-Chu Wu ,  Yu-Lin Hsu

IPC: H01L23/00 ,  H01L33/62 ,  H01L23/13 ,  H01L21/66

CPC classification number: H01L24/06 ,  H01L33/62 ,  H01L24/05 ,  H01L23/13 ,  H01L24/08 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L22/20 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05686 ,  H01L2924/0549 ,  H01L2224/0569 ,  H01L2224/05693 ,  H01L24/13 ,  H01L2224/13186 ,  H01L2224/1319 ,  H01L2224/13193 ,  H01L2224/0603 ,  H01L2224/08238 ,  H01L2224/16227 ,  H01L2224/80411 ,  H01L2224/80424 ,  H01L2224/80439 ,  H01L2224/80444 ,  H01L2224/80447 ,  H01L2224/80455 ,  H01L2224/80486 ,  H01L2224/8049 ,  H01L2224/80493 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L23/145

Abstract: An electronic device includes a substrate, an electronic component, a first interposing layer and a second interposing layer. The substrate is non-planar and the substrate includes a first substrate pad and a second substrate pad. The electronic component includes a first component pad and a second component pad corresponding to the first substrate pad and the second substrate pad respectively. When the first component pad contacts the first substrate pad, a height difference exists between the second component pad and the second substrate pad. The first interposing layer connects between the first component pad and the first substrate pad. The second interposing layer connects between the second component pad and the second substrate pad. A thickness difference between the first interposing layer and the second interposing layer is 0.5 to 1 time the height difference.

公开(公告)号：US09111782B2

公开(公告)日：2015-08-18

申请号：US14252740

申请日：2014-04-14

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L29/72 ,  H01L23/00 ,  B23K1/20 ,  B23K31/02 ,  H01L23/373 ,  H01L23/488 ,  H01L23/495 ,  H01L23/52 ,  H01L25/065 ,  H01L25/00 ,  B23K20/233

CPC classification number: H01L24/09 ,  B23K1/20 ,  B23K20/2333 ,  B23K31/02 ,  B23K2101/34 ,  B23K2103/10 ,  B23K2103/18 ,  B23K2103/56 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/52 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/80 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/031 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0589 ,  H01L2224/08225 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/2939 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/85181 ,  H01L2224/85424 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/9222 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/80 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

Abstract translation: 基于DBA的功率器件包括DBA（直接键合铝）基板。 将一定量的所需形状和尺寸的银纳米颗粒糊剂（例如通过微喷射沉积）沉积到DBA的金属板上。 然后将浆料烧结，从而形成与DBA的铝板电接触的烧结银特征。 DBA被焊接（例如，被超声波焊接）到引线框的引线。 将银沉积在晶片背面，并将晶片分成骰子。 在无焊银镀银贴片工艺中，模具的镀银背面被压到DBA顶面的烧结银特征上。 在适当的温度和压力下，模具的银熔化到DBA的烧结银上。 在引线接合，封装和引线修整之后，完成了基于DBA的功率器件。

公开(公告)号：US20150162304A1

公开(公告)日：2015-06-11

申请号：US14622869

申请日：2015-02-15

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L24/83 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/32 ,  H01L24/80 ,  H01L24/89 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/05124 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/08245 ,  H01L2224/09181 ,  H01L2224/27312 ,  H01L2224/2745 ,  H01L2224/29139 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/8084 ,  H01L2224/80895 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/05432 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/20107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/80

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract translation: 封装的功率器件不涉及软焊料，无引线接合。 两个直接结合金属的陶瓷基板组件（例如直接键合铝（DBA））基底的直接结合的金属层设置有烧结的银焊盘。 将银纳米颗粒糊剂施加到模具前侧的焊盘上，并且将该糊料烧结以形成银焊盘。 由蒸发过程形成的银覆盖了模具的背面。 模具被压在两个DBA之间，使得在管芯的前侧上的烧结银焊盘和一个DBA的相应的烧结银焊盘之间形成直接的银 - 银键，并且使得直接的银 - 银 在模具的背面银和另一个DBA的烧结银焊盘之间形成结合。 在铅成型，引线和封装之后，成品设备在外部封装表面上露出两个DBA的陶瓷。

公开(公告)号：US08653667B1

公开(公告)日：2014-02-18

申请号：US14061610

申请日：2013-10-23

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/48 ,  H01L23/3735 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L24/73 ,  H01L24/80 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L24/95 ,  H01L2224/03312 ,  H01L2224/0345 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05076 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05687 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0589 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/08238 ,  H01L2224/4007 ,  H01L2224/40225 ,  H01L2224/40247 ,  H01L2224/40475 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/4911 ,  H01L2224/73221 ,  H01L2224/73251 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/80439 ,  H01L2224/80895 ,  H01L2224/84205 ,  H01L2224/84424 ,  H01L2224/84801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/92 ,  H01L2224/92157 ,  H01L2224/9222 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/05432 ,  H01L2224/05139 ,  H01L2924/00015 ,  H01L2224/80 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2224/08 ,  H01L2224/40 ,  H01L2224/48 ,  H01L2224/03 ,  H01L2924/207 ,  H01L2224/37099

Abstract: A packaged power field effect transistor device includes a power field effect transistor die, a DBA substrate, a clip, a wire bond, leads, and an amount of plastic encapsulant. The top of the DBA has a plurality of metal plate islands. A sintered silver feature is disposed on one of the islands. A silvered backside of the die is directly bonded to the sintered silver structure of the DBA. The upper surface of the die includes a first aluminum pad (a source pad) and a second aluminum pad (a gate pad). A sintered silver structure is disposed on the first aluminum pad, but there is no sintered silver structure disposed on the second aluminum pad. A high current clip is attached via soft solder to the sintered silver structure on the first aluminum pad (the source pad). A bond wire is ultrasonically welded to the second aluminum pad (gate pad).

Abstract translation: 封装的功率场效应晶体管器件包括功率场效应晶体管管芯，DBA衬底，夹子，引线接合，引线和一定量的塑料密封剂。 DBA的顶部具有多个金属板岛。 烧结的银特征被布置在其中一个岛上。 模具的镀银背面直接结合到DBA的烧结银结构上。 管芯的上表面包括第一铝焊盘（源焊盘）和第二铝焊盘（栅极焊盘）。 烧结的银结构设置在第一铝焊盘上，但是没有烧结的银结构设置在第二铝焊盘上。 通过软焊料将大电流夹附接到第一铝焊盘（源极焊盘）上的烧结银结构。 接合线被超声波焊接到第二铝焊盘（栅极焊盘）。

公开(公告)号：US09082879B2

公开(公告)日：2015-07-14

申请号：US14622869

申请日：2015-02-15

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/373

CPC classification number: H01L24/83 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/32 ,  H01L24/80 ,  H01L24/89 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/05124 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/08245 ,  H01L2224/09181 ,  H01L2224/27312 ,  H01L2224/2745 ,  H01L2224/29139 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/8084 ,  H01L2224/80895 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/05432 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/20107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/80

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract translation: 封装的功率器件不涉及软焊料，无引线接合。 两个直接结合金属的陶瓷基板组件（例如直接键合铝（DBA））基底的直接结合的金属层设置有烧结的银焊盘。 将银纳米颗粒糊剂施加到模具前侧的焊盘上，并且将该糊料烧结以形成银焊盘。 由蒸发过程形成的银覆盖了模具的背面。 模具被压在两个DBA之间，使得在管芯的前侧上的烧结银焊盘和一个DBA的相应的烧结银焊盘之间形成直接的银 - 银键，并且使得直接的银 - 银 在模具的背面银和另一个DBA的烧结银焊盘之间形成结合。 在铅成型，引线和封装之后，成品设备在外部封装表面上露出两个DBA的陶瓷。

公开(公告)号：US20140225267A1

公开(公告)日：2014-08-14

申请号：US14252740

申请日：2014-04-14

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L23/00

CPC classification number: H01L24/09 ,  B23K1/20 ,  B23K20/2333 ,  B23K31/02 ,  B23K2101/34 ,  B23K2103/10 ,  B23K2103/18 ,  B23K2103/56 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/52 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/80 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/031 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0589 ,  H01L2224/08225 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/2939 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/85181 ,  H01L2224/85424 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/9222 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/80 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

Abstract translation: 基于DBA的功率器件包括DBA（直接键合铝）基板。 将一定量的所需形状和尺寸的银纳米颗粒糊剂（例如通过微喷射沉积）沉积到DBA的金属板上。 然后将浆料烧结，从而形成与DBA的铝板电接触的烧结银特征。 DBA被焊接（例如，被超声波焊接）到引线框的引线。 将银沉积在晶片背面，并将晶片分成骰子。 在无焊银镀银贴片工艺中，模具的镀银背面被压到DBA顶面的烧结银特征上。 在适当的温度和压力下，模具的银熔化到DBA的烧结银上。 在引线接合，封装和引线修整之后，完成了基于DBA的功率器件。

公开(公告)号：US20140183716A1

公开(公告)日：2014-07-03

申请号：US14144587

申请日：2013-12-31

Applicant: IXYS Corporation

Inventor： Nathan Zommer

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L24/83 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/32 ,  H01L24/80 ,  H01L24/89 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/05124 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/08245 ,  H01L2224/09181 ,  H01L2224/27312 ,  H01L2224/2745 ,  H01L2224/29139 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/8084 ,  H01L2224/80895 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/05432 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/20107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/80

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract translation: 封装的功率器件不涉及软焊料，无引线接合。 两个直接结合金属的陶瓷基板组件（例如直接键合铝（DBA））基底的直接结合的金属层设置有烧结的银焊盘。 将银纳米颗粒糊剂施加到模具前侧的焊盘上，并且将该糊料烧结以形成银焊盘。 由蒸发过程形成的银覆盖了模具的背面。 模具被压在两个DBA之间，使得在管芯的前侧上的烧结银焊盘和一个DBA的相应的烧结银焊盘之间形成直接的银 - 银键，并且使得直接的银 - 银 在模具的背面银和另一个DBA的烧结银焊盘之间形成结合。 在铅成型，引线和封装之后，成品设备在外部封装表面上露出两个DBA的陶瓷。

公开(公告)号：US08716864B2

公开(公告)日：2014-05-06

申请号：US13490459

申请日：2012-06-07

Applicant: Nathan Zommer

Inventor： Nathan Zommer

IPC: H01L29/72

CPC classification number: H01L24/09 ,  B23K1/20 ,  B23K20/2333 ,  B23K31/02 ,  B23K2101/34 ,  B23K2103/10 ,  B23K2103/18 ,  B23K2103/56 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/52 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/80 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/031 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0589 ,  H01L2224/08225 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/2939 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/80203 ,  H01L2224/80439 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/85181 ,  H01L2224/85424 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/9222 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/80 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

Abstract translation: 基于DBA的功率器件包括DBA（直接键合铝）基板。 将一定量的所需形状和尺寸的银纳米颗粒糊剂（例如通过微喷射沉积）沉积到DBA的金属板上。 然后将浆料烧结，从而形成与DBA的铝板电接触的烧结银特征。 DBA被焊接（例如，被超声波焊接）到引线框的引线。 将银沉积在晶片背面，并将晶片分成骰子。 在无焊银镀银贴片工艺中，模具的镀银背面被压到DBA顶面的烧结银特征上。 在适当的温度和压力下，模具的银熔化到DBA的烧结银上。 在引线接合，封装和引线修整之后，完成了基于DBA的功率器件。