公开(公告)号：US20180211959A1

公开(公告)日：2018-07-26

申请号：US15819309

申请日：2017-11-21

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Kwan Yu ,  Hyo Jin Kim ,  Dong Suk Shin ,  Ji Hye Yi ,  Ryong Ha

IPC分类号： H01L27/092

CPC分类号： H01L27/0924 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/4238 ,  H01L29/66484 ,  H01L29/66636

摘要： A semiconductor device includes a substrate, first through fourth gate electrodes, and first through fifth fin active pattern. A first recess which is formed in the substrate between the first and second gate electrodes intersecting the second fin active pattern, is filled with a first source/drain region, and has a first depth in a third direction perpendicular to the first and second directions. A second recess which is formed in the substrate between the third and fourth gate electrodes intersecting the second fin active pattern, is filled with a second source/drain region, and has a second depth in the third direction. A third recess which is formed in the substrate between the second and third gate electrodes intersecting the second fin active pattern, is filled with a third source/drain region, and has a third depth in the third direction. The third depth is greater than the first and second depths.

公开(公告)号：US10243045B2

公开(公告)日：2019-03-26

申请号：US15800483

申请日：2017-11-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun Kwan Yu ,  Hyo Jin Kim ,  Ryong Ha

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L21/762

摘要： A semiconductor device is provided. The semiconductor device includes a fin-type pattern formed on a substrate and including first and second sidewalls, which are defined by a trench, a field insulating film placed in contact with the first and second sidewalls and filling the trench, and an epitaxial pattern formed on the fin-type pattern and including a first epitaxial layer and a second epitaxial layer, which is formed on the first epitaxial layer.

公开(公告)号：US20180025901A1

公开(公告)日：2018-01-25

申请号：US15416408

申请日：2017-01-26

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC分类号： H01L21/02 ,  B08B7/04 ,  H01L29/66 ,  B08B7/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02057 ,  B08B7/0035 ,  B08B7/04 ,  H01J37/32091 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7848

摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US11239344B2

公开(公告)日：2022-02-01

申请号：US16686378

申请日：2019-11-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun Kwan Yu ,  Seung Hun Lee ,  Yang Xu

IPC分类号： H01L29/66 ,  H01L29/165 ,  H01L29/201 ,  H01L29/20

摘要： A method of manufacturing a semiconductor device, the method including: forming, in a first region of a substrate, an active fin and a sacrificial gate structure intersecting the active fin; forming a first spacer and a second spacer on the substrate to cover the sacrificial gate structure; forming a mask in a second region of the substrate to expose the first region of the substrate; removing the second spacer from the first spacer in the first region of the substrate by using the mask; forming recesses at opposite sides of the sacrificial gate structure by removing portions of the active fin; forming a source and a drain in the recesses; and forming an etch-stop layer to cover both sidewalls of the sacrificial gate structure and a top surfaces of the source and drain.

公开(公告)号：US10243056B2

公开(公告)日：2019-03-26

申请号：US15479459

申请日：2017-04-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun Kwan Yu ,  Kyung Ho Kim ,  Dong Suk Shin

IPC分类号： H01L29/49 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092

摘要： A semiconductor device includes a field insulating film including a first region and a second region on a substrate, a recess in the first region of the field insulating film, a gate electrode on the second region of the field insulating film, and a gate spacer along a sidewall of the gate electrode and a sidewall of the recess.

公开(公告)号：US11935943B2

公开(公告)日：2024-03-19

申请号：US17571694

申请日：2022-01-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun Kwan Yu ,  Seung Hun Lee ,  Yang Xu

IPC分类号： H01L29/66 ,  H01L29/165 ,  H01L29/20 ,  H01L29/201 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device, the method including: forming, in a first region of a substrate, an active fin and a sacrificial gate structure intersecting the active fin; forming a first spacer and a second spacer on the substrate to cover the sacrificial gate structure; forming a mask in a second region of the substrate to expose the first region of the substrate; removing the second spacer from the first spacer in the first region of the substrate by using the mask; forming recesses at opposite sides of the sacrificial gate structure by removing portions of the active fin; forming a source and a drain in the recesses; and forming an etch-stop layer to cover both sidewalls of the sacrificial gate structure and a top surfaces of the source and drain.

公开(公告)号：US10790133B2

公开(公告)日：2020-09-29

申请号：US15416408

申请日：2017-01-26

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC分类号： B08B7/00 ,  B08B7/04 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66 ,  H01J37/32 ,  H01L21/683 ,  H01L29/78 ,  H01L29/165

摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US10121791B2

公开(公告)日：2018-11-06

申请号：US15819309

申请日：2017-11-21

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Kwan Yu ,  Hyo Jin Kim ,  Dong Suk Shin ,  Ji Hye Yi ,  Ryong Ha

IPC分类号： H01L29/08 ,  H01L29/66 ,  H01L27/092 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

摘要： A semiconductor device includes a substrate, first through fourth gate electrodes, and first through fifth fin active pattern. A first recess which is formed in the substrate between the first and second gate electrodes intersecting the second fin active pattern, is filled with a first source/drain region, and has a first depth in a third direction perpendicular to the first and second directions. A second recess which is formed in the substrate between the third and fourth gate electrodes intersecting the second fin active pattern, is filled with a second source/drain region, and has a second depth in the third direction. A third recess which is formed in the substrate between the second and third gate electrodes intersecting the second fin active pattern, is filled with a third source/drain region, and has a third depth in the third direction. The third depth is greater than the first and second depths.