- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US15479459申请日： 2017-04-05
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公开(公告)号： US10243056B2公开(公告)日： 2019-03-26
- 发明人: Hyun Kwan Yu , Kyung Ho Kim , Dong Suk Shin
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse P.C.
- 优先权： KR10-2016-0067531 20160531
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L27/11 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L21/8238 ; H01L27/092
摘要：
A semiconductor device includes a field insulating film including a first region and a second region on a substrate, a recess in the first region of the field insulating film, a gate electrode on the second region of the field insulating film, and a gate spacer along a sidewall of the gate electrode and a sidewall of the recess.
公开/授权文献
- US20170345911A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2017-11-30
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